Semiconductors
Passive Components
Sensors
Power
Optoelectronics
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 390/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V |
In Stock186 More on Order |
|
Manufacturer: Infineon Technologies |
Series: CoolSiC™ |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V |
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.5A, 18V |
Vgs(th) (Max) @ Id: 5.7V @ 3.7mA |
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 18V |
Vgs (Max): +23V, -7V |
Input Capacitance (Ciss) (Max) @ Vds: 707pF @ 800V |
FET Feature: - |
Power Dissipation (Max): 115W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-4-1 |
Package / Case: TO-247-4 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 650V TO247AC |
In Stock267 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: E |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 99A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 228nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 7612pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 524W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AC |
Package / Case: TO-247-3 |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single NCH 600V 76A POWER MOSFET. R607 |
In Stock325 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 76A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 735W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single NCH 600V 76A POWER MOSFET. R607 |
In Stock337 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 76A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 735W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V |
In Stock287 More on Order |
|
Manufacturer: Infineon Technologies |
Series: CoolSiC™ |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V |
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V |
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA |
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 18V |
Vgs (Max): +23V, -7V |
Input Capacitance (Ciss) (Max) @ Vds: 1.06nF @ 800V |
FET Feature: - |
Power Dissipation (Max): 150W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-3-41 |
Package / Case: TO-247-3 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V |
In Stock471 More on Order |
|
Manufacturer: Infineon Technologies |
Series: CoolSiC™ |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V |
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V |
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA |
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 18V |
Vgs (Max): +23V, -7V |
Input Capacitance (Ciss) (Max) @ Vds: 1.06nF @ 800V |
FET Feature: - |
Power Dissipation (Max): 150W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-4-1 |
Package / Case: TO-247-4 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single 200V/300A ULTRA JUNCTION X3-CLAS |
In Stock271 More on Order |
|
Manufacturer: IXYS |
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 300A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 23800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1250W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PLUS247™-3 |
Package / Case: TO-247-3 |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 60A MAX247 |
In Stock541 More on Order |
|
Manufacturer: STMicroelectronics |
Series: MDmesh™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 266nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 560W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: MAX247™ |
Package / Case: TO-247-3 |
|
|
|
Vishay Semiconductor Diodes Division |
Transistors - FETs, MOSFETs - Single SINGLE SWITCH PWR MODULE SOT-227 |
In Stock521 More on Order |
|
Manufacturer: Vishay Semiconductor Diodes Division |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 287A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 200A, 10V |
Vgs(th) (Max) @ Id: 4.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 16500pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 937W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single 2000V TO 3000V POLAR3 POWER MOSF |
In Stock612 More on Order |
|
Manufacturer: IXYS |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 3000V |
Current - Continuous Drain (Id) @ 25°C: 1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 50Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 195W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-268 |
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 550V 48A ISOTOP |
In Stock452 More on Order |
|
Manufacturer: STMicroelectronics |
Series: MDmesh™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 550V |
Current - Continuous Drain (Id) @ 25°C: 48A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 450W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: ISOTOP |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 400A PLUS247 |
In Stock540 More on Order |
|
Manufacturer: IXYS |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 400A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1500W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PLUS247™ |
Package / Case: TO-247-3 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V |
In Stock311 More on Order |
|
Manufacturer: Infineon Technologies |
Series: CoolSiC™ |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V |
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V |
Vgs(th) (Max) @ Id: 5.7V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 18V |
Vgs (Max): +23V, -7V |
Input Capacitance (Ciss) (Max) @ Vds: 2.12nF @ 800V |
FET Feature: - |
Power Dissipation (Max): 227W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-3-41 |
Package / Case: TO-247-3 |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single N-CHANNEL 650 V, 0.014 OHM TYP., |
In Stock297 More on Order |
|
Manufacturer: STMicroelectronics |
Series: MDmesh™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 130A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 17mOhm @ 65A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 363nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 15600pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 672W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P |
In Stock129 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 18V |
Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V |
Vgs(th) (Max) @ Id: 4V @ 4.4mA |
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 18V |
Vgs (Max): +22V, -6V |
Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 800V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247N |
Package / Case: TO-247-3 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V |
In Stock232 More on Order |
|
Manufacturer: Infineon Technologies |
Series: CoolSiC™ |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V |
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V |
Vgs(th) (Max) @ Id: 5.7V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 18V |
Vgs (Max): +23V, -7V |
Input Capacitance (Ciss) (Max) @ Vds: 2.12nF @ 800V |
FET Feature: - |
Power Dissipation (Max): 227W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-4-1 |
Package / Case: TO-247-4 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 400A SOT-227 |
In Stock541 More on Order |
|
Manufacturer: IXYS |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 400A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1070W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single GEN2 SIC MOSFET 1200V 80MOHM SOT |
In Stock369 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 35A |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 (ISOTOP®) |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET 1KV 70A ULTRA JCT PLUS247 |
In Stock188 More on Order |
|
Manufacturer: IXYS |
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: 6V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 9160pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1785W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PLUS264™ |
Package / Case: TO-264-3, TO-264AA |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 140A ISOTOP |
In Stock302 More on Order |
|
Manufacturer: STMicroelectronics |
Series: STripFET™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 140A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 500W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
Cree/Wolfspeed |
Transistors - FETs, MOSFETs - Single 1200V, 21 MOHM, G3 SIC MOSFET |
In Stock539 More on Order |
|
Manufacturer: Cree/Wolfspeed |
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single SILICON CARBIDE POWER MOSFET 650 |
In Stock337 More on Order |
|
Manufacturer: STMicroelectronics |
Series: - |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 18V |
Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 157nC @ 18V |
Vgs (Max): +22V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 330W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: H2PAK-7 |
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P |
In Stock531 More on Order |
|
Manufacturer: Rohm Semiconductor |
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 18V |
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V |
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA |
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 18V |
Vgs (Max): +22V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 1526pF @ 500V |
FET Feature: - |
Power Dissipation (Max): 262W |
Operating Temperature: 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247N |
Package / Case: TO-247-3 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single GEN2 SIC MOSFET 700V 15MOHM D3PA |
In Stock431 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 700V |
Current - Continuous Drain (Id) @ 25°C: 166A |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D3Pak |
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single GEN2 SIC MOSFET 1200V 40MOHM SOT |
In Stock374 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 53A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 20V |
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id: 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V |
Vgs (Max): +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V |
FET Feature: - |
Power Dissipation (Max): 208W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 (ISOTOP®) |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single GEN2 SIC MOSFET 1200V 25MOHM TO- |
In Stock340 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 103A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 20V |
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id: 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V |
Vgs (Max): +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V |
FET Feature: - |
Power Dissipation (Max): 500W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
|
|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single SILICON CARBIDE POWER MOSFET 650 |
In Stock508 More on Order |
|
Manufacturer: STMicroelectronics |
Series: - |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 18V |
Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 18V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 157nC @ 18V |
Vgs (Max): +22V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 390W (Tc) |
Operating Temperature: -55°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: HiP247™ |
Package / Case: TO-247-3 |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single GEN2 SIC MOSFET 1200V 25MOHM D3P |
In Stock281 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 100A |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D3Pak |
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET 1000V 74A ULTRA JUNCTION |
In Stock362 More on Order |
|
Manufacturer: IXYS |
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 74A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 66mOhm @ 37A, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1170W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single GEN2 SIC MOSFET 1200V 25MOHM SOT |
In Stock683 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 77A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 20V |
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id: 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V |
Vgs (Max): +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V |
FET Feature: - |
Power Dissipation (Max): 278W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 (ISOTOP®) |
Package / Case: SOT-227-4, miniBLOC |