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IPD09N03LB G


Part Number IPD09N03LB G
Zouser Part # IPD09N03LB-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 50A DPAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPD09N03LB G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock412 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

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IPD09N03LB G Specifications

Part Number IPD09N03LB G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 15V
FET Feature -
Power Dissipation (Max) 58W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD09N03LB G Documents

IPD09N03LB G, IPD09N03LB G Datasheet (Total Pages: 12, Size: 629.35 KB)
IPU09N03LB G Datasheet CoverIPU09N03LB G Datasheet Page 2IPU09N03LB G Datasheet Page 3IPU09N03LB G Datasheet Page 4IPU09N03LB G Datasheet Page 5IPU09N03LB G Datasheet Page 6IPU09N03LB G Datasheet Page 7IPU09N03LB G Datasheet Page 8IPU09N03LB G Datasheet Page 9IPU09N03LB G Datasheet Page 10IPU09N03LB G Datasheet Page 11IPU09N03LB G Datasheet Page 12

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