FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 699/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
MIC94050BM4 TR	Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 6V 1.8A SOT-143	In Stock264 More on Order	Manufacturer: Microchip Technology	Series: SymFET™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 6V	Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 160mOhm @ 100mA, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): 6V	Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V	FET Feature: -	Power Dissipation (Max): 568mW (Ta)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-143	Package / Case: TO-253-4, TO-253AA
MIC94051BM4 TR	Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 6V 1.8A 8MSOP	In Stock450 More on Order	Manufacturer: Microchip Technology	Series: SymFET™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 6V	Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 160mOhm @ 100mA, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): 6V	Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V	FET Feature: -	Power Dissipation (Max): 568mW (Ta)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-143	Package / Case: TO-253-4, TO-253AA
MIC94052BC6-TR	Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 6V 2A SC70-6	In Stock525 More on Order	Manufacturer: Microchip Technology	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 6V	Current - Continuous Drain (Id) @ 25°C: 2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 84mOhm @ 100mA, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): 6V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 270mW (Ta)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-70-6	Package / Case: 6-TSSOP, SC-88, SOT-363
MIC94053BC6-TR	Microchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 6V 2A SC70-6	In Stock296 More on Order	Manufacturer: Microchip Technology	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 6V	Current - Continuous Drain (Id) @ 25°C: 2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 84mOhm @ 100mA, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): 6V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 270mW (Ta)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SC-70-6	Package / Case: 6-TSSOP, SC-88, SOT-363
FQPF18N50V2	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 18A TO-220F	In Stock590 More on Order	Manufacturer: ON Semiconductor	Series: QFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 18A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V	FET Feature: -	Power Dissipation (Max): 69W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220F	Package / Case: TO-220-3 Full Pack
FDMS8690	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 14A POWER56	In Stock337 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 27A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 37.8W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-MLP (5x6), Power56	Package / Case: 8-PowerWDFN
STE45NK80ZD	STMicroelectronics	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 45A ISOTOP	In Stock236 More on Order	Manufacturer: STMicroelectronics	Series: SuperFREDmesh™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 45A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 130mOhm @ 22.5A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 150µA	Gate Charge (Qg) (Max) @ Vgs: 781nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 26000pF @ 25V	FET Feature: -	Power Dissipation (Max): 600W (Tc)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: ISOTOP®	Package / Case: ISOTOP
FQA11N90C	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 11A TO-3P	In Stock469 More on Order	Manufacturer: ON Semiconductor	Series: QFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 11A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
BSL307SPT	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 5.5A 6-TSOP	In Stock544 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V	Vgs(th) (Max) @ Id: 2V @ 40µA	Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 25V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TSOP-6-6	Package / Case: SOT-23-6 Thin, TSOT-23-6
IPB09N03LAT	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 50A D2PAK	In Stock354 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1642pF @ 15V	FET Feature: -	Power Dissipation (Max): 63W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB14N03LAT	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 30A D2PAK	In Stock370 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 13.6mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 15V	FET Feature: -	Power Dissipation (Max): 46W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB100N03S2L03T	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A D2PAK	In Stock327 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB21N10T	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 21A D2PAK	In Stock455 More on Order	Manufacturer: Infineon Technologies	Series: SIPMOS®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 21A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 4V @ 44µA	Gate Charge (Qg) (Max) @ Vgs: 38.4nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V	FET Feature: -	Power Dissipation (Max): 90W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB35N10T	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 35A D2PAK	In Stock632 More on Order	Manufacturer: Infineon Technologies	Series: SIPMOS®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 35A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V	Vgs(th) (Max) @ Id: 4V @ 83µA	Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB42N03S2L13T	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 42A D2PAK	In Stock482 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 42A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 12.6mOhm @ 21A, 10V	Vgs(th) (Max) @ Id: 2V @ 37µA	Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 25V	FET Feature: -	Power Dissipation (Max): 83W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB73N03S2L08T	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 73A D2PAK	In Stock295 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 73A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8.1mOhm @ 36A, 10V	Vgs(th) (Max) @ Id: 2V @ 55µA	Gate Charge (Qg) (Max) @ Vgs: 46.2nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V	FET Feature: -	Power Dissipation (Max): 107W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB80N03S2L05T	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A D2PAK	In Stock579 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V	Vgs(th) (Max) @ Id: 2V @ 110µA	Gate Charge (Qg) (Max) @ Vgs: 89.7nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 25V	FET Feature: -	Power Dissipation (Max): 167W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPB80N03S2L06T	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A D2PAK	In Stock465 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.9mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 2V @ 80µA	Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPD100N03S2L04T	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A DPAK	In Stock420 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 89.7nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-5	Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
SPD30N03S2L07T	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 30A DPAK	In Stock251 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2V @ 85µA	Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V	FET Feature: -	Power Dissipation (Max): 136W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
SPD30N03S2L10T	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 30A DPAK	In Stock599 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 41.8nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
SPI100N03S2L03	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TO-262	In Stock487 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO262-3-1	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
SPP100N03S203	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TO-220AB	In Stock443 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220-3-1	Package / Case: TO-220-3
SPP100N03S2L03	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TO-220AB	In Stock484 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220-3-1	Package / Case: TO-220-3
FDV301N_D87Z	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 0.22A SOT-23	In Stock231 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V	Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V	Vgs(th) (Max) @ Id: 1.06V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V	Vgs (Max): 8V	Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V	FET Feature: -	Power Dissipation (Max): 350mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
FDV302P_D87Z	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 25V 0.12A SOT-23	In Stock206 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V	Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V	Vgs (Max): -8V	Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V	FET Feature: -	Power Dissipation (Max): 350mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
FDV304P-D87Z	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 25V 0.46A SOT-23	In Stock488 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V	Rds On (Max) @ Id, Vgs: 1.1Ohm @ 500mA, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V	Vgs (Max): -8V	Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V	FET Feature: -	Power Dissipation (Max): 350mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23	Package / Case: TO-236-3, SC-59, SOT-23-3
IRFNL210BTA-FP001	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 1A TO-92L	In Stock554 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 1A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-92L	Package / Case: TO-226-3, TO-92-3 Long Body
SI3442DV	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 4.1A SSOT-6	In Stock474 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V	Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V	Vgs (Max): 8V	Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.6W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SuperSOT™-6	Package / Case: SOT-23-6 Thin, TSOT-23-6
FQNL1N50BBU	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 0.27A TO-92L	In Stock372 More on Order	Manufacturer: ON Semiconductor	Series: QFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 270mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 9Ohm @ 135mA, 10V	Vgs(th) (Max) @ Id: 3.7V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-92-3	Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)