Semiconductors
Passive Components
Sensors
Power
Optoelectronics
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 418/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.9A DPAK |
In Stock294 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 28W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 2.3A SOT-223 |
In Stock493 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.15A, 5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.7W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223-4 |
Package / Case: TO-261-4, TO-261AA |
|
|
|
Sanken |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 26A 8DFN |
In Stock274 More on Order |
|
Manufacturer: Sanken |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 14A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 31A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 350µA |
Gate Charge (Qg) (Max) @ Vgs: 24.6nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 46W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN (5x6) |
Package / Case: 8-PowerTDFN |
|
|
|
Sanken |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 11A 8DFN |
In Stock575 More on Order |
|
Manufacturer: Sanken |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 23.3A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 350µA |
Gate Charge (Qg) (Max) @ Vgs: 24.9nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 46W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN (5x6) |
Package / Case: 8-PowerTDFN |
|
|
|
Sanken |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 7A 8DFN |
In Stock304 More on Order |
|
Manufacturer: Sanken |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 15mOhm @ 15.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 350µA |
Gate Charge (Qg) (Max) @ Vgs: 23.7nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 46W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN (5x6) |
Package / Case: 8-PowerTDFN |
|
|
|
Sanken |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 4A 8DFN |
In Stock319 More on Order |
|
Manufacturer: Sanken |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 47.7mOhm @ 9.3A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 350µA |
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta), 46W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN (5x6) |
Package / Case: 8-PowerTDFN |
|
|
|
Texas Instruments |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5A 6WSON |
In Stock502 More on Order |
|
Manufacturer: |
Series: NexFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V |
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V |
Vgs(th) (Max) @ Id: 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V |
Vgs (Max): +10V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.4W (Ta), 17W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-WSON (2x2) |
Package / Case: 6-WDFN Exposed Pad |
|
|
|
Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2.5A IPAK |
In Stock327 More on Order |
|
Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.25A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 56.8W (Tc) |
Operating Temperature: -50°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-251-3 |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 17.6A POWERDI |
In Stock493 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3690pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 900mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerDI3333-8 |
Package / Case: 8-PowerVDFN |
|
|
|
Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH |
In Stock429 More on Order |
|
Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 6.2W (Ta), 46W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN (5x6) |
Package / Case: 8-PowerSMD, Flat Leads |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V POWERDI333 |
In Stock275 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V POWERDI333 |
In Stock562 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 8V-24V U-DFN2020-6 |
In Stock171 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V |
Vgs(th) (Max) @ Id: 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 42.6nC @ 5V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 4V |
FET Feature: - |
Power Dissipation (Max): 660mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: U-DFN2020-6 (Type E) |
Package / Case: 6-PowerUDFN |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 16A 8SO |
In Stock531 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 16A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 64.2nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2714pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 40A TSDSON-8 |
In Stock292 More on Order |
|
Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 3.1V @ 73µA |
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 3360pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta), 52W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TSDSON-8 |
Package / Case: 8-PowerTDFN |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 9.8A 8SOIC |
In Stock562 More on Order |
|
Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V |
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 7.8A, 20V |
Vgs(th) (Max) @ Id: 2.4V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 28A DPAK |
In Stock221 More on Order |
|
Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 68W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 25V30V POWERDI333 |
In Stock615 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10.4A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 19.3nC @ 10V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 4310pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerDI3333-8 |
Package / Case: 8-PowerVDFN |
|
|
|
Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 28A 8DFN |
In Stock473 More on Order |
|
Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN (5x6) |
Package / Case: 8-PowerSMD, Flat Leads |
|
|
|
Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 85A 8DFN |
In Stock146 More on Order |
|
Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 85A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 32.5W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-DFN (5x6) |
Package / Case: 8-PowerSMD, Flat Leads |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 3.1A TO-251-3 |
In Stock225 More on Order |
|
Manufacturer: Infineon Technologies |
Series: CoolMOS™ CE |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 49W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO251-3 |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single CONSUMER |
In Stock436 More on Order |
|
Manufacturer: Infineon Technologies |
Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3.6A 6-TSOP |
In Stock479 More on Order |
|
Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V |
Vgs(th) (Max) @ Id: 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): 1.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 6-TSOP |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 6.5A TO251A |
In Stock552 More on Order |
|
Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 2.3W (Ta), 50W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-251A |
Package / Case: TO-251-3 Stub Leads, IPak |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V POWERDI3333-8 |
In Stock605 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerDI3333-8 |
Package / Case: 8-PowerVDFN |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 24A POWERDI5060 |
In Stock331 More on Order |
|
Manufacturer: Diodes Incorporated |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.9W (Ta) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerDI5060-8 |
Package / Case: 8-PowerTDFN |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 4.6A IPAK |
In Stock457 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 40W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Alpha & Omega Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2A TO251A |
In Stock253 More on Order |
|
Manufacturer: Alpha & Omega Semiconductor Inc. |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 56.8W (Tc) |
Operating Temperature: -50°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-251A |
Package / Case: TO-251-3 Stub Leads, IPak |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 170MA SOT23 |
In Stock358 More on Order |
|
Manufacturer: Infineon Technologies |
Series: SIPMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V |
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V |
Vgs(th) (Max) @ Id: 1.8V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 7V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 68pF @ 10V |
FET Feature: Depletion Mode |
Power Dissipation (Max): 360mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7A 8-SOIC |
In Stock468 More on Order |
|
Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |