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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 906/999
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Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SSM3J36MFV,L3F
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 0.33A VESM
In Stock452

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Manufacturer: Toshiba Semiconductor and Storage
Series: U-MOSIII
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
FET Feature: -
Power Dissipation (Max): 150mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: VESM
Package / Case: SOT-723
SSM3K01T(TE85L,F)
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 3.2A TSM
In Stock602

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Manufacturer: Toshiba Semiconductor and Storage
Series: π-MOSVI
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.6A, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 152pF @ 10V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSM
Package / Case: TO-236-3, SC-59, SOT-23-3
SSM3K301T(TE85L,F)
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 3.5A TSM
In Stock404

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Manufacturer: Toshiba Semiconductor and Storage
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSM
Package / Case: TO-236-3, SC-59, SOT-23-3
SSM3K302T(TE85L,F)
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 3A TSM
In Stock219

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Manufacturer: Toshiba Semiconductor and Storage
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Rds On (Max) @ Id, Vgs: 71mOhm @ 2A, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 4V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSM
Package / Case: TO-236-3, SC-59, SOT-23-3
SSM3K309T(TE85L,F)
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 4.7A TSM
In Stock207

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Manufacturer: Toshiba Semiconductor and Storage
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4A, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSM
Package / Case: TO-236-3, SC-59, SOT-23-3
SSM3K310T(TE85L,F)
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 5A S-MOS
In Stock485

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Manufacturer: Toshiba Semiconductor and Storage
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Rds On (Max) @ Id, Vgs: 28mOhm @ 4A, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 4V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 10V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSM
Package / Case: TO-236-3, SC-59, SOT-23-3
SSM3K318T,LF
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 2.5A TSM
In Stock245

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Manufacturer: Toshiba Semiconductor and Storage
Series: U-MOSIV
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 107mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 30V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSM
Package / Case: TO-236-3, SC-59, SOT-23-3
SSM3K7002BF,LF
Toshiba Semiconductor and Storage

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 0.2A S-MINI
In Stock417

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Manufacturer: Toshiba Semiconductor and Storage
Series: U-MOSIV
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-59
Package / Case: TO-236-3, SC-59, SOT-23-3
APTML60U12R020T1AG
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 45A SP1
In Stock432

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Manufacturer: Microsemi Corporation
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
FET Feature: -
Power Dissipation (Max): 568W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
APT38N60SC6
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 38A D3PAK
In Stock329

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Manufacturer: Microsemi Corporation
Series: CoolMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2826pF @ 25V
FET Feature: -
Power Dissipation (Max): 278W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3Pak
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
APT5014SLLG/TR
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 35A TO-247
In Stock428

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Manufacturer: Microsemi Corporation
Series: POWER MOS 7®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3261pF @ 25V
FET Feature: -
Power Dissipation (Max): 403W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3
APTML10UM09R004T1AG
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 154A SP1
In Stock412

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Manufacturer: Microsemi Corporation
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
APT20M120JCU2
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1200V 20A SOT227
In Stock280

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Manufacturer: Microsemi Corporation
Series: POWER MOS 8™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
FET Feature: -
Power Dissipation (Max): 543W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
APT20M120JCU3
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1200V 20A SOT227
In Stock588

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Manufacturer: Microsemi Corporation
Series: POWER MOS 8™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
FET Feature: -
Power Dissipation (Max): 543W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
APT26M100JCU3
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1000V 26A SOT227
In Stock368

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Manufacturer: Microsemi Corporation
Series: POWER MOS 8™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
FET Feature: -
Power Dissipation (Max): 543W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
APT33N90JCCU2
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 900V 33A SOT227
In Stock440

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Manufacturer: Microsemi Corporation
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
APT33N90JCCU3
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 900V 33A SOT227
In Stock242

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Manufacturer: Microsemi Corporation
Series: CoolMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
APT58M50JCU3
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 58A SOT227
In Stock377

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Manufacturer: Microsemi Corporation
Series: POWER MOS 8™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 42A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V
FET Feature: -
Power Dissipation (Max): 543W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
APTC60DAM24CT1G
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 95A SP4
In Stock402

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Manufacturer: Microsemi Corporation
Series: CoolMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
FET Feature: -
Power Dissipation (Max): 462W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP4
Package / Case: SP4
APTC90DAM60CT1G
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 900V 59A SP1
In Stock309

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Manufacturer: Microsemi Corporation
Series: CoolMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 462W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
APTM100DA18CT1G
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1000V 40A SP1
In Stock540

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Manufacturer: Microsemi Corporation
Series: POWER MOS 8™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 216mOhm @ 33A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V
FET Feature: -
Power Dissipation (Max): 657W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
APTM100UM65SCAVG
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1000V 145A SP6
In Stock611

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Manufacturer: Microsemi Corporation
Series: POWER MOS 7®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 28500pF @ 25V
FET Feature: -
Power Dissipation (Max): 3250W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP6
Package / Case: Module
APT12067B2LLG
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1200V 18A T-MAX
In Stock668

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Manufacturer: Microsemi Corporation
Series: POWER MOS 7®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 670mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 25V
FET Feature: -
Power Dissipation (Max): 565W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: T-MAX™ [B2]
Package / Case: TO-247-3 Variant
APT12067JLL
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1200V 17A SOT227
In Stock624

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Manufacturer: Microsemi Corporation
Series: POWER MOS 7®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V
FET Feature: -
Power Dissipation (Max): 460W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
APT53N60SC6
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 53A D3PAK
In Stock322

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Manufacturer: Microsemi Corporation
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
FET Feature: Super Junction
Power Dissipation (Max): 417W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3Pak
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
APT12057JLL
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1200V 19A SOT227
In Stock408

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Manufacturer: Microsemi Corporation
Series: POWER MOS 7®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
APT14M100S
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1000V 14A D3PAK
In Stock234

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Manufacturer: Microsemi Corporation
Series: POWER MOS 8™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 880mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 25V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3Pak
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
APT18M80S
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V 19A D3PAK
In Stock273

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Manufacturer: Microsemi Corporation
Series: POWER MOS 8™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 530mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3760pF @ 25V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3Pak
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
APTML20UM18R010T1AG
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 109A SP1
In Stock284

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Manufacturer: Microsemi Corporation
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 19mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 9880pF @ 25V
FET Feature: -
Power Dissipation (Max): 480W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
APTC90SKM60CT1G
Microsemi

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 900V 59A SP1
In Stock486

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Manufacturer: Microsemi Corporation
Series: CoolMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 462W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1