Semiconductors
Passive Components
Sensors
Power
Optoelectronics
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 571/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 70A ISOTOP |
In Stock453 More on Order |
|
Manufacturer: STMicroelectronics |
Series: MDmesh™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 266nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 600W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: ISOTOP |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 70V 340A SOT-227B |
In Stock516 More on Order |
|
Manufacturer: IXYS |
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 70V |
Current - Continuous Drain (Id) @ 25°C: 340A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 4V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 490nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 12200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 700W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1100V 25A SOT-227B |
In Stock425 More on Order |
|
Manufacturer: IXYS |
Series: Polar™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1100V |
Current - Continuous Drain (Id) @ 25°C: 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 360mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 695W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 23A SOT-227B |
In Stock184 More on Order |
|
Manufacturer: IXYS |
Series: Polar™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 11900pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 595W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 15A SOT-227B |
In Stock370 More on Order |
|
Manufacturer: IXYS |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 20V |
Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 15V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 8300pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 540W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1.5KV 12A TO268 |
In Stock284 More on Order |
|
Manufacturer: IXYS |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1500V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 890W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-268 |
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 23A SOT-227B |
In Stock182 More on Order |
|
Manufacturer: IXYS |
Series: Polar™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 460mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 695W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 73A TO-264MAX |
In Stock520 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 73A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 75mOhm @ 36.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 893W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: 264 MAX™ [L2] |
Package / Case: TO-264-3, TO-264AA |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 46A SOT-227B |
In Stock391 More on Order |
|
Manufacturer: IXYS |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 46A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 20V |
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 20V |
Vgs(th) (Max) @ Id: 6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 15V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 700W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH |
In Stock477 More on Order |
|
Manufacturer: IXYS |
Series: Polar™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 3000V |
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 21Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 160W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: ISOPLUS i4-PAC™ |
Package / Case: ISOPLUSi5-Pak™ |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 30A PLUS264 |
In Stock239 More on Order |
|
Manufacturer: IXYS |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Through Hole |
Supplier Device Package: ISOPLUS264™ |
Package / Case: ISOPLUS264™ |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 38A SOT-227 |
In Stock572 More on Order |
|
Manufacturer: IXYS |
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 38A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: 6.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 264nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 960W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1100V 35A SOT-227B |
In Stock163 More on Order |
|
Manufacturer: IXYS |
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1100V |
Current - Continuous Drain (Id) @ 25°C: 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 6.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 960W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 180A SOT-227B |
In Stock521 More on Order |
|
Manufacturer: IXYS |
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 660nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 22000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 700W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1100V 24A SMPD |
In Stock537 More on Order |
|
Manufacturer: IXYS |
Series: HiPerFET™, PolarP2™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1100V |
Current - Continuous Drain (Id) @ 25°C: 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 290mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 500W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 24-SMPD |
Package / Case: 24-PowerSMD, 21 Leads |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 25A SOT-227 |
In Stock615 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 350mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 520W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 58A T-MAX |
In Stock520 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 15V |
Rds On (Max) @ Id, Vgs: 90mOhm @ 29A, 12V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 730W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: T-MAX™ [B2] |
Package / Case: TO-247-3 Variant |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 100A SOT-227 |
In Stock385 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 103A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 38mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 24600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 960W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 30A PLUS264 |
In Stock642 More on Order |
|
Manufacturer: IXYS |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 20V |
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 20V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 545nC @ 20V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 800W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PLUS264™ |
Package / Case: TO-264-3, TO-264AA |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 71A SOT-227 |
In Stock409 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 71A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 50mOhm @ 35.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 10550pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 595W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 49A T-MAX |
In Stock178 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 49A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 12V |
Rds On (Max) @ Id, Vgs: 125mOhm @ 24.5A, 12V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 730W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: T-MAX™ [B2] |
Package / Case: TO-247-3 Variant |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 30A SOT-227B |
In Stock529 More on Order |
|
Manufacturer: IXYS |
Series: Polar™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 890W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 31A SP1 |
In Stock564 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 14560pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 657W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SP1 |
Package / Case: SP1 |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1100V 34A SOT-227B |
In Stock282 More on Order |
|
Manufacturer: IXYS |
Series: Polar™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1100V |
Current - Continuous Drain (Id) @ 25°C: 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 890W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 49A TO-264 |
In Stock373 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 49A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 12V |
Rds On (Max) @ Id, Vgs: 125mOhm @ 24.5A, 12V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 730W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264 [L] |
Package / Case: TO-264-3, TO-264AA |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 33A SOT-227 |
In Stock389 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 320mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 18200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 960W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 84A SOT-227 |
In Stock361 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 84A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 55mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 960W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1100V 36A SOT-227B |
In Stock512 More on Order |
|
Manufacturer: IXYS |
Series: Polar™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1100V |
Current - Continuous Drain (Id) @ 25°C: 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1000W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 2500V 5A SOT227B |
In Stock325 More on Order |
|
Manufacturer: IXYS |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 2500V |
Current - Continuous Drain (Id) @ 25°C: 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 8.8Ohm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 8560pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 700W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
|
|
|
Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 103A SOT227 |
In Stock443 More on Order |
|
Manufacturer: Microsemi Corporation |
Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 103A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 36mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 24600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 960W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: SOT-227-4, miniBLOC |