FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 389/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
R6030JNZ4C13	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single R6030JNZ4 IS A POWER MOSFET WITH	In Stock338 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 15V	Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V	Vgs(th) (Max) @ Id: 7V @ 5.5mA	Gate Charge (Qg) (Max) @ Vgs: 74nC @ 15V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 100V	FET Feature: -	Power Dissipation (Max): 370W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247G	Package / Case: TO-247-3
IMZ120R350M1HXKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V	In Stock277 More on Order	Manufacturer: Infineon Technologies	Series: CoolSiC™	FET Type: N-Channel	Technology: SiC (Silicon Carbide Junction Transistor)	Drain to Source Voltage (Vdss): 1.2kV	Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 15V, 18V	Rds On (Max) @ Id, Vgs: 350mOhm @ 2A, 18V	Vgs(th) (Max) @ Id: 5.7V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 18V	Vgs (Max): +23V, -7V	Input Capacitance (Ciss) (Max) @ Vds: 182pF @ 800V	FET Feature: -	Power Dissipation (Max): 60W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO247-4-1	Package / Case: TO-247-4
SIHG050N60E-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V	In Stock505 More on Order	Manufacturer: Vishay Siliconix	Series: E	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 51A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3459pF @ 100V	FET Feature: -	Power Dissipation (Max): 278W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247AC	Package / Case: TO-247-3
IXTH130N15X4	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 130A TO-247	In Stock481 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 130A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 8.5mOhm @ 70A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4770pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247	Package / Case: TO-247-3
IXTH240N15X4	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 240A TO-247	In Stock619 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 240A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.4mOhm @ 120A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V	FET Feature: -	Power Dissipation (Max): 940W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247	Package / Case: TO-247-3
NTHL040N65S3HF	ON Semiconductor	Transistors - FETs, MOSFETs - Single FET 650V 65AA TO247	In Stock829 More on Order	Manufacturer: ON Semiconductor	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
NTHLD040N65S3HF	ON Semiconductor	Transistors - FETs, MOSFETs - Single FET 650V 65A TO247AD	In Stock278 More on Order	Manufacturer: ON Semiconductor	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IXFT100N30X3HV	IXYS	Transistors - FETs, MOSFETs - Single 300V/100A ULTRA JUNCTION X3-CLAS	In Stock339 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 300V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7.66nF @ 25V	FET Feature: -	Power Dissipation (Max): 480W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-268HV	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IMW120R220M1HXKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V	In Stock183 More on Order	Manufacturer: Infineon Technologies	Series: CoolSiC™	FET Type: N-Channel	Technology: SiC (Silicon Carbide Junction Transistor)	Drain to Source Voltage (Vdss): 1.2kV	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 15V, 18V	Rds On (Max) @ Id, Vgs: 286mOhm @ 4A, 18V	Vgs(th) (Max) @ Id: 5.7V @ 1.6mA	Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 18V	Vgs (Max): +23V, -7V	Input Capacitance (Ciss) (Max) @ Vds: 289pF @ 800V	FET Feature: -	Power Dissipation (Max): 75W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO247-3-41	Package / Case: TO-247-3
MSC280SMA120B	Microsemi	Transistors - FETs, MOSFETs - Single GEN2 SIC MOSFET 1200V 280MOHM TO	In Stock250 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: N-Channel	Technology: SiC (Silicon Carbide Junction Transistor)	Drain to Source Voltage (Vdss): 1.2kV	Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 20V	Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 20V	Vgs(th) (Max) @ Id: 2.8V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 20V	Vgs (Max): +25V, -10V	Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 1000V	FET Feature: -	Power Dissipation (Max): 55W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
MSC280SMA120S	Microsemi	Transistors - FETs, MOSFETs - Single GEN2 SIC MOSFET 1200V 280MOHM D3	In Stock248 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: N-Channel	Technology: SiC (Silicon Carbide Junction Transistor)	Drain to Source Voltage (Vdss): 1.2kV	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D3Pak	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
IMZ120R220M1HXKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V	In Stock514 More on Order	Manufacturer: Infineon Technologies	Series: CoolSiC™	FET Type: N-Channel	Technology: SiC (Silicon Carbide Junction Transistor)	Drain to Source Voltage (Vdss): 1.2kV	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 15V, 18V	Rds On (Max) @ Id, Vgs: 220mOhm @ 4A, 18V	Vgs(th) (Max) @ Id: 5.7V @ 1.6mA	Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 18V	Vgs (Max): +23V, -7V	Input Capacitance (Ciss) (Max) @ Vds: 289pF @ 800V	FET Feature: -	Power Dissipation (Max): 75W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO247-4-1	Package / Case: TO-247-4
STW43NM60ND	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 35A TO-247	In Stock674 More on Order	Manufacturer: STMicroelectronics	Series: FDmesh™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 35A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 88mOhm @ 17.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 50V	FET Feature: -	Power Dissipation (Max): 255W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
R6042JNZ4C13	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single R6042JNZ4 IS A POWER MOSFET WITH	In Stock266 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 42A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 15V	Rds On (Max) @ Id, Vgs: 104mOhm @ 21A, 15V	Vgs(th) (Max) @ Id: 7V @ 5.5mA	Gate Charge (Qg) (Max) @ Vgs: 100nC @ 15V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 100V	FET Feature: -	Power Dissipation (Max): 495W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247G	Package / Case: TO-247-3
R6047KNZ4C13	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 600V 47A POWER MOSFET. R604	In Stock426 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 47A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V	FET Feature: -	Power Dissipation (Max): 481W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247	Package / Case: TO-247-3
