FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 393/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
DMN61D9U-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.38A SOT23	In Stock167 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V	Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V	FET Feature: -	Power Dissipation (Max): 370mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3	Package / Case: TO-236-3, SC-59, SOT-23-3
DMG1013UWQ-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET PCH 20V 820MA SOT323	In Stock564 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 820mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V	Vgs (Max): ±6V	Input Capacitance (Ciss) (Max) @ Vds: 59.76pF @ 16V	FET Feature: -	Power Dissipation (Max): 310mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-323	Package / Case: SC-70, SOT-323
DMP31D7LW-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 25V-30V SOT323	In Stock349 More on Order	Manufacturer: Diodes Incorporated	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
DMN2450UFB4-7R	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 8V-24V X2-DFN1006-	In Stock120 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V	Vgs(th) (Max) @ Id: 900mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 16V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: X2-DFN1006-3	Package / Case: 3-XFDFN
DMP3099LQ-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 25V-30V SOT23 T&R	In Stock384 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 563pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.08W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
AON1605	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.7A 3DFN	In Stock353 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V	Rds On (Max) @ Id, Vgs: 710mOhm @ 400mA, 4.5V	Vgs(th) (Max) @ Id: 1.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 750nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V	FET Feature: -	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 3-DFN (1.0 x 0.60)	Package / Case: 3-UFDFN
BSS138K-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single BSS FAMILY SOT23 T&R 3K	In Stock366 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 23.2pF @ 25V	FET Feature: -	Power Dissipation (Max): 380mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
DMN31D6UT-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 350MA SOT523	In Stock430 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V	Vgs(th) (Max) @ Id: 1.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 13.6pF @ 15V	FET Feature: -	Power Dissipation (Max): 320mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-523	Package / Case: SOT-523
BSS670S2LH6433XTMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 540MA SOT23	In Stock512 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
AON1606	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.7A 3DFN	In Stock511 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V	Rds On (Max) @ Id, Vgs: 275mOhm @ 400mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 850nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 62.5pF @ 10V	FET Feature: -	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 3-DFN (1.0 x 0.60)	Package / Case: 3-UFDFN
DMN2046U-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 3.4A SOT23	In Stock305 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 72mOhm @ 3.6A, 4.5V	Vgs(th) (Max) @ Id: 1.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 292pF @ 10V	FET Feature: -	Power Dissipation (Max): 760mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
DMN3730UFB4-7B	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 25V-30V X1-DFN1006	In Stock234 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V	Vgs(th) (Max) @ Id: 950mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 64.3pF @ 25V	FET Feature: -	Power Dissipation (Max): 470mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: X2-DFN1006-3	Package / Case: 3-XFDFN
DMP2120U-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 8V-24V SOT23 T&R 1	In Stock281 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 62mOhm @ 4.2A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 487pF @ 20V	FET Feature: -	Power Dissipation (Max): 800mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
DMN2991UFZ-7B	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 8V-24V X2-DFN0606-	In Stock501 More on Order	Manufacturer: Diodes Incorporated	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
DMN2058UW-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 8V-24V SOT323 T&R	In Stock453 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V	Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-323	Package / Case: SC-70, SOT-323
DMP31D7LDW-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 25V-30V SOT363	In Stock242 More on Order	Manufacturer: Diodes Incorporated	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
PMV450ENEAR	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V TO-236AB	In Stock518 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 380mOhm @ 900mA, 10V	Vgs(th) (Max) @ Id: 2.7V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 101pF @ 30V	FET Feature: -	Power Dissipation (Max): 323mW (Ta), 554mW (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-236AB	Package / Case: TO-236-3, SC-59, SOT-23-3
SSM3K16CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.1A CST3 S-MOS	In Stock524 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: π-MOSVI	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V	Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.1V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V	FET Feature: -	Power Dissipation (Max): 100mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: CST3	Package / Case: SC-101, SOT-883
2N7002-G	Comchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.25A SOT23	In Stock541 More on Order	Manufacturer: Comchip Technology	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V	FET Feature: -	Power Dissipation (Max): 350mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
DMP213DUFA-7B	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 25V 0.145A SOT-26	In Stock465 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 145mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V	Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V	Vgs (Max): -8V	Input Capacitance (Ciss) (Max) @ Vds: 27.2pF @ 10V	FET Feature: -	Power Dissipation (Max): 360mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: X2-DFN0806-3	Package / Case: 3-XFDFN
FK3906010L	Panasonic Electronic Components	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100MA SSMINI3	In Stock571 More on Order	Manufacturer: Panasonic Electronic Components	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V	Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.5V @ 1µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V	FET Feature: -	Power Dissipation (Max): 125mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SSMini3-F3-B	Package / Case: SC-89, SOT-490
DMN62D0UWQ-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 41V-60V SOT323	In Stock521 More on Order	Manufacturer: Diodes Incorporated	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
NX2301PVL	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 20V 2A TO236AB	In Stock589 More on Order	Manufacturer: Nexperia USA Inc.	Series: Automotive, AEC-Q101	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V	Vgs(th) (Max) @ Id: 1.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 6V	FET Feature: -	Power Dissipation (Max): 400mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-236AB	Package / Case: TO-236-3, SC-59, SOT-23-3
DMN6075S-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2A SOT23-3	In Stock275 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 85mOhm @ 3.2A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 606pF @ 20V	FET Feature: -	Power Dissipation (Max): 800mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
RSM002N06T2L	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.25A VMT3	In Stock378 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V	Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V	Vgs(th) (Max) @ Id: 2.3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V	FET Feature: -	Power Dissipation (Max): 150mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: VMT3	Package / Case: SOT-723
DMP3068L-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 3.9A SOT23	In Stock354 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V	Rds On (Max) @ Id, Vgs: 72mOhm @ 4.2A, 10V	Vgs(th) (Max) @ Id: 1.3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 708pF @ 15V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
DMG2305UXQ-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.2A SOT23	In Stock573 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V	Vgs(th) (Max) @ Id: 900mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.4W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
DMN33D8LT-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 0.115A	In Stock524 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V	Rds On (Max) @ Id, Vgs: 5Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 0.55nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V	FET Feature: -	Power Dissipation (Max): 240mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-523	Package / Case: SOT-523
DMN10H700S-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET NCH 100V 700MA SOT23	In Stock465 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 50V	FET Feature: Standard	Power Dissipation (Max): 400mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
DMN601WKQ-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET NCH 60V SOT323	In Stock528 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 200mW (Ta)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-323	Package / Case: SC-70, SOT-323