FETs, MOSFETs - Single

Manufacturer

Reset

Series

Reset

FET Type

Reset

Technology

Reset

Drain to Source Voltage (Vdss)

Reset

Current - Continuous Drain (Id) @ 25°C

Reset

Drive Voltage (Max Rds On, Min Rds On)

Reset

Rds On (Max) @ Id, Vgs

Reset

Vgs(th) (Max) @ Id

Reset

Gate Charge (Qg) (Max) @ Vgs

Reset

Vgs (Max)

Reset

Input Capacitance (Ciss) (Max) @ Vds

Reset

FET Feature

Reset

Power Dissipation (Max)

Reset

Operating Temperature

Reset

Mounting Type

Reset

Supplier Device Package

Reset

Package / Case

Reset

Show Filters

Reset Filters

Apply Filters

CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 631/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFR5305TRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 55V 31A DPAK	In Stock279 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 31A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR5305TRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 55V 31A DPAK	In Stock330 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 31A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR5505TRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 55V 18A DPAK	In Stock189 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 18A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V	FET Feature: -	Power Dissipation (Max): 57W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR5505TRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 55V 18A DPAK	In Stock390 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 18A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V	FET Feature: -	Power Dissipation (Max): 57W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR6215TRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 150V 13A DPAK	In Stock181 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR6215TR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 150V 13A DPAK	In Stock334 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR6215TRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 150V 13A DPAK	In Stock292 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9010TRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 5.3A DPAK	In Stock426 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V	FET Feature: -	Power Dissipation (Max): 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9010TRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 5.3A DPAK	In Stock317 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V	FET Feature: -	Power Dissipation (Max): 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9014N	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 5.1A DPAK	In Stock415 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 25W (Tc)	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9014NTRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 5.1A DPAK	In Stock501 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9014NTR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 5.1A DPAK	In Stock173 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9014NTRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 5.1A DPAK	In Stock469 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9014TRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 5.1A DPAK	In Stock535 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9020TRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 9.9A DPAK	In Stock292 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 280mOhm @ 5.7A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V	FET Feature: -	Power Dissipation (Max): 42W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9020TRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 9.9A DPAK	In Stock436 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 280mOhm @ 5.7A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V	FET Feature: -	Power Dissipation (Max): 42W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9024NTRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 55V 11A DPAK	In Stock302 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 11A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 38W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9024NTRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 55V 11A DPAK	In Stock139 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 11A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 38W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9024TRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 8.8A DPAK	In Stock276 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 42W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9024TRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 8.8A DPAK	In Stock347 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 42W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9110TRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 3.1A DPAK	In Stock128 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9120NTRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 6.6A DPAK	In Stock507 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 40W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9120NTRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 6.6A DPAK	In Stock580 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 40W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9120TRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 5.6A DPAK	In Stock404 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 42W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9210TRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 1.9A DPAK	In Stock284 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9210TRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 1.9A DPAK	In Stock370 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9214TRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 2.7A DPAK	In Stock575 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9214TR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 2.7A DPAK	In Stock520 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9214TRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 2.7A DPAK	In Stock472 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR9220TRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 3.6A DPAK	In Stock515 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 42W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63