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IPI100N06S3-04


Part Number IPI100N06S3-04
Zouser Part # IPI100N06S3-04
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 55V 100A TO-262
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPI100N06S3-04 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock150 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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IPI100N06S3-04 Specifications

Part Number IPI100N06S3-04
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 314nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14230pF @ 25V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

IPI100N06S3-04 Documents

IPI100N06S3-04, IPI100N06S3-04 Datasheet (Total Pages: 9, Size: 197.28 KB)
IPB100N06S3-04 Datasheet CoverIPB100N06S3-04 Datasheet Page 2IPB100N06S3-04 Datasheet Page 3IPB100N06S3-04 Datasheet Page 4IPB100N06S3-04 Datasheet Page 5IPB100N06S3-04 Datasheet Page 6IPB100N06S3-04 Datasheet Page 7IPB100N06S3-04 Datasheet Page 8IPB100N06S3-04 Datasheet Page 9

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