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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 618/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 4.3A I-PAK |
In Stock465 More on Order |
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Manufacturer: Vishay Siliconix |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 25W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-251AA |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 44A I-PAK |
In Stock250 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 107W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: IPAK (TO-251) |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 14A I-PAK |
In Stock312 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.3A, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 86W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: IPAK (TO-251) |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 18A I-PAK |
In Stock426 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 110W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: IPAK (TO-251) |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 2.2A I-PAK |
In Stock237 More on Order |
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Manufacturer: Vishay Siliconix |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 25W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-251AA |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 3.8A I-PAK |
In Stock211 More on Order |
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Manufacturer: Vishay Siliconix |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 42W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-251AA |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 16A I-PAK |
In Stock343 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 79W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: IPAK (TO-251) |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 27A I-PAK |
In Stock403 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 27A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 68W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: IPAK (TO-251) |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 150V 13A I-PAK |
In Stock548 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 110W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: IPAK (TO-251) |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 55V 11A I-PAK |
In Stock325 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 38W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: IPAK (TO-251) |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 2.7A I-PAK |
In Stock432 More on Order |
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Manufacturer: Vishay Siliconix |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 50W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-251AA |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 400V 1.8A I-PAK |
In Stock559 More on Order |
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Manufacturer: Vishay Siliconix |
Series: - |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 400V |
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 50W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-251AA |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 9.4A I-PAK |
In Stock454 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 86W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: IPAK (TO-251) |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2A I-PAK |
In Stock618 More on Order |
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Manufacturer: Vishay Siliconix |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 42W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-251AA |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 28A I-PAK |
In Stock445 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 68W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 6.5A TSOP-6 |
In Stock576 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: - |
Mounting Type: Surface Mount |
Supplier Device Package: Micro6™(SOT23-6) |
Package / Case: SOT-23-6 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.4A MICRO-8 |
In Stock495 More on Order |
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Manufacturer: Infineon Technologies |
Series: FETKY™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V |
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 1.3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Micro8™ |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 2.7A MICRO-8 |
In Stock231 More on Order |
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Manufacturer: Infineon Technologies |
Series: FETKY™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 130mOhm @ 1.7A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V |
FET Feature: Schottky Diode (Isolated) |
Power Dissipation (Max): 1.25W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Micro8™ |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 6.5A MICRO-8 |
In Stock573 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Micro8™ |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12A 8-SOIC |
In Stock654 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: - |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 4.5A 8-SOIC |
In Stock292 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 15A 8-SOIC |
In Stock393 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 12A 8-SOIC |
In Stock364 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V |
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 12A 8-SOIC |
In Stock527 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 1.2A 8-SOIC |
In Stock365 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 730mOhm @ 720mA, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A 8-SOIC |
In Stock497 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A 8-SOIC |
In Stock514 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 9.4A 8-SOIC |
In Stock259 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.4A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12.5A 8-SOIC |
In Stock514 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 2.8A SOT223 |
In Stock509 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223 |
Package / Case: TO-261-4, TO-261AA |