FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 733/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXTP4N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 4A TO-220	In Stock462 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 25V	FET Feature: -	Power Dissipation (Max): 89W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTA4N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 4A D2-PAK	In Stock164 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 25V	FET Feature: -	Power Dissipation (Max): 89W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP5N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 5A TO-220	In Stock327 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2.5A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTA5N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 5A D2-PAK	In Stock389 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2.5A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP7N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7A TO-220	In Stock319 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTI10N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A I2-PAK	In Stock217 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 10A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262 (I2PAK)	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IXTV18N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 18A PLUS220	In Stock427 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 18A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V	FET Feature: -	Power Dissipation (Max): 360W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXTV18N60PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 18A PLUS220-SMD	In Stock303 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 18A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V	FET Feature: -	Power Dissipation (Max): 360W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXTV22N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 22A PLUS220	In Stock330 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 22A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXTV22N60PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 22A PLUS220-SMD	In Stock289 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 22A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXTV26N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 26A PLUS220	In Stock154 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V	FET Feature: -	Power Dissipation (Max): 460W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXTV26N60PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 26A PLUS220-SMD	In Stock374 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V	FET Feature: -	Power Dissipation (Max): 460W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXTV30N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A PLUS220	In Stock188 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 25V	FET Feature: -	Power Dissipation (Max): 540W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXTV30N60PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 30A PLUS220-SMD	In Stock288 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 25V	FET Feature: -	Power Dissipation (Max): 540W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXFC16N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 10A ISOPLUS220	In Stock251 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 10A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 450mOhm @ 8A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V	FET Feature: -	Power Dissipation (Max): 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS220™	Package / Case: ISOPLUS220™
IXFV22N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 22A PLUS220	In Stock151 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 22A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V	FET Feature: -	Power Dissipation (Max): 350W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXFV22N50PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 22A PLUS220-SMD	In Stock400 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 22A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V	FET Feature: -	Power Dissipation (Max): 350W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXFV26N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 26A PLUS220	In Stock512 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXFV26N50PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 26A PLUS220-SMD	In Stock313 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXFC26N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 15A ISOPLUS220	In Stock251 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 260mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 130W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS220™	Package / Case: ISOPLUS220™
IXFV30N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 30A PLUS220	In Stock220 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V	FET Feature: -	Power Dissipation (Max): 460W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXFV30N50PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 30A PLUS220-SMD	In Stock456 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V	FET Feature: -	Power Dissipation (Max): 460W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXFV36N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 36A PLUS220	In Stock363 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarP2™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 36A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V	FET Feature: -	Power Dissipation (Max): 540W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXFV36N50PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 36A PLUS220-SMD	In Stock620 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarP2™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 36A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V	FET Feature: -	Power Dissipation (Max): 540W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXFC36N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 19A ISOPLUS220	In Stock466 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 19A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V	FET Feature: -	Power Dissipation (Max): 156W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS220™	Package / Case: ISOPLUS220™
IXFC14N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 8A ISOPLUS220	In Stock422 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 630mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V	FET Feature: -	Power Dissipation (Max): 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS220™	Package / Case: ISOPLUS220™
IXFV18N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 18A PLUS220	In Stock298 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 18A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5.5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V	FET Feature: -	Power Dissipation (Max): 360W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXFV18N60PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 18A PLUS220-SMD	In Stock340 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 18A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5.5V @ 2.5mA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V	FET Feature: -	Power Dissipation (Max): 360W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXFV22N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 22A PLUS220	In Stock467 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 22A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXFV22N60PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 22A PLUS220-SMD	In Stock240 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 22A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD