FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 695/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
ZVN2106GTC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.71A SOT223	In Stock456 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 710mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 18V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
ZVN2110ASTOA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 320MA TO92-3	In Stock314 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN2110ASTOB	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 320MA TO92-3	In Stock328 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN2110GTC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 500MA SOT223	In Stock415 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
ZVN2120A	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 0.18A TO92-3	In Stock363 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-92-3	Package / Case: TO-226-3, TO-92-3 (TO-226AA)
ZVN2120ASTOA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 0.18A TO92-3	In Stock478 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN2120ASTOB	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 0.18A TO92-3	In Stock471 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN2120ASTZ	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 0.18A TO92-3	In Stock557 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN2120GTC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 0.32A SOT223	In Stock322 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
ZVN2535ASTOA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 350V 0.09A TO92-3	In Stock282 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 350V	Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 35Ohm @ 100mA, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN2535ASTOB	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 350V 0.09A TO92-3	In Stock582 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 350V	Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 35Ohm @ 100mA, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN2535ASTZ	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 350V 0.09A TO92-3	In Stock382 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 350V	Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 35Ohm @ 100mA, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN3306ASTOA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.27A TO92-3	In Stock565 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 18V	FET Feature: -	Power Dissipation (Max): 625mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN3306ASTOB	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.27A TO92-3	In Stock445 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 18V	FET Feature: -	Power Dissipation (Max): 625mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN3306FTC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.15A SOT23-3	In Stock597 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 18V	FET Feature: -	Power Dissipation (Max): 330mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3	Package / Case: TO-236-3, SC-59, SOT-23-3
ZVN3310ASTOA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 200MA TO92-3	In Stock367 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V	FET Feature: -	Power Dissipation (Max): 625mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN3310FTC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100MA SOT23-3	In Stock495 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V	FET Feature: -	Power Dissipation (Max): 330mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3	Package / Case: TO-236-3, SC-59, SOT-23-3
ZVN3320ASTOB	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 0.1A TO92-3	In Stock227 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V	FET Feature: -	Power Dissipation (Max): 625mW (Ta)	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN3320ASTZ	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 0.1A TO92-3	In Stock251 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V	FET Feature: -	Power Dissipation (Max): 625mW (Ta)	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN3320FTC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 0.06A SOT23-3	In Stock394 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 60mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V	FET Feature: -	Power Dissipation (Max): 330mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3	Package / Case: TO-236-3, SC-59, SOT-23-3
ZVN4106FTC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.2A SOT23-3	In Stock359 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V	FET Feature: -	Power Dissipation (Max): 350mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3	Package / Case: TO-236-3, SC-59, SOT-23-3
ZVN4206ASTOA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.6A TO92-3	In Stock331 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN4206ASTOB	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.6A TO92-3	In Stock390 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN4206AVSTOB	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.6A TO92-3	In Stock353 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN4206GVTC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 1A SOT223	In Stock483 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
ZVN4210ASTOB	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 450MA TO92-3	In Stock565 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN4210GTC	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 800MA SOT223	In Stock458 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
ZVN4306ASTOA	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 1.1A TO92-3	In Stock463 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 850mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN4306ASTOB	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 1.1A TO92-3	In Stock300 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 850mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3
ZVN4306ASTZ	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 1.1A TO92-3	In Stock232 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 330mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 850mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: E-Line (TO-92 compatible)	Package / Case: E-Line-3