FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 392/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
2N7002AQ-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET NCH 60V 180MA SOT23	In Stock251 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V	Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V	FET Feature: -	Power Dissipation (Max): 370mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
DMN3731UFB4-7B	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 25V-30V X2-DFN1006	In Stock352 More on Order	Manufacturer: Diodes Incorporated	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
DMN67D8LW-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SOT323	In Stock424 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V	FET Feature: -	Power Dissipation (Max): 320mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-323	Package / Case: SC-70, SOT-323
DMN2450UFB4-7B	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 8V-24V X2-DFN1006-	In Stock392 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V	Vgs(th) (Max) @ Id: 900mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 16V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: X2-DFN1006-3	Package / Case: 3-XFDFN
DMG1012T-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 8V-24V SOT523 T&R	In Stock495 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.737nC @ 4.5V	Vgs (Max): ±6V	Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V	FET Feature: -	Power Dissipation (Max): 280mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-523	Package / Case: SOT-523
BSS84LT7G	ON Semiconductor	Transistors - FETs, MOSFETs - Single PFET SOT23 50V 130MA 10.0	In Stock461 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V	Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 5V	FET Feature: -	Power Dissipation (Max): 225mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3 (TO-236)	Package / Case: TO-236-3, SC-59, SOT-23-3
DMN65D9L-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 41V-60V SOT23	In Stock606 More on Order	Manufacturer: Diodes Incorporated	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
DMN65D9L-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 41V-60V SOT23	In Stock506 More on Order	Manufacturer: Diodes Incorporated	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
DMN31D6UT-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 350MA SOT523	In Stock235 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V	Vgs(th) (Max) @ Id: 1.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 13.6pF @ 15V	FET Feature: -	Power Dissipation (Max): 320mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-523	Package / Case: SOT-523
NX3008NBKVL	Nexperia	Transistors - FETs, MOSFETs - Single NX3008NBK/SOT23/TO-236AB	In Stock254 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V	Vgs(th) (Max) @ Id: 1.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V	FET Feature: -	Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-236AB	Package / Case: TO-236-3, SC-59, SOT-23-3
DMN61D9UW-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.34A SOT323	In Stock338 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V	Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V	FET Feature: -	Power Dissipation (Max): 320mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-323	Package / Case: SC-70, SOT-323
DMN62D0UW-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.34A SOT323	In Stock280 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V	FET Feature: -	Power Dissipation (Max): 320mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-323	Package / Case: SC-70, SOT-323
DMG2301L-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3A SOT23	In Stock535 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 476pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
BSS84AKVL	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 180MA TO236AB	In Stock218 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V	Vgs(th) (Max) @ Id: 2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V	FET Feature: -	Power Dissipation (Max): 350mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-236AB	Package / Case: TO-236-3, SC-59, SOT-23-3
NX3008PBKMB,315	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 300MA 3DFN	In Stock294 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V	Vgs(th) (Max) @ Id: 1.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V	FET Feature: -	Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DFN1006B-3	Package / Case: 3-XFDFN
DMN53D0U-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 0.3A SOT23	In Stock292 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V	Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 25V	FET Feature: -	Power Dissipation (Max): 520mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
DMN3731U-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 25V-30V SOT23	In Stock349 More on Order	Manufacturer: Diodes Incorporated	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
BSS138BKVL	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 360MA TO236AB	In Stock218 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V	Rds On (Max) @ Id, Vgs: 1.6Ohm @ 350mA, 10V	Vgs(th) (Max) @ Id: 1.6V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 10V	FET Feature: -	Power Dissipation (Max): 350mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-236AB	Package / Case: TO-236-3, SC-59, SOT-23-3
DMN2990UFB-7B	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 8V-24V X1-DFN1006-	In Stock358 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250A	Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V	FET Feature: -	Power Dissipation (Max): 520mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: X1-DFN1006-3	Package / Case: 3-UFDFN
DMN53D0L-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 0.5A SOT23	In Stock622 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V	Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V	FET Feature: -	Power Dissipation (Max): 370mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
DMN31D5L-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 25V-30V SOT23 T&R	In Stock541 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.6V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V	FET Feature: -	Power Dissipation (Max): 350mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
SN7002NH6433XTMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 200MA SOT23	In Stock437 More on Order	Manufacturer: Infineon Technologies	Series: SIPMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 1.8V @ 26µA	Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V	FET Feature: -	Power Dissipation (Max): 360mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3	Package / Case: TO-236-3, SC-59, SOT-23-3
SN7002WH6433XTMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 230MA SOT-323	In Stock410 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
DMN53D0LQ-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET NCH 50V 500MA SOT23	In Stock440 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V	Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V	FET Feature: -	Power Dissipation (Max): 370mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
DMG2302UK-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET NCH 20V 2.8A SOT23	In Stock404 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 90mOhm @ 3.6A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 10V	FET Feature: -	Power Dissipation (Max): 660mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
DMN63D1LW-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.38A SOT323	In Stock318 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V	FET Feature: -	Power Dissipation (Max): 310mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-323	Package / Case: SC-70, SOT-323
FJ3303010L	Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 100MA SSSMINI3	In Stock478 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V	Rds On (Max) @ Id, Vgs: 7Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.5V @ 1µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V	FET Feature: -	Power Dissipation (Max): 100mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SSSMini3-F2-B	Package / Case: SOT-723
PMV160UPVL	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.2A TO236AB	In Stock403 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 210mOhm @ 1.2A, 4.5V	Vgs(th) (Max) @ Id: 950mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V	FET Feature: -	Power Dissipation (Max): 335mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-236AB	Package / Case: TO-236-3, SC-59, SOT-23-3
DMP510DL-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 0.18A SOT23	In Stock196 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V	Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 24.6pF @ 25V	FET Feature: -	Power Dissipation (Max): 310mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3	Package / Case: TO-236-3, SC-59, SOT-23-3
MMBF170Q-13-F	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.5A	In Stock645 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V	FET Feature: -	Power Dissipation (Max): 300mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3