FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 615/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRL3103STRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 64A D2PAK	In Stock243 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 64A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V	FET Feature: -	Power Dissipation (Max): 94W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3202S	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 48A D2PAK	In Stock546 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 48A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V	Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 7V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V	FET Feature: -	Power Dissipation (Max): 69W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3302	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 39A TO-220AB	In Stock419 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 39A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V	Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V	FET Feature: -	Power Dissipation (Max): 57W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IRL3302S	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 39A D2PAK	In Stock578 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 39A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V	Rds On (Max) @ Id, Vgs: 20mOhm @ 23A, 7V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V	FET Feature: -	Power Dissipation (Max): 57W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3502	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 110A TO-220AB	In Stock317 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 110A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V	Rds On (Max) @ Id, Vgs: 7mOhm @ 64A, 7V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V	FET Feature: -	Power Dissipation (Max): 140W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IRL3705NS	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 89A D2PAK	In Stock440 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 89A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 98nC @ 5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 170W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3705NSTRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 89A D2PAK	In Stock308 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 89A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 98nC @ 5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 170W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL3803STRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 140A D2PAK	In Stock406 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 140A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 200W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL520NS	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 10A D2PAK	In Stock405 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 10A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 48W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL520NSTRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 10A D2PAK	In Stock447 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 10A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 48W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL530NL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 17A TO-262	In Stock443 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 17A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 79W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IRL530NSTRL	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 17A D2PAK	In Stock269 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 17A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 79W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL530NSTRR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 17A D2PAK	In Stock303 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 17A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.8W (Ta), 79W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL530STRR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 15A D2PAK	In Stock233 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 88W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL540S	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 28A D2PAK	In Stock525 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 28A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.7W (Ta), 150W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL620	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 5.2A TO-220AB	In Stock561 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IRL620S	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 5.2A D2PAK	In Stock177 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL630	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 9A TO-220AB	In Stock335 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V	FET Feature: -	Power Dissipation (Max): 74W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IRL630S	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 9A D2PAK	In Stock491 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 74W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL630STRL	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 9A D2PAK	In Stock541 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 74W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRL640	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 17A TO-220AB	In Stock362 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 17A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V	FET Feature: -	Power Dissipation (Max): 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IRL640S	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 17A D2PAK	In Stock530 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 17A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRLI520G	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 7.2A TO220FP	In Stock428 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 270mOhm @ 4.3A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V	FET Feature: -	Power Dissipation (Max): 37W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3 Full Pack, Isolated Tab
IRLI530G	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 9.7A TO220FP	In Stock267 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 160mOhm @ 5.8A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V	FET Feature: -	Power Dissipation (Max): 42W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3 Full Pack, Isolated Tab
IRLI620G	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 4A TO220FP	In Stock504 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 800mOhm @ 2.4A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V	FET Feature: -	Power Dissipation (Max): 30W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3 Full Pack, Isolated Tab
IRLI630G	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 6.2A TO220FP	In Stock342 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 400mOhm @ 3.7A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V	FET Feature: -	Power Dissipation (Max): 35W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3 Full Pack, Isolated Tab
IRLI640G	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 9.9A TO220FP	In Stock423 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 180mOhm @ 5.9A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V	FET Feature: -	Power Dissipation (Max): 40W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3 Full Pack, Isolated Tab
IRLL014	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2.7A SOT223	In Stock295 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V	FET Feature: -	Power Dissipation (Max): 2W (Ta), 3.1W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
IRLL014NTR	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 2A SOT223	In Stock165 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA
IRLL014TR	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 2.7A SOT223	In Stock357 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4V, 5V	Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V	FET Feature: -	Power Dissipation (Max): 2W (Ta), 3.1W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-223	Package / Case: TO-261-4, TO-261AA