FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 740/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPB25N06S3L-22	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 25A D2PAK	In Stock416 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 25A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 21.3mOhm @ 17A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB77N06S3-09	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 77A D2PAK	In Stock325 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 77A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 8.8mOhm @ 39A, 10V	Vgs(th) (Max) @ Id: 4V @ 55µA	Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5335pF @ 25V	FET Feature: -	Power Dissipation (Max): 107W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB80N06S3-07	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 80A D2PAK	In Stock525 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 6.5mOhm @ 51A, 10V	Vgs(th) (Max) @ Id: 4V @ 80µA	Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7768pF @ 25V	FET Feature: -	Power Dissipation (Max): 135W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPBH6N03LA	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 50A D2PAK	In Stock378 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.2mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 30µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 15V	FET Feature: -	Power Dissipation (Max): 71W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPD05N03LB G	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 90A DPAK	In Stock332 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 90A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.8mOhm @ 60A, 10V	Vgs(th) (Max) @ Id: 2V @ 40µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V	FET Feature: -	Power Dissipation (Max): 94W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPD09N03LB G	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A DPAK	In Stock412 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V	FET Feature: -	Power Dissipation (Max): 58W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPD10N03LA	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 30A DPAK	In Stock524 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10.4mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V	FET Feature: -	Power Dissipation (Max): 52W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPD10N03LA G	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 30A DPAK	In Stock444 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10.4mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V	FET Feature: -	Power Dissipation (Max): 52W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPD20N03L	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 30A DPAK	In Stock292 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V	FET Feature: -	Power Dissipation (Max): 60W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPD20N03L G	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 30A DPAK	In Stock328 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 20mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 695pF @ 25V	FET Feature: -	Power Dissipation (Max): 42W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPD230N06NGBTMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 30A DPAK	In Stock367 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 4V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPDH5N03LA G	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 50A DPAK	In Stock425 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 35µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V	FET Feature: -	Power Dissipation (Max): 83W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPF04N03LA	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 50A DPAK	In Stock597 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 30µA	Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5199pF @ 15V	FET Feature: -	Power Dissipation (Max): 115W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: P-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPF04N03LA G	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 50A DPAK	In Stock241 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 30µA	Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5199pF @ 15V	FET Feature: -	Power Dissipation (Max): 115W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: P-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPF06N03LA G	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 50A DPAK	In Stock224 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2V @ 40µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V	FET Feature: -	Power Dissipation (Max): 83W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: P-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPF09N03LA	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 50A DPAK	In Stock293 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8.6mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1642pF @ 15V	FET Feature: -	Power Dissipation (Max): 63W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: P-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPF09N03LA G	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 50A DPAK	In Stock514 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8.6mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1642pF @ 15V	FET Feature: -	Power Dissipation (Max): 63W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: P-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPF10N03LA	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 30A DPAK	In Stock513 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10.4mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V	FET Feature: -	Power Dissipation (Max): 52W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: P-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPF10N03LA G	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 30A DPAK	In Stock405 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10.4mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V	FET Feature: -	Power Dissipation (Max): 52W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: P-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPFH6N03LA G	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 50A DPAK	In Stock408 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.2mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 30µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 15V	FET Feature: -	Power Dissipation (Max): 71W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: P-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPI03N03LA	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 80A I2PAK	In Stock377 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3mOhm @ 55A, 10V	Vgs(th) (Max) @ Id: 2V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 57nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7027pF @ 15V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IPI05N03LA	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 80A I2PAK	In Stock328 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V	Vgs(th) (Max) @ Id: 2V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 15V	FET Feature: -	Power Dissipation (Max): 94W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IPI06N03LA	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 50A I2PAK	In Stock202 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2V @ 40µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V	FET Feature: -	Power Dissipation (Max): 83W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IPI09N03LA	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 50A I2PAK	In Stock484 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1642pF @ 15V	FET Feature: -	Power Dissipation (Max): 63W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IPI100N06S3-03	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 100A I2PAK	In Stock355 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 4V @ 230µA	Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 21620pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IPI100N06S3-04	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 100A TO-262	In Stock150 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 4V @ 150µA	Gate Charge (Qg) (Max) @ Vgs: 314nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 14230pF @ 25V	FET Feature: -	Power Dissipation (Max): 214W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IPI100N06S3L-03	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 100A TO-262	In Stock434 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 230µA	Gate Charge (Qg) (Max) @ Vgs: 550nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 26240pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IPI11N03LA	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 30A I2PAK	In Stock153 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V	FET Feature: -	Power Dissipation (Max): 52W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IPI14N03LA	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 30A I2PAK	In Stock498 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 13.9mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 15V	FET Feature: -	Power Dissipation (Max): 46W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IPI25N06S3-25	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 25A TO-262	In Stock556 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 25A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 25.1mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 4V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1862pF @ 25V	FET Feature: -	Power Dissipation (Max): 48W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA