FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 732/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXTY1R6N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 1.6A DPAK	In Stock434 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 6.5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5.5V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V	FET Feature: -	Power Dissipation (Max): 43W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IXTP1R6N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 1.6A TO-220	In Stock327 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 6.5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5.5V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V	FET Feature: -	Power Dissipation (Max): 43W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTY2R4N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.4A DPAK	In Stock338 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.75Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5.5V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V	FET Feature: -	Power Dissipation (Max): 55W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IXTP2R4N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.4A TO-220	In Stock334 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.75Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5.5V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V	FET Feature: -	Power Dissipation (Max): 55W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTY3N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 3.6A DPAK	In Stock217 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2Ohm @ 1.8A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 409pF @ 25V	FET Feature: -	Power Dissipation (Max): 70W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252AA	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IXTP3N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 3.6A TO-220	In Stock325 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2Ohm @ 1.8A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 409pF @ 25V	FET Feature: -	Power Dissipation (Max): 70W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTA3N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 3.6A D2PAK	In Stock411 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2Ohm @ 1.8A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 409pF @ 25V	FET Feature: -	Power Dissipation (Max): 70W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP5N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 4.8A TO-220	In Stock298 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.4A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V	FET Feature: -	Power Dissipation (Max): 89W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTA5N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 4.8A D2PAK	In Stock364 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.4A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V	FET Feature: -	Power Dissipation (Max): 89W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP6N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 6A TO-220	In Stock599 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3A, 10V	Vgs(th) (Max) @ Id: 5V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTA6N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 6A D2-PAK	In Stock415 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3A, 10V	Vgs(th) (Max) @ Id: 5V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP8N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 8A TO-220	In Stock194 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTA8PN50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 8A D2-PAK	In Stock229 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTI12N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 12A I2-PAK	In Stock560 More on Order	Manufacturer: IXYS	Series: Polar™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262 (I2PAK)	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IXTV22N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 22A PLUS220	In Stock381 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 22A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V	FET Feature: -	Power Dissipation (Max): 350W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXTV22N50PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 22A PLUS220-SMD	In Stock310 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 22A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V	FET Feature: -	Power Dissipation (Max): 350W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXTV26N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 26A PLUS220	In Stock552 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 460W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXTV26N50PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 26A PLUS220-SMD	In Stock157 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 460W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXTC26N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 15A ISOPLUS220	In Stock338 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 260mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 130W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS220™	Package / Case: ISOPLUS220™
IXTV30N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 30A PLUS220	In Stock173 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V	FET Feature: -	Power Dissipation (Max): 460W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXTV30N50PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 30A PLUS220-SMD	In Stock521 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V	FET Feature: -	Power Dissipation (Max): 460W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXTV36N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 36A PLUS220	In Stock532 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 36A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V	FET Feature: -	Power Dissipation (Max): 540W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXTV36N50PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 36A PLUS220-SMD	In Stock434 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 36A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V	FET Feature: -	Power Dissipation (Max): 540W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXTY1R4N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 1.4A D-PAK	In Stock243 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 9Ohm @ 700mA, 10V	Vgs(th) (Max) @ Id: 5.5V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IXTP1R4N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 1.4A TO-220	In Stock271 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 9Ohm @ 700mA, 10V	Vgs(th) (Max) @ Id: 5.5V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTY2N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2A D-PAK	In Stock290 More on Order	Manufacturer: IXYS	Series: Polar™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V	FET Feature: -	Power Dissipation (Max): 55W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IXTP2N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2A TO-220	In Stock411 More on Order	Manufacturer: IXYS	Series: Polar™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V	FET Feature: -	Power Dissipation (Max): 55W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTY3N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 3A D-PAK	In Stock544 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5.5V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 411pF @ 25V	FET Feature: -	Power Dissipation (Max): 70W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IXTP3N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 3A TO-220	In Stock135 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5.5V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 411pF @ 25V	FET Feature: -	Power Dissipation (Max): 70W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTA3N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 3A D2-PAK	In Stock355 More on Order	Manufacturer: IXYS	Series: PolarHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5.5V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 411pF @ 25V	FET Feature: -	Power Dissipation (Max): 70W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB