FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

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Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SI7862ADP-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 16V 18A PPAK SO-8	In Stock496 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 16V	Current - Continuous Drain (Id) @ 25°C: 18A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 3mOhm @ 29A, 4.5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 7340pF @ 8V	FET Feature: -	Power Dissipation (Max): 1.9W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
TK25V60X,LQ	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X35 PB-F POWER MOSFET TRANSISTOR	In Stock315 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: DTMOSIV-H	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 25A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 135mOhm @ 7.5A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 1.2mA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V	FET Feature: -	Power Dissipation (Max): 180W (Tc)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Supplier Device Package: 4-DFN-EP (8x8)	Package / Case: 4-VSFN Exposed Pad
IPL60R140CFD7AUMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_NEW	In Stock523 More on Order	Manufacturer: Infineon Technologies	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
TK13A50DA(STA4,Q,M	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 12.5A TO-220SIS	In Stock531 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: π-MOSVII	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 470mOhm @ 6.3A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V	FET Feature: -	Power Dissipation (Max): 45W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220SIS	Package / Case: TO-220-3 Full Pack
TK14A45DA(STA4,QM)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 450V 13.5A TO-220SIS	In Stock571 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 450V	Current - Continuous Drain (Id) @ 25°C: 13.5A	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 410mOhm @ 6.8A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-220SIS	Package / Case: TO-220-3 Full Pack
AUIRF3305	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 140A TO220AB	In Stock482 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 140A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 25V	FET Feature: -	Power Dissipation (Max): 330W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220	Package / Case: TO-220-3
FCP125N60E	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 29A TO220	In Stock423 More on Order	Manufacturer: ON Semiconductor	Series: SuperFET® II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 29A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2990pF @ 380V	FET Feature: -	Power Dissipation (Max): 278W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
AOK22N50L	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 22A TO247	In Stock526 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 22A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 25V	FET Feature: -	Power Dissipation (Max): 417W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247	Package / Case: TO-247-3
IPA65R150CFDXKSA2	Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_LEGACY	In Stock243 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™ CFD2	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 900µA	Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V	FET Feature: -	Power Dissipation (Max): 34.7W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220 Full Pack	Package / Case: TO-220-3 Full Pack
IPW60R280E6FKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 13.8A TO247	In Stock611 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 430µA	Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V	FET Feature: -	Power Dissipation (Max): 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO247-3	Package / Case: TO-247-3
IPP100N06S2L05AKSA2	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 100A TO220-3	In Stock552 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO220-3-1	Package / Case: TO-220-3
NTMFS5C404NLTWFT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 352A SO8FL	In Stock189 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 12168pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.9W (Ta), 200W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN
FCP130N60	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 28A TO220	In Stock281 More on Order	Manufacturer: ON Semiconductor	Series: SuperFET® II	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 28A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3590pF @ 380V	FET Feature: -	Power Dissipation (Max): 278W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
NVMFS5C404NLWFAFT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 370A 5DFN	In Stock134 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 370A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 81nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 12168pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
IPW50R250CPFKSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 13A TO-247	In Stock647 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 520µA	Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 100V	FET Feature: -	Power Dissipation (Max): 114W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PG-TO247-3	Package / Case: TO-247-3
NTMFS5H600NLT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 35A 250A 5DFN	In Stock522 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6680pF @ 30V	FET Feature: -	Power Dissipation (Max): 3.3W (Ta), 160W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
IRFBA1404PPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 206A SUPER-220	In Stock430 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 206A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.7mOhm @ 95A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -40°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: SUPER-220™ (TO-273AA)	Package / Case: TO-273AA
IRF737LC	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 6.1A TO-220AB	In Stock613 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 300V	Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 750mOhm @ 3.7A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V	FET Feature: -	Power Dissipation (Max): 74W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
TK10Q60W,S1VQ	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 9.7A IPAK	In Stock435 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: DTMOSIV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V	Vgs(th) (Max) @ Id: 3.7V @ 500µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V	FET Feature: -	Power Dissipation (Max): 80W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I-PAK	Package / Case: TO-251-3 Stub Leads, IPak
IRFBC40LPBF	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 6.2A TO-262	In Stock274 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 130W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-262-3	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
IPB65R125C7ATMA2	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO263-3	In Stock276 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™ C7	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 650V	Current - Continuous Drain (Id) @ 25°C: 18A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V	Vgs(th) (Max) @ Id: 4V @ 440µA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 400V	FET Feature: -	Power Dissipation (Max): 101W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXFP10N60P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A TO-220	In Stock542 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarP2™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 10A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXFP12N50PM	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 6A TO-220	In Stock594 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarP2™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTA08N120P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 0.8A TO-263	In Stock340 More on Order	Manufacturer: IXYS	Series: Polar™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1200V	Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 25Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA2N100P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 2A TO-263	In Stock320 More on Order	Manufacturer: IXYS	Series: Polar™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 24.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 25V	FET Feature: -	Power Dissipation (Max): 86W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP08N120P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 800MA TO-220	In Stock545 More on Order	Manufacturer: IXYS	Series: Polar™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1200V	Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 25Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXFP4N100P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 4A TO-220	In Stock204 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarP2™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTA36N20T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 36A TO-263	In Stock239 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 36A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTP05N100M	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 700MA TO-220	In Stock195 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 700mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V	FET Feature: -	Power Dissipation (Max): 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXTU05N100	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 750MA TO-251	In Stock210 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V	FET Feature: -	Power Dissipation (Max): 40W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-251	Package / Case: TO-251-3 Short Leads, IPak, TO-251AA