FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 522/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXTA1R6N100D2	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 1.6A D2PAK	In Stock494 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V	FET Feature: Depletion Mode	Power Dissipation (Max): 100W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPC30S2SN08NX2MA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MV POWER MOS	In Stock430 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
AUIRF1324S-7P	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 24V 240A D2PAK-7	In Stock450 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 24V	Current - Continuous Drain (Id) @ 25°C: 240A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 252nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 19V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: D2PAK (7-Lead)	Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
TK13A55DA(STA4,QM)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 550V 12.5A TO-220SIS	In Stock615 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: π-MOSVII	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 550V	Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 480mOhm @ 6.3A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V	FET Feature: -	Power Dissipation (Max): 45W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220SIS	Package / Case: TO-220-3 Full Pack
IRFSL38N20DPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 43A TO-262-3	In Stock274 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 43A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-262	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IXFA4N100P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 4A D2PAK	In Stock626 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarP2™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXFA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP15P15T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 150V 15A TO-220	In Stock257 More on Order	Manufacturer: IXYS	Series: TrenchP™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 240mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTP26P10T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 26A TO-220	In Stock328 More on Order	Manufacturer: IXYS	Series: TrenchP™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTP48P05T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 48A TO-220	In Stock558 More on Order	Manufacturer: IXYS	Series: TrenchP™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 48A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTP8N70X2	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 700V 8A TO220	In Stock208 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 700V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
IXTQ36N20T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V TO-3P	In Stock414 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
IXTQ56N15T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 56A TO-3P	In Stock262 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 56A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
IPC302N08N3X1SA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 1A SAWN ON FOIL	In Stock492 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 1A (Tj)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 270µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: Sawn on foil	Package / Case: Die
IRF830A	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 5A TO-220AB	In Stock387 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V	FET Feature: -	Power Dissipation (Max): 74W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
FCP099N65S3	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 30A TO220-3	In Stock337 More on Order	Manufacturer: ON Semiconductor	Series: SuperFET® III	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 3mA	Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 400V	FET Feature: -	Power Dissipation (Max): 227W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
IXTP42N15T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 42A TO-220	In Stock524 More on Order	Manufacturer: IXYS	Series: TrenchHV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 42A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXFA8N50P3	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 8A TO-263AA	In Stock394 More on Order	Manufacturer: IXYS	Series: HiPerFET™, Polar3™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V	Vgs(th) (Max) @ Id: 5V @ 1.5mA	Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V	FET Feature: -	Power Dissipation (Max): 180W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXFA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
HUF75842P3	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 43A TO-220AB	In Stock308 More on Order	Manufacturer: ON Semiconductor	Series: UltraFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 43A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 42mOhm @ 43A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 175nC @ 20V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 25V	FET Feature: -	Power Dissipation (Max): 230W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
FDI9406-F085	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 110A TO262AB	In Stock525 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101, PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 110A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.2mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7710pF @ 25V	FET Feature: -	Power Dissipation (Max): 176W (Tj)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK (TO-262)	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
FCH165N65S3R0-F155	ON Semiconductor	Transistors - FETs, MOSFETs - Single SF3 650V 165MOHM E TO247L	In Stock424 More on Order	Manufacturer: ON Semiconductor	Series: SuperFET® III	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 19A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 1.9mA	Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 400V	FET Feature: -	Power Dissipation (Max): 154W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
AUIRF2804L	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 195A TO262	In Stock277 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 195A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2mOhm @ 75A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IPI100N10S305AKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A TO262-3	In Stock406 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V	Vgs(th) (Max) @ Id: 4V @ 240µA	Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 11570pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
SIHA21N65EF-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 21A TO-220	In Stock642 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 21A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2322pF @ 100V	FET Feature: -	Power Dissipation (Max): 35W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220 Full Pack	Package / Case: TO-220-3 Full Pack
SIHG17N60D-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 17A TO247AC	In Stock323 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 17A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 100V	FET Feature: -	Power Dissipation (Max): 277.8W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247AC	Package / Case: TO-247-3
SIHG17N60D-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 17A TO247AC	In Stock397 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 17A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 100V	FET Feature: -	Power Dissipation (Max): 277.8W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247AC	Package / Case: TO-247-3
IXTP12N50P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 12A TO-220	In Stock460 More on Order	Manufacturer: IXYS	Series: Polar™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXFA7N80P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 7A TO-263	In Stock418 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXFA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP12N65X2	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 12A TO-220	In Stock641 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 12A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V	FET Feature: -	Power Dissipation (Max): 180W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220	Package / Case: TO-220-3
IXTP230N04T4	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH	In Stock441 More on Order	Manufacturer: IXYS	Series: TrenchT4™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 230A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 25V	FET Feature: -	Power Dissipation (Max): 340W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IPC302NE7N3X1SA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 1A SAWN ON FOIL	In Stock436 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 1A (Tj)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V	Vgs(th) (Max) @ Id: 3.8V @ 270µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: Sawn on foil	Package / Case: Die