FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 626/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7811TR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 28V 14A 8-SOIC	In Stock515 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 28V	Current - Continuous Drain (Id) @ 25°C: 14A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V	Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 16V	FET Feature: -	Power Dissipation (Max): 3.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF820ASTRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A D2PAK	In Stock179 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF820ASTRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A D2PAK	In Stock514 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF820L	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A TO-262	In Stock283 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IRF820STRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A D2PAK	In Stock336 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF820STRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A D2PAK	In Stock385 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF830ASTRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 5A D2PAK	In Stock408 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 74W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF830L	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 4.5A TO-262	In Stock342 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 74W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IRF830STRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 4.5A D2PAK	In Stock619 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 74W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF830STRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 4.5A D2PAK	In Stock532 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 74W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF840AL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 8A TO-262	In Stock324 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1018pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IRF840ASTRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 8A D2PAK	In Stock254 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1018pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF840ASTRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 8A D2PAK	In Stock537 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1018pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF840LCSTRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 8A D2PAK	In Stock459 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF840LCSTRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 8A D2PAK	In Stock335 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF840STRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 8A D2PAK	In Stock459 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF840STRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 8A D2PAK	In Stock407 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9410TR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7A 8-SOIC	In Stock344 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF9510L	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 4A TO-262	In Stock355 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IRF9510STRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 4A D2PAK	In Stock546 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 43W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9510STRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 4A D2PAK	In Stock188 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 43W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9520L	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 6.8A TO-262	In Stock326 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IRF9520NSTRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 6.8A D2PAK	In Stock357 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 480mOhm @ 4A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 48W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9520NSTRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 6.8A D2PAK	In Stock290 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 480mOhm @ 4A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 48W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9520STRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 6.8A D2PAK	In Stock466 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 60W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9530L	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 12A TO-262	In Stock528 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IRF9530NSTRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 14A D2PAK	In Stock228 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 14A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 200mOhm @ 8.4A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 79W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9530STRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 12A D2PAK	In Stock416 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 88W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF9540L	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 19A TO-262	In Stock472 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 19A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IRF9540NSTRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 23A D2PAK	In Stock694 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 23A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 117mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 140W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB