FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 905/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPD60R600P6	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7.3A TO252	In Stock474 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™ P6	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 557pF @ 100V	FET Feature: -	Power Dissipation (Max): 63W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMG7401SFG-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V POWERDI3333-8	In Stock584 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V	Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 2987pF @ 15V	FET Feature: -	Power Dissipation (Max): 940mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8	Package / Case: 8-PowerVDFN
DMP3008SFG-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 8.6A POWERDI	In Stock524 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V	FET Feature: -	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8	Package / Case: 8-PowerVDFN
DMP3120L-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2.8A SOT-23	In Stock499 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V	Vgs(th) (Max) @ Id: 1.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.4W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
ZXM62P03E6TC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 1.5A SOT23-6	In Stock562 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 230mOhm @ 800mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V	FET Feature: -	Power Dissipation (Max): 625mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-26	Package / Case: SOT-23-6
ZXMP3F35N8TA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 9.3A 8SO	In Stock530 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 2.6V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 77.1nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.56W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
ZXMP3F36N8TA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 7.2A 8SO	In Stock184 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 43.9nC @ 15V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2265pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.56W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
ZXMP3F37N8TA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 6.4A 8SOP	In Stock351 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 31.6nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1678pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.56W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
APTC90SKM60T1G	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 59A SP1	In Stock496 More on Order	Manufacturer: Microsemi Corporation	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 59A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 6mA	Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V	FET Feature: Super Junction	Power Dissipation (Max): 462W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP1	Package / Case: SP1
APTC90DAM60T1G	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 59A SP1	In Stock414 More on Order	Manufacturer: Microsemi Corporation	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 59A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 6mA	Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V	FET Feature: Super Junction	Power Dissipation (Max): 462W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SP1	Package / Case: SP1
APT14F100S	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 14A D3PAK	In Stock642 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 8™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 14A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 25V	FET Feature: -	Power Dissipation (Max): 500W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D3Pak	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
APT15F60S	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 16A D3PAK	In Stock267 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 8™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 16A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 430mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: 5V @ 500µA	Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2882pF @ 25V	FET Feature: -	Power Dissipation (Max): 290W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D3Pak	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
APT17F80S	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 18A D3PAK	In Stock308 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 8™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 18A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 580mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3757pF @ 25V	FET Feature: -	Power Dissipation (Max): 500W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D3Pak	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
APT18F60S	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 19A D3PAK	In Stock296 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 8™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 19A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 370mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V	FET Feature: -	Power Dissipation (Max): 335W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D3Pak	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
APT20F50S	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 20A D3PAK	In Stock408 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 8™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 20A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 300mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 5V @ 500µA	Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V	FET Feature: -	Power Dissipation (Max): 290W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D3Pak	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
APT23F60S	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 23A D3PAK	In Stock372 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 8™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 24A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4415pF @ 25V	FET Feature: -	Power Dissipation (Max): 415W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D3Pak	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
APT24F50S	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 24A D3PAK	In Stock361 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 8™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 24A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 240mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 25V	FET Feature: -	Power Dissipation (Max): 335W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D3Pak	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
APT28F60S	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A D3PAK	In Stock482 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 8™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 220mOhm @ 14A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 5575pF @ 25V	FET Feature: -	Power Dissipation (Max): 520W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D3Pak	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
APT33N90JCU2	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 33A SOT227	In Stock481 More on Order	Manufacturer: Microsemi Corporation	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 33A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 3mA	Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V	FET Feature: Super Junction	Power Dissipation (Max): 290W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227	Package / Case: SOT-227-4, miniBLOC
APT33N90JCU3	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 33A SOT227	In Stock608 More on Order	Manufacturer: Microsemi Corporation	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 33A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 3mA	Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V	FET Feature: Super Junction	Power Dissipation (Max): 290W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227	Package / Case: SOT-227-4, miniBLOC
APT11F80S	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 12A D3PAK	In Stock428 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 8™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2471pF @ 25V	FET Feature: -	Power Dissipation (Max): 337W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D3Pak	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
APT17F100S	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 17A D3PAK	In Stock477 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 8™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 17A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 780mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4845pF @ 25V	FET Feature: -	Power Dissipation (Max): 625W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D3Pak	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
APT9F100S	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 9A D3PAK	In Stock300 More on Order	Manufacturer: Microsemi Corporation	Series: POWER MOS 8™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.6Ohm @ 5A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2606pF @ 25V	FET Feature: -	Power Dissipation (Max): 337W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D3Pak	Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
APT30N60SC6	Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A D3PAK	In Stock631 More on Order	Manufacturer: Microsemi Corporation	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 960µA	Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2267pF @ 25V	FET Feature: -	Power Dissipation (Max): 219W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D3Pak	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
2SK1829TE85LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.05A USM	In Stock362 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V	Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): 10V	Input Capacitance (Ciss) (Max) @ Vds: 5.5pF @ 3V	FET Feature: -	Power Dissipation (Max): 100mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-70	Package / Case: SC-70, SOT-323
HN4K03JUTE85LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.1A USV	In Stock268 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V	Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): 10V	Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V	FET Feature: -	Power Dissipation (Max): 200mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: USV	Package / Case: 5-TSSOP, SC-70-5, SOT-353
SSM3J14TTE85LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 2.7A TSM	In Stock348 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSII	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 85mOhm @ 1.35A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 413pF @ 15V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TSM	Package / Case: TO-236-3, SC-59, SOT-23-3
SSM5N16FUTE85LF	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.1A USV	In Stock484 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: π-MOSVI	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V	Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V	FET Feature: -	Power Dissipation (Max): 200mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: USV	Package / Case: 5-TSSOP, SC-70-5, SOT-353
2SK2035(T5L,F,T)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.1A SSM	In Stock207 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V	Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): 10V	Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V	FET Feature: -	Power Dissipation (Max): 100mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SSM	Package / Case: SC-75, SOT-416
SSM3J16CT(TPL3)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.1A CST3	In Stock411 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: π-MOSVI	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V	Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.1V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 3V	FET Feature: -	Power Dissipation (Max): 100mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: CST3	Package / Case: SC-101, SOT-883