FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 903/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
RJK5030DPD-00#J2	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 5A MP3A	In Stock238 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V	FET Feature: -	Power Dissipation (Max): 41.7W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: MP-3A	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RJK5031DPD-00#J2	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 3A MP3A	In Stock273 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V	FET Feature: -	Power Dissipation (Max): 40.3W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: MP-3A	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RJK5034DPP-E0#T2	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 1.2A TO220	In Stock460 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-220FP	Package / Case: TO-220-3 Full Pack
RJK5035DPP-E0#T2	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 10A TO220	In Stock553 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 10A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 850mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 25V	FET Feature: -	Power Dissipation (Max): 29.5W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220FP	Package / Case: TO-220-3 Full Pack
RJK6002DPD-00#J2	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2A MP3A	In Stock395 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V	FET Feature: -	Power Dissipation (Max): 30W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: MP-3A	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RJK6006DPD-00#J2	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 5A MP3A	In Stock294 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V	FET Feature: -	Power Dissipation (Max): 77.6W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: MP-3A	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RJK6006DPP-E0#T2	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 5A TO220	In Stock219 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V	FET Feature: -	Power Dissipation (Max): 29W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220FP	Package / Case: TO-220-3 Full Pack
RJK6011DJE-00#Z0	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.1A TO92	In Stock406 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 52Ohm @ 50mA, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V	FET Feature: -	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-92MOD	Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
RJK6012DPE-00#J3	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A LDPAK	In Stock403 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 10A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 920mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-LDPAK	Package / Case: SC-83
RJK6012DPP-E0#T2	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A TO220	In Stock324 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 10A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 920mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V	FET Feature: -	Power Dissipation (Max): 30W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220FP	Package / Case: TO-220-3 Full Pack
RJK6013DPE-00#J3	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A LDPAK	In Stock537 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 700mOhm @ 5.5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-LDPAK	Package / Case: SC-83
RJK6013DPP-E0#T2	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A TO220	In Stock373 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 700mOhm @ 5.5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V	FET Feature: -	Power Dissipation (Max): 30W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220FP	Package / Case: TO-220-3 Full Pack
RJK6014DPP-E0#T2	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 16A TO220	In Stock521 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 16A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 575mOhm @ 8A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V	FET Feature: -	Power Dissipation (Max): 35W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220FP	Package / Case: TO-220-3 Full Pack
RJK6015DPK-00#T0	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21A TO3P	In Stock166 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 21A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
RJK6015DPM-00#T1	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21A TO3PFM	In Stock442 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 21A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 360mOhm @ 10.5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V	FET Feature: -	Power Dissipation (Max): 60W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3PFM	Package / Case: TO-3PFM, SC-93-3
RJK6018DPK-00#T0	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A TO3P	In Stock447 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 30A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 235mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
RJK6018DPM-00#T1	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A TO3PFM	In Stock333 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 30A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 235mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V	FET Feature: -	Power Dissipation (Max): 60W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3PFM	Package / Case: TO-3PFM, SC-93-3
RJK6020DPK-00#T0	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 32A TO3P	In Stock403 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 32A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 175mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
RJK6026DPE-00#J3	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 5A LDPAK	In Stock251 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V	FET Feature: -	Power Dissipation (Max): 62.5W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-LDPAK	Package / Case: SC-83
RJK6032DPD-00#J2	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 3A MP3A	In Stock588 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 25V	FET Feature: -	Power Dissipation (Max): 40.3W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: MP-3A	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RJK6032DPH-E0#T2	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 3A TO251	In Stock304 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 25V	FET Feature: -	Power Dissipation (Max): 40.3W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-251	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
RJK6035DPP-E0#T2	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 6A TO220	In Stock329 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.37Ohm @ 3A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 765pF @ 25V	FET Feature: -	Power Dissipation (Max): 29.5W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220FP	Package / Case: TO-220-3 Full Pack
RJL5012DPE-00#J3	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 12A LDPAK	In Stock410 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 12A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 27.8nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-LDPAK	Package / Case: SC-83
RJL5012DPP-M0#T2	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 12A TO220	In Stock469 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 12A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 27.8nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V	FET Feature: -	Power Dissipation (Max): 30W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220FL	Package / Case: TO-220-3 Full Pack
RJL5014DPK-00#T0	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 19A TO3P	In Stock472 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 19A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 400mOhm @ 9.5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
RJL5020DPK-00#T0	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 38A TO3P	In Stock233 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 38A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 135mOhm @ 19A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
RJL6012DPE-00#J3	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A LDPAK	In Stock532 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 10A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-LDPAK	Package / Case: SC-83
RJL6013DPE-00#J3	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A LDPAK	In Stock333 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 810mOhm @ 5.5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-LDPAK	Package / Case: SC-83
RJL6018DPK-00#T0	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 27A TO3P	In Stock472 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 27A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 265mOhm @ 13.5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3830pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
RJL6020DPK-00#T0	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A TO3P	In Stock378 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 30A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 210mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3