FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 678/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRL2203NLPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 116A TO-262	In Stock597 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 116A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 180W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IRL3705NLPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 89A TO-262	In Stock407 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 89A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 98nC @ 5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 170W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IRFB17N60KPBF	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 17A TO-220AB	In Stock379 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 17A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V	FET Feature: -	Power Dissipation (Max): 340W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IRFBA22N50APBF	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 24A SUPER-220	In Stock400 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 24A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 230mOhm @ 13.8A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V	FET Feature: -	Power Dissipation (Max): 340W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: SUPER-220™ (TO-273AA)	Package / Case: Super-220™
IRL3803LPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 140A TO-262	In Stock347 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 140A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 200W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IRLU3714ZPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 37A I-PAK	In Stock221 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 37A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.55V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V	FET Feature: -	Power Dissipation (Max): 35W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I-PAK	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
IRFU3704PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 75A I-PAK	In Stock294 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V	FET Feature: -	Power Dissipation (Max): 90W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: IPAK (TO-251)	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
IRLU3714PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 36A I-PAK	In Stock558 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 36A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V	FET Feature: -	Power Dissipation (Max): 47W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I-PAK	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
IRFU120ZPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 8.7A I-PAK	In Stock413 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V	FET Feature: -	Power Dissipation (Max): 35W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: IPAK (TO-251)	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
IRLU120PBF	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 7.7A I-PAK	In Stock373 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 42W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-251AA	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
IRLU4343PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 26A I-PAK	In Stock422 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 50V	FET Feature: -	Power Dissipation (Max): 79W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I-PAK	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
IRLU7821PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 65A I-PAK	In Stock519 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 65A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V	FET Feature: -	Power Dissipation (Max): 75W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I-PAK	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
IRFU3504ZPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 42A I-PAK	In Stock445 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 42A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V	FET Feature: -	Power Dissipation (Max): 90W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: IPAK (TO-251)	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
IRFU2905ZPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 42A I-PAK	In Stock638 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 42A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V	FET Feature: -	Power Dissipation (Max): 110W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: IPAK (TO-251)	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
IRFU3711PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 100A I-PAK	In Stock176 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 120W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: IPAK (TO-251)	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
IRLU7833PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 140A I-PAK	In Stock444 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 140A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4010pF @ 15V	FET Feature: -	Power Dissipation (Max): 140W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I-PAK	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
IRFU12N25DPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 14A I-PAK	In Stock381 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 14A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 260mOhm @ 8.4A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V	FET Feature: -	Power Dissipation (Max): 144W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: IPAK (TO-251)	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
IRLU3705ZPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 42A I-PAK	In Stock411 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 42A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8mOhm @ 42A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V	FET Feature: -	Power Dissipation (Max): 130W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: IPAK (TO-251)	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
IRFL4315PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 2.6A SOT223	In Stock605 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 185mOhm @ 1.6A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
IRF5803D2PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 3.4A 8-SOIC	In Stock437 More on Order	Manufacturer: Infineon Technologies	Series: FETKY™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 112mOhm @ 3.4A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7326D2PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 3.6A 8-SOIC	In Stock286 More on Order	Manufacturer: Infineon Technologies	Series: FETKY™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
FCH20N60	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO-247	In Stock208 More on Order	Manufacturer: ON Semiconductor	Series: SuperFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 20A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V	FET Feature: -	Power Dissipation (Max): 208W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
FDC3616N	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 3.7A SSOT-6	In Stock536 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 70mOhm @ 3.7A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1215pF @ 50V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SuperSOT™-6 FLMP	Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
FDC6392S	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.2A SSOT-6	In Stock497 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 150mOhm @ 2.2A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 960mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SuperSOT™-6	Package / Case: SOT-23-6 Thin, TSOT-23-6
FDC697P_F077	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 8A SSOT-6	In Stock402 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 3524pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SuperSOT™-6 FLMP	Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
FDC699P	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 7A SSOT-6	In Stock403 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 2640pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SuperSOT™-6 FLMP	Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
FDC796N	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12.5A SSOT-6	In Stock470 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1444pF @ 15V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SuperSOT™-6 FLMP	Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
FDFS2P102A	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3.3A 8-SOIC	In Stock311 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 125mOhm @ 3.3A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 3nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 182pF @ 10V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
FDFS2P102	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3.3A 8-SOIC	In Stock430 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 125mOhm @ 3.3A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
FDFS2P103A	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 5.3A 8-SOIC	In Stock513 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 59mOhm @ 5.3A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)