FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 696/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
ZVN4306AVSTOA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 1.1A TO92-3	In Stock273 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 850mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN4306AVSTOB	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 1.1A TO92-3	In Stock593 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 850mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN4306AVSTZ	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 1.1A TO92-3	In Stock512 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 850mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN4306GTC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2.1A SOT223	In Stock473 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 3W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
ZVN4306GVTC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2.1A SOT223	In Stock522 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 3W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
ZVN4310ASTOB	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 0.9A TO92-3	In Stock387 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 850mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN4310ASTZ	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 0.9A TO92-3	In Stock207 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 850mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN4310GTC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 1.67A SOT223	In Stock586 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 1.67A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 540mOhm @ 3.3A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 3W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
ZVN4424ASTOA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 240V 0.26A TO92-3	In Stock496 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 240V	Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V	Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 1.8V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±40V	Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V	FET Feature: -	Power Dissipation (Max): 750mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN4424ASTOB	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 240V 0.26A TO92-3	In Stock650 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 240V	Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V	Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 1.8V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±40V	Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V	FET Feature: -	Power Dissipation (Max): 750mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN4424GTC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 240V 0.5A SOT223	In Stock519 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 240V	Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V	Rds On (Max) @ Id, Vgs: 5.5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 1.8V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±40V	Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
ZVN4525E6TC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 0.23A SOT23-6	In Stock196 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V	Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 1.8V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 3.65nC @ 10V	Vgs (Max): ±40V	Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-6	Package / Case: SOT-23-6
ZVN4525GTC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 0.31A SOT223	In Stock219 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V	Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 1.8V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 3.65nC @ 10V	Vgs (Max): ±40V	Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 25V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
ZVNL110ASTOA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 320MA TO92-3	In Stock453 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 1.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVNL110ASTOB	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 320MA TO92-3	In Stock450 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 1.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVNL110GTC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 600MA SOT223	In Stock283 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 1.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
ZVNL120ASTOA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 0.18A TO92-3	In Stock370 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 3V, 5V	Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V	Vgs(th) (Max) @ Id: 1.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVNL120ASTOB	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 0.18A TO92-3	In Stock479 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 3V, 5V	Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V	Vgs(th) (Max) @ Id: 1.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVNL120C	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 0.18A TO92-3	In Stock279 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 3V, 5V	Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V	Vgs(th) (Max) @ Id: 1.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-92-3	Package / Case: TO-226-3, TO-92-3 (TO-226AA)
ZVNL120CSTOA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 0.18A TO92-3	In Stock413 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 3V, 5V	Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V	Vgs(th) (Max) @ Id: 1.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVNL120CSTOB	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 0.18A TO92-3	In Stock332 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 3V, 5V	Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V	Vgs(th) (Max) @ Id: 1.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVNL120CSTZ	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 0.18A TO92-3	In Stock606 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 3V, 5V	Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V	Vgs(th) (Max) @ Id: 1.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVNL120GTC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 0.32A SOT223	In Stock620 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 3V, 5V	Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 5V	Vgs(th) (Max) @ Id: 1.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
ZVP0120AS	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 0.11A TO92-3	In Stock478 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 110mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 32Ohm @ 125mA, 10V	Vgs(th) (Max) @ Id: 3.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-92-3	Package / Case: TO-226-3, TO-92-3 (TO-226AA)
ZVP0120ASTOA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 0.11A TO92-3	In Stock405 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 110mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 32Ohm @ 125mA, 10V	Vgs(th) (Max) @ Id: 3.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVP0120ASTOB	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 0.11A TO92-3	In Stock245 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 110mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 32Ohm @ 125mA, 10V	Vgs(th) (Max) @ Id: 3.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVP0120ASTZ	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 0.11A TO92-3	In Stock379 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 110mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 32Ohm @ 125mA, 10V	Vgs(th) (Max) @ Id: 3.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVP0545ASTOA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 450V 0.045A TO92-3	In Stock542 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 450V	Current - Continuous Drain (Id) @ 25°C: 45mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVP0545ASTOB	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 450V 0.045A TO92-3	In Stock409 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 450V	Current - Continuous Drain (Id) @ 25°C: 45mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVP0545GTC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 450V 0.075A SOT223	In Stock323 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 450V	Current - Continuous Drain (Id) @ 25°C: 75mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA