FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 681/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6616	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 19A DIRECTFET	In Stock338 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 106A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5mOhm @ 19A, 10V	Vgs(th) (Max) @ Id: 2.25V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3765pF @ 20V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta), 89W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ MX	Package / Case: DirectFET™ Isometric MX
IRF7832ZTR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 21A 8-SOIC	In Stock552 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 21A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.35V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3860pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF3205ZSTRRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 75A D2PAK	In Stock319 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V	FET Feature: -	Power Dissipation (Max): 170W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF3415STRRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 43A D2PAK	In Stock441 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 43A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 200W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF3711STRRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 110A D2PAK	In Stock614 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 110A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 120W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF3717PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 20A 8-SOIC	In Stock645 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 20A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.45V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF530NSTRRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 17A D2PAK	In Stock632 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 17A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 70W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF630NSTRRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 9.3A D2PAK	In Stock326 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V	FET Feature: -	Power Dissipation (Max): 82W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF644NSTRLPBF	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 14A D2PAK	In Stock597 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 14A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 240mOhm @ 8.4A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF7201PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7.3A 8-SOIC	In Stock333 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 30mOhm @ 7.3A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7204PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5.3A 8-SOIC	In Stock252 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 60mOhm @ 5.3A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7205PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 4.6A 8-SOIC	In Stock350 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 70mOhm @ 4.6A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7207PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5.4A 8-SOIC	In Stock583 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V	Rds On (Max) @ Id, Vgs: 60mOhm @ 5.4A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7233PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 9.5A 8-SOIC	In Stock683 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V	Vgs(th) (Max) @ Id: 600mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7241PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 6.2A 8-SOIC	In Stock503 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 41mOhm @ 6.2A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
AUXHMF7321D2	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 4.7A 8-SOIC	In Stock559 More on Order	Manufacturer: Infineon Technologies	Series: FETKY™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 62mOhm @ 4.9A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7322D1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5.3A 8-SOIC	In Stock327 More on Order	Manufacturer: Infineon Technologies	Series: FETKY™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V	Rds On (Max) @ Id, Vgs: 62mOhm @ 2.9A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7324D1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.2A 8-SOIC	In Stock284 More on Order	Manufacturer: Infineon Technologies	Series: FETKY™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V	Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7353D1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6.5A 8-SOIC	In Stock556 More on Order	Manufacturer: Infineon Technologies	Series: FETKY™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 32mOhm @ 5.8A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7353D2PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6.5A 8-SOIC	In Stock263 More on Order	Manufacturer: Infineon Technologies	Series: FETKY™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7401PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 8.7A 8-SOIC	In Stock595 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V	Rds On (Max) @ Id, Vgs: 22mOhm @ 4.1A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7402PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 6.8A 8-SOIC	In Stock359 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V	Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7403PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.5A 8-SOIC	In Stock518 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7404PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 6.7A 8-SOIC	In Stock458 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V	Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7406PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 5.8A 8-SOIC	In Stock231 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 45mOhm @ 2.8A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7413ZPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13A 8-SOIC	In Stock410 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 13A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 2.25V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7420PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 11.5A 8-SOIC	In Stock547 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 4.5V	Vgs(th) (Max) @ Id: 900mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 3529pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7421D1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.8A 8-SOIC	In Stock344 More on Order	Manufacturer: Infineon Technologies	Series: FETKY™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7422D2PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.3A 8-SOIC	In Stock659 More on Order	Manufacturer: Infineon Technologies	Series: FETKY™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V	Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7424PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 11A 8-SOIC	In Stock425 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4030pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)