Semiconductors
Passive Components
Sensors
Power
Optoelectronics
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 391/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single SCT3022KL IS AN SIC (SILICON CAR |
In Stock639 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 95A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 18V |
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V |
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA |
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V |
Vgs (Max): +22V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 2879pF @ 800V |
FET Feature: - |
Power Dissipation (Max): 427W |
Operating Temperature: 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247N |
Package / Case: TO-247-3 |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P |
In Stock314 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 118A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 18V |
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V |
Vgs(th) (Max) @ Id: 5.6V @ 23.5mA |
Gate Charge (Qg) (Max) @ Vgs: 172nC @ 18V |
Vgs (Max): +22V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 2884pF @ 500V |
FET Feature: - |
Power Dissipation (Max): 427W |
Operating Temperature: 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247N |
Package / Case: TO-247-3 |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P |
In Stock235 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 95A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 18V |
Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V |
Vgs(th) (Max) @ Id: 5.6V @ 18.2mA |
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 18V |
Vgs (Max): +22V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 2879pF @ 800V |
FET Feature: - |
Power Dissipation (Max): 427W |
Operating Temperature: 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247N |
Package / Case: TO-247-3 |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single BSM400C12P3G202 IS A CHOPPER MOD |
In Stock264 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 400A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 5.6V @ 106.8mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): +22V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1570W (Tc) |
Operating Temperature: 175°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: Module |
Package / Case: Module |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single BSM600C12P3G201 IS A CHOPPER MOD |
In Stock396 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 600A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 5.6V @ 182mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): +22V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2460W (Tc) |
Operating Temperature: 175°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: Module |
Package / Case: Module |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 190MA TO236AB |
In Stock566 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 265mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236AB |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 190MA TO236AB |
In Stock341 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 190mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 265mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236AB |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single NFET SOT23 60V 115MA 7MO |
In Stock446 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.81nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 300mW (Tj) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 (TO-236) |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single NFET SOT23 60V 115MA 7MO |
In Stock358 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 300mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 (TO-236) |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 60V 210MA SC70 |
In Stock342 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SC-70 |
Package / Case: SC-70, SOT-323 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SOT23 |
In Stock529 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 370mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.21A SOT23 |
In Stock364 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 340mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 265MA TO236AB |
In Stock328 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.49nC @ 30V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 20.2pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 310mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236AB |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 270MA TO236AB |
In Stock349 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 310mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236AB |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 210MA SOT-723 |
In Stock544 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.65V, 4.5V |
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 10mA, 4.5V |
Vgs(th) (Max) @ Id: 1.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 310mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-723 |
Package / Case: SOT-723 |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 300MA TO236AB |
In Stock350 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 830mW (Tc) |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236AB |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 0.35A SOT23 |
In Stock275 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 23.2pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 350mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 25V-30V SOT23 |
In Stock475 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFETN-CHAN 60V SOT23 |
In Stock413 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.821nC @ 10V |
Vgs (Max): ±40V |
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 570mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single NFET SOT23 60V 115MA 7.5O |
In Stock244 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 225mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 (TO-236) |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single BSS FAMILY SOT23 T&R 10K |
In Stock392 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 300mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.17A SOT23 |
In Stock461 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 370mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.38A SOT23 |
In Stock441 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 370mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Nexperia |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 300MA TO236AB |
In Stock514 More on Order |
|
Manufacturer: Nexperia USA Inc. |
Series: Automotive, AEC-Q101, TrenchMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 350mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-236AB |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single NFET SOT23 100V 170MA 6.0 |
In Stock163 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.2A X2-DFN1006 |
In Stock485 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 350mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: X2-DFN1006-3 |
Package / Case: 3-XFDFN |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V SOT323 |
In Stock454 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 2Ohm @ 270mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 45.8pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 320mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-323 |
Package / Case: SC-70, SOT-323 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single NFET SOT23 50V 200MA 3.5O |
In Stock503 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.75V, 5V |
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V |
Vgs(th) (Max) @ Id: 1.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 225mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 (TO-236) |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.2A CST3 |
In Stock418 More on Order |
|
Manufacturer: Toshiba Semiconductor and Storage |
Series: U-MOSIII |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±10V |
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 100mW (Ta) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: CST3 |
Package / Case: SC-101, SOT-883 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.38A SOT323 |
In Stock324 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 310mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-323 |
Package / Case: SC-70, SOT-323 |