FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 900/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BUK962R1-40E,118	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A D2PAK	In Stock531 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 120A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 87.8nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 13160pF @ 25V	FET Feature: -	Power Dissipation (Max): 293W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
AOI1N60	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 1.3A TO251A	In Stock256 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V	FET Feature: -	Power Dissipation (Max): 45W (Tc)	Operating Temperature: -50°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-251A	Package / Case: TO-251-3 Stub Leads, IPak
2SK1339-E	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 3A TO-3P	In Stock554 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 7Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V	FET Feature: -	Power Dissipation (Max): 80W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
2SK1340-E	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 5A TO-3P	In Stock257 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4Ohm @ 3A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
2SK1341-E	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 6A TO-3P	In Stock422 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 3A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 10V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
2SK1342-E	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 6A TO-3P	In Stock218 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
2SK1775-E	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 8A TO-3P	In Stock218 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V	FET Feature: -	Power Dissipation (Max): 60W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
2SK1859-E	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 6A TO-3P	In Stock309 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 3A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 10V	FET Feature: -	Power Dissipation (Max): 60W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
2SK2225-E	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1500V 2A TO-3P	In Stock362 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1500V	Current - Continuous Drain (Id) @ 25°C: 2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 15V	Rds On (Max) @ Id, Vgs: 12Ohm @ 1A, 15V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 984.7pF @ 30V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3PFM	Package / Case: TO-3PFM, SC-93-3
2SK4093TZ-E	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 1A TO-92	In Stock494 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V	Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 4V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V	FET Feature: -	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-92MOD	Package / Case: TO-226-3, TO-92-3 Long Body
2SK4150TZ-E	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 0.4A TO-92	In Stock315 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V	Rds On (Max) @ Id, Vgs: 5.7Ohm @ 200mA, 4V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 25V	FET Feature: -	Power Dissipation (Max): 750mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-92	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2SK4151TZ-E	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 1A TO-92	In Stock399 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V	Rds On (Max) @ Id, Vgs: 1.95Ohm @ 500mA, 4V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 98pF @ 10V	FET Feature: -	Power Dissipation (Max): 750mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-92	Package / Case: TO-226-3, TO-92-3 (TO-226AA)
H5N2522LSTL-E	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 20A LDPAK	In Stock213 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 20A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V	FET Feature: -	Power Dissipation (Max): 75W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-LDPAK	Package / Case: SC-83
HS54095TZ-E	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.2A TO-92	In Stock349 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 16.5Ohm @ 100mA, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 25V	FET Feature: -	Power Dissipation (Max): 750mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-92-3	Package / Case: TO-226-3, TO-92-3 Short Body
N0413N-ZK-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TO-263	In Stock354 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 100A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5550pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.5W (Ta), 119W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (D²Pak)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N0601N-ZK-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A TO-263	In Stock522 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 100A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7730pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.5W (Ta), 156W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP100N04PUK-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A TO-263	In Stock495 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 176W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263	Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
NP100N055PUK-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 100A TO-263	In Stock535 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.25mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 176W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (D²Pak)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP109N04PUG-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 110A TO-263	In Stock481 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 110A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.3mOhm @ 55A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 220W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263-3	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP109N04PUK-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 110A TO-263	In Stock308 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 110A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 250W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (D²Pak)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP109N055PUK-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 110A TO-263	In Stock454 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 110A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.2mOhm @ 55A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 11250pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 250W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP110N04PUK-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 110A TO-263	In Stock418 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 110A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 297nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 348W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263-3	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP110N055PUG-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 110A TO-263	In Stock271 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 110A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.4mOhm @ 55A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 288W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP110N055PUK-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 110A TO-263	In Stock260 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 110A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 294nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 16050pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 348W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP160N055TUK-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 160A TO-263	In Stock370 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 160A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 11250pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 250W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263-7	Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
NP180N04TUK-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 180A TO-263	In Stock303 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 180A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.05mOhm @ 90A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 297nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 348W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263-7	Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
NP180N055TUK-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 180A TO-263	In Stock490 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 180A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 294nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 16050pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 348W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263-7	Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
NP40N10PDF-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 40A TO-263	In Stock472 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 40A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 120W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (D²Pak)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NP40N10YDF-E1-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 40A MP-25ZP	In Stock161 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 40A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V	FET Feature: -	Power Dissipation (Max): 1W (Ta), 120W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-HSON	Package / Case: 8-PowerLDFN
NP60N04MUK-S18-AY	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 60A TO-220	In Stock428 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 105W (Tc)	Operating Temperature: 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220	Package / Case: TO-220-3 Full Pack