FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 634/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRL3103D2S	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 54A D2PAK	In Stock608 More on Order	Manufacturer: Infineon Technologies	Series: FETKY™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 54A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 14mOhm @ 32A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3103D2STRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 54A D2PAK	In Stock439 More on Order	Manufacturer: Infineon Technologies	Series: FETKY™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 54A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 14mOhm @ 32A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3103STRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A D2PAK	In Stock217 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 64A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V	FET Feature: -	Power Dissipation (Max): 94W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3202L	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 48A TO-262	In Stock468 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 48A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V	Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 7V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V	FET Feature: -	Power Dissipation (Max): 69W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IRL3202STRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 48A D2PAK	In Stock407 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 48A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V	Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 7V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V	FET Feature: -	Power Dissipation (Max): 69W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3302L	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 39A TO-262	In Stock425 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 39A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V	Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V	FET Feature: -	Power Dissipation (Max): 57W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IRL3302STRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 39A D2PAK	In Stock383 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 39A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V	Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V	FET Feature: -	Power Dissipation (Max): 57W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3302STRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 39A D2PAK	In Stock328 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 39A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V	Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V	FET Feature: -	Power Dissipation (Max): 57W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3303D1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 38A TO-220AB	In Stock245 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 38A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V	FET Feature: -	Power Dissipation (Max): 68W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IRL3303D1S	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 38A D2PAK	In Stock422 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 38A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V	FET Feature: -	Power Dissipation (Max): 68W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3303D1STRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 38A D2PAK	In Stock360 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 38A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V	FET Feature: -	Power Dissipation (Max): 68W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3303D1STRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 38A D2PAK	In Stock480 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 38A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V	FET Feature: -	Power Dissipation (Max): 68W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3303STRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 38A D2PAK	In Stock513 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 38A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 68W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3303STRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 38A D2PAK	In Stock431 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 38A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 68W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3402L	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 85A TO-262	In Stock503 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 85A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V	Rds On (Max) @ Id, Vgs: 8mOhm @ 51A, 7V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 78nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 15V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IRL3402STRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 85A D2PAK	In Stock222 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 85A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V	Rds On (Max) @ Id, Vgs: 8mOhm @ 51A, 7V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 78nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 15V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3402STRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 85A D2PAK	In Stock206 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 85A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V	Rds On (Max) @ Id, Vgs: 8mOhm @ 51A, 7V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 78nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 15V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3502L	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 110A TO-262	In Stock317 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 110A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V	Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V	FET Feature: -	Power Dissipation (Max): 140W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IRL3502STRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 110A D2PAK	In Stock358 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 110A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V	Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V	FET Feature: -	Power Dissipation (Max): 140W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3705NSTRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 89A D2PAK	In Stock531 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 89A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 98nC @ 5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 170W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3803STRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 140A D2PAK	In Stock489 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 140A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 200W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL510L	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 5.6A TO-262	In Stock403 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IRL510STRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 5.6A D2PAK	In Stock380 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 43W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL510STRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 5.6A D2PAK	In Stock571 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 43W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL520L	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 9.2A TO-262	In Stock355 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V	FET Feature: -	Power Dissipation (Max): 60W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IRL520NSTRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 10A D2PAK	In Stock406 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 10A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 48W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL520S	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 9.2A D2PAK	In Stock474 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 60W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL520STRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 9.2A D2PAK	In Stock323 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 60W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL520STRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 9.2A D2PAK	In Stock213 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 60W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL530L	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 15A TO-262	In Stock480 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA