Top

FETs, MOSFETs - Single

Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Loading...
Reset
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 999/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BUK9E1R8-40E,127
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 120A I2PAK

In Stock548

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 16400pF @ 25V
FET Feature: -
Power Dissipation (Max): 349W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
BUK9Y7R8-80E,115
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V LFPAK

In Stock461

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
BUK9Y98-80E,115
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V LFPAK

In Stock610

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
BUK9Y9R9-80E,115
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V LFPAK

In Stock646

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
PSMN4R6-100XS,127
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 70.4A TO-220F

In Stock543

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 50V
FET Feature: -
Power Dissipation (Max): 63.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack, Isolated Tab
PSMN8R5-100XSQ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 49A TO-220F

In Stock251

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 49A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5512pF @ 50V
FET Feature: -
Power Dissipation (Max): 55W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack, Isolated Tab
BUK7C1R2-40EJ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 200A D2PAK-7

In Stock515

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
BUK7C1R4-40EJ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 200A D2PAK-7

In Stock394

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
BUK7C1R8-60EJ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 200A D2PAK-7

In Stock173

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
BUK7C2R2-60EJ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 200A D2PAK-7

In Stock391

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
BUK7C3R1-80EJ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 200A D2PAK-7

In Stock135

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
BUK7C3R8-80EJ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 186A D2PAK-7

In Stock497

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
BUK7C4R5-100EJ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 169A D2PAK-7

In Stock494

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
BUK7C5R4-100EJ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 147A D2PAK-7

In Stock244

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
BUK9C2R2-60EJ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V D2PAK

In Stock289

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
BUK9C3R8-80EJ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V D2PAK

In Stock484

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
BUK9C5R3-100EJ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V D2PAK

In Stock327

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
PMT200EN,115
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 1.8A SC-73

In Stock344

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 80V
FET Feature: -
Power Dissipation (Max): 800mW (Ta), 8.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
PMT760EN,115
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V SC-73

In Stock148

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 950mOhm @ 800mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 80V
FET Feature: -
Power Dissipation (Max): 800mW (Ta), 6.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
BUK951R8-40EQ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V TO-220AB

In Stock458

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
BUK9C1R3-40EJ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V D2PAK

In Stock212

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 90A, 5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK-7
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
PSMN3R9-60XSQ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 75A TO-220F

In Stock387

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5494pF @ 25V
FET Feature: -
Power Dissipation (Max): 55W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack, Isolated Tab
PSMN8R5-108ESQ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 108V 100A I2PAK

In Stock470

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 108V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5512pF @ 50V
FET Feature: -
Power Dissipation (Max): 263W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I2PAK
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
BUK761R5-40EJ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 120A D2PAK

In Stock302

More on Order

Manufacturer: NXP USA Inc.
Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.51mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11340pF @ 25V
FET Feature: -
Power Dissipation (Max): 349W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN7R6-60XSQ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V TO220AB

In Stock213

More on Order

Manufacturer: NXP USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 51.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 38.7nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2651pF @ 30V
FET Feature: -
Power Dissipation (Max): 46W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack, Isolated Tab
BUK761R7-40E/GFJ
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH D2PAK

In Stock140

More on Order

Manufacturer: NXP USA Inc.
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BUK7Y25-60E/GFX
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH LFPAK

In Stock513

More on Order

Manufacturer: NXP USA Inc.
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -
BUK7Y25-80E/CX
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH LFPAK

In Stock226

More on Order

Manufacturer: NXP USA Inc.
Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
FET Feature: -
Power Dissipation (Max): 95W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
BUK7Y25-80E/GFX
NXP

Transistors - FETs, MOSFETs - Single

MOSFET N-CH LFPAK

In Stock555

More on Order

Manufacturer: NXP USA Inc.
Series: TrenchMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
FET Feature: -
Power Dissipation (Max): 95W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669
CA/JCOP/MF4K/4B-UZ
NXP

Transistors - FETs, MOSFETs - Single

CA/JCOP/MF4K/4B-UZ

In Stock520

More on Order

Manufacturer: NXP USA Inc.
Series: *
FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: -
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -