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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 569/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 20A SOT-227 |
In Stock391 More on Order |
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Manufacturer: Microsemi Corporation |
Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 440mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 460W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: SOT-227-4, miniBLOC |
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TT Electronics/Optek Technology |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 200MA SMD |
In Stock317 More on Order |
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Manufacturer: TT Electronics/Optek Technology |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±40V |
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 300mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 3-SMD |
Package / Case: 3-SMD, No Lead |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 37A SOT-227B |
In Stock359 More on Order |
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Manufacturer: IXYS |
Series: Polar™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 890W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 22A T-MAX |
In Stock410 More on Order |
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Manufacturer: Microsemi Corporation |
Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 570mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 690W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: T-MAX™ [B2] |
Package / Case: TO-247-3 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 50A SMPD |
In Stock384 More on Order |
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Manufacturer: IXYS |
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: ISOPLUS-SMPD™.B |
Package / Case: 9-SMD Module |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 50A SMPD |
In Stock476 More on Order |
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Manufacturer: IXYS |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Supplier Device Package: ISOPLUS-SMPD™.B |
Package / Case: 9-SMD Module |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 50A PLUS264 |
In Stock386 More on Order |
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Manufacturer: IXYS |
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1135W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PLUS264™ |
Package / Case: TO-264-3, TO-264AA |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1100V 40A PLUS264 |
In Stock306 More on Order |
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Manufacturer: IXYS |
Series: HiPerFET™, PolarP2™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1100V |
Current - Continuous Drain (Id) @ 25°C: 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1250W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PLUS264™ |
Package / Case: TO-264-3, TO-264AA |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 49A SOT-227 |
In Stock172 More on Order |
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Manufacturer: Microsemi Corporation |
Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 49A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 90mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 13190pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 540W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: SOT-227-4, miniBLOC |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH |
In Stock416 More on Order |
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Manufacturer: IXYS |
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 400A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 365nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 23700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 695W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 18A I5-PAK |
In Stock322 More on Order |
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Manufacturer: IXYS |
Series: HiPerFET™, PolarP2™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 380mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 357W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: ISOPLUSi5-Pak™ |
Package / Case: ISOPLUSi5-Pak™ |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 17A TO-264 |
In Stock395 More on Order |
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Manufacturer: IXYS |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 20V |
Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 15V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 8300pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 700W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264 (IXTK) |
Package / Case: TO-264-3, TO-264AA |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 70A SOT-227 |
In Stock380 More on Order |
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Manufacturer: Microsemi Corporation |
Series: POWER MOS V® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 300V |
Current - Continuous Drain (Id) @ 25°C: 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 40mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 450W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: SOT-227-4, miniBLOC |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 24A SOT-227B |
In Stock549 More on Order |
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Manufacturer: IXYS |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 900V |
Current - Continuous Drain (Id) @ 25°C: 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 500W (Tc) |
Operating Temperature: - |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 138A SOT-227B |
In Stock422 More on Order |
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Manufacturer: IXYS |
Series: Polar™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 300V |
Current - Continuous Drain (Id) @ 25°C: 138A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 18mOhm @ 85A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 258nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 890W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 295A SOT-227 |
In Stock496 More on Order |
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Manufacturer: IXYS |
Series: Polar™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 295A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1070W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 22A TO-264 |
In Stock432 More on Order |
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Manufacturer: Microsemi Corporation |
Series: POWER MOS 7® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 570mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 690W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264 [L] |
Package / Case: TO-264-3, TO-264AA |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 102A SMPD |
In Stock456 More on Order |
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Manufacturer: IXYS |
Series: GigaMOS™, HiPerFET™, TrenchT2™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 300V |
Current - Continuous Drain (Id) @ 25°C: 102A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 20mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 570W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 24-SMPD |
Package / Case: 24-PowerSMD, 21 Leads |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 168A SMPD |
In Stock219 More on Order |
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Manufacturer: IXYS |
Series: GigaMOS™, HiPerFET™, TrenchT2™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 168A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 378nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 600W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 24-SMPD |
Package / Case: 24-PowerSMD, 21 Leads |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 31A SOT-227 |
In Stock506 More on Order |
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Manufacturer: Microsemi Corporation |
Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 800V |
Current - Continuous Drain (Id) @ 25°C: 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 210mOhm @ 24A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 303nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 9326pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 543W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: SOT-227-4, miniBLOC |
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MICROSS/On Semiconductor |
Transistors - FETs, MOSFETs - Single DIE MOSFET N-CH 100V |
In Stock488 More on Order |
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Manufacturer: MICROSS/On Semiconductor |
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 32A SOT-227 |
In Stock259 More on Order |
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Manufacturer: IXYS |
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 520AW (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1KV 21A SOT-227B |
In Stock587 More on Order |
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Manufacturer: IXYS |
Series: MegaMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 520W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1500V 20A TO-264 |
In Stock305 More on Order |
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Manufacturer: IXYS |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1500V |
Current - Continuous Drain (Id) @ 25°C: 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1Ohm @ 10A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1250W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-264 (IXTK) |
Package / Case: TO-264-3, TO-264AA |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 41A SOT-227B |
In Stock636 More on Order |
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Manufacturer: IXYS |
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 41A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 110mOhm @ 24A, 10V |
Vgs(th) (Max) @ Id: 4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 400W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 41A SOT-227B |
In Stock388 More on Order |
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Manufacturer: IXYS |
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 41A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 110mOhm @ 24A, 10V |
Vgs(th) (Max) @ Id: 4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 400W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 50A SOT-227 |
In Stock566 More on Order |
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Manufacturer: Microsemi Corporation |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 290W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 |
Package / Case: SOT-227-4, miniBLOC |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 235A |
In Stock560 More on Order |
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Manufacturer: IXYS |
Series: GigaMOS™, TrenchT2™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 235A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 715nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 47500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 680W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 24-SMPD |
Package / Case: 24-PowerSMD, 21 Leads |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 334A SMPD |
In Stock370 More on Order |
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Manufacturer: IXYS |
Series: GigaMOS™, HiPerFET™, TrenchT2™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 334A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 670nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 680W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 24-SMPD |
Package / Case: 24-PowerSMD, 21 Leads |
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Microsemi |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 23A SOT-227 |
In Stock544 More on Order |
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Manufacturer: Microsemi Corporation |
Series: POWER MOS 8™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 380mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 545W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: SOT-227-4, miniBLOC |