FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 629/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFI9610G	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 2A TO220FP	In Stock263 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1.2A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V	FET Feature: -	Power Dissipation (Max): 27W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3 Full Pack, Isolated Tab
IRFI9Z14G	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 5.3A TO220FP	In Stock180 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 3.2A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V	FET Feature: -	Power Dissipation (Max): 27W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3 Full Pack, Isolated Tab
IRFI9Z24N	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 55V 9.5A TO-220FP	In Stock497 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 175mOhm @ 5.4A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 29W (Tc)	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-220AB Full-Pak	Package / Case: TO-220-3 Full Pack
IRFI9Z34N	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 55V 14A TO-220FP	In Stock359 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 14A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V	FET Feature: -	Power Dissipation (Max): 37W (Tc)	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-220AB Full-Pak	Package / Case: TO-220-3 Full Pack
IRFIBG20G	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V TO-220FP	In Stock367 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3 Full Pack, Isolated Tab
IRFIZ44G	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 30A TO220FP	In Stock345 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V	FET Feature: -	Power Dissipation (Max): 48W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3 Full Pack, Isolated Tab
IRFL024NTR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 2.8A SOT223	In Stock209 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
IRFL1006TR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 1.6A SOT223	In Stock405 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
IRFL214TR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 790MA SOT223	In Stock559 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 790mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2Ohm @ 470mA, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V	FET Feature: -	Power Dissipation (Max): 2W (Ta), 3.1W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
IRFL31N20D	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 31A D2PAK	In Stock488 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 31A (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFPC50LC	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A TO-247AC	In Stock481 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 11A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 600mOhm @ 6.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V	FET Feature: -	Power Dissipation (Max): 190W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
IRFR010	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 8.2A DPAK	In Stock205 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V	FET Feature: -	Power Dissipation (Max): 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR010TRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 8.2A DPAK	In Stock364 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V	FET Feature: -	Power Dissipation (Max): 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR010TR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 8.2A DPAK	In Stock459 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V	FET Feature: -	Power Dissipation (Max): 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR010TRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 8.2A DPAK	In Stock526 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V	FET Feature: -	Power Dissipation (Max): 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR014TRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 7.7A DPAK	In Stock252 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR014TRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 7.7A DPAK	In Stock272 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR020TRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 14A DPAK	In Stock439 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 14A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 42W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR024NTRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 17A DPAK	In Stock575 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 17A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 75mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V	FET Feature: -	Power Dissipation (Max): 45W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR024TRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 14A DPAK	In Stock316 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 14A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 42W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR024TRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 14A DPAK	In Stock338 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 14A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 42W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR110TRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 4.3A DPAK	In Stock452 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR110TRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 4.3A DPAK	In Stock541 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR11N25D	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V DPAK	In Stock449 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR1205TRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 44A DPAK	In Stock386 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 44A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V	FET Feature: -	Power Dissipation (Max): 107W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR1205TRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 44A DPAK	In Stock502 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 44A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V	FET Feature: -	Power Dissipation (Max): 107W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR120TRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 7.7A DPAK	In Stock453 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 42W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR13N20DTRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 13A DPAK	In Stock564 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR13N20DTR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 13A DPAK	In Stock567 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR13N20DTRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 13A DPAK	In Stock451 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63