STY60NK30Z	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 60A MAX247	In Stock328 More on Order	Manufacturer: STMicroelectronics	Series: SuperMESH™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 300V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V	FET Feature: -	Power Dissipation (Max): 450W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: MAX247™	Package / Case: TO-247-3
IXFT180N20X3HV	IXYS	Transistors - FETs, MOSFETs - Single 200V/180A ULTRA JUNCTION X3-CLAS	In Stock529 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 180A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V	FET Feature: -	Power Dissipation (Max): 780W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-268HV	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
SIHG039N60EF-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 61A TO-247AC	In Stock371 More on Order	Manufacturer: Vishay Siliconix	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IMW120R140M1HXKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V	In Stock594 More on Order	Manufacturer: Infineon Technologies	Series: CoolSiC™	FET Type: N-Channel	Technology: SiC (Silicon Carbide Junction Transistor)	Drain to Source Voltage (Vdss): 1.2kV	Current - Continuous Drain (Id) @ 25°C: 19A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 15V, 18V	Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V	Vgs(th) (Max) @ Id: 5.7V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 13nC @ 18V	Vgs (Max): +23V, -7V	Input Capacitance (Ciss) (Max) @ Vds: 454pF @ 800V	FET Feature: -	Power Dissipation (Max): 94W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO247-3-41	Package / Case: TO-247-3
R6047ENZ4C13	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 600V 47A POWER MOSFET. R604	In Stock450 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 47A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 72mOhm @ 25.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V	FET Feature: -	Power Dissipation (Max): 481W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247	Package / Case: TO-247-3
R6547KNZ4C13	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 650V 47A POWER MOSFET. R654	In Stock403 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 47A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 80mOhm @ 25.8A, 10V	Vgs(th) (Max) @ Id: 5V @ 1.72mA	Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V	FET Feature: -	Power Dissipation (Max): 480W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247	Package / Case: TO-247-3
STW54NM65ND	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 59A TO-247	In Stock405 More on Order	Manufacturer: STMicroelectronics	Series: FDmesh™ II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 49A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 65mOhm @ 24.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 188nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 50V	FET Feature: -	Power Dissipation (Max): 350W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
IMZ120R140M1HXKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V	In Stock562 More on Order	Manufacturer: Infineon Technologies	Series: CoolSiC™	FET Type: N-Channel	Technology: SiC (Silicon Carbide Junction Transistor)	Drain to Source Voltage (Vdss): 1.2kV	Current - Continuous Drain (Id) @ 25°C: 19A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 15V, 18V	Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V	Vgs(th) (Max) @ Id: 5.7V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 13nC @ 18V	Vgs (Max): +23V, -7V	Input Capacitance (Ciss) (Max) @ Vds: 454pF @ 800V	FET Feature: -	Power Dissipation (Max): 94W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO247-4-1	Package / Case: TO-247-4
MSC140SMA120B	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET 1200V 25A TO-247	In Stock360 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
NTHL027N65S3HF	ON Semiconductor	Transistors - FETs, MOSFETs - Single FET 650V 75A TO247	In Stock288 More on Order	Manufacturer: ON Semiconductor	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
STWA40N95K5	STMicroelectronics	Transistors - FETs, MOSFETs - Single N-CHANNEL 950 V, 0.110 OHM TYP.,	In Stock272 More on Order	Manufacturer: STMicroelectronics	Series: MDmesh™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 950V	Current - Continuous Drain (Id) @ 25°C: 38A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 130mOhm @ 19A, 10V	Vgs(th) (Max) @ Id: 5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 100V	FET Feature: -	Power Dissipation (Max): 450W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
IXFH220N20X3	IXYS	Transistors - FETs, MOSFETs - Single 200V/220A ULTRA JUNCTION X3-CLAS	In Stock508 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 220A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 204nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V	FET Feature: -	Power Dissipation (Max): 960W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247	Package / Case: TO-247-3
R6050JNZ4C13	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single NCH 600V 50A POWER MOSFET. R605	In Stock308 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 15V	Rds On (Max) @ Id, Vgs: 83mOhm @ 25A, 15V	Vgs(th) (Max) @ Id: 7V @ 5mA	Gate Charge (Qg) (Max) @ Vgs: 120nC @ 15V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 100V	FET Feature: -	Power Dissipation (Max): 615W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247G	Package / Case: TO-247-3
IMW120R090M1HXKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V	In Stock300 More on Order	Manufacturer: Infineon Technologies	Series: CoolSiC™	FET Type: N-Channel	Technology: SiC (Silicon Carbide Junction Transistor)	Drain to Source Voltage (Vdss): 1.2kV	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 15V, 18V	Rds On (Max) @ Id, Vgs: 117mOhm @ 8.5A, 18V	Vgs(th) (Max) @ Id: 5.7V @ 3.7mA	Gate Charge (Qg) (Max) @ Vgs: 21nC @ 18V	Vgs (Max): +23V, -7V	Input Capacitance (Ciss) (Max) @ Vds: 707pF @ 800V	FET Feature: -	Power Dissipation (Max): 115W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO247-3-41	Package / Case: TO-247-3
IGLD60R070D1AUMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single IC GAN FET 600V 60A 8SON	In Stock273 More on Order	Manufacturer: Infineon Technologies	Series: CoolGaN™	FET Type: N-Channel	Technology: GaNFET (Gallium Nitride)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: 1.6V @ 2.6mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -10V	Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 400V	FET Feature: -	Power Dissipation (Max): 114W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-LSON-8-1	Package / Case: 8-LDFN Exposed Pad