FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 417/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
DMT6012LFV-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 41V-60V POWERDI333	In Stock379 More on Order	Manufacturer: Diodes Incorporated	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
DMT6012LFV-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 41V-60V POWERDI333	In Stock395 More on Order	Manufacturer: Diodes Incorporated	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
RSQ030P03TR	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 3A TSMT6	In Stock251 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 6nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.25W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TSMT6 (SC-95)	Package / Case: SOT-23-6 Thin, TSOT-23-6
TPC6110(TE85L,F,M)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 4.5A VS6	In Stock267 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSVI	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 56mOhm @ 2.2A, 10V	Vgs(th) (Max) @ Id: 2V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V	FET Feature: -	Power Dissipation (Max): 700mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: VS-6 (2.9x2.8)	Package / Case: SOT-23-6 Thin, TSOT-23-6
DMTH4008LFDFW-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V U-DFN2020-	In Stock513 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 20V	FET Feature: -	Power Dissipation (Max): 990mW (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: U-DFN2020-6	Package / Case: 6-UDFN Exposed Pad
DMPH6050SFG-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 41V-60V POWERDI333	In Stock433 More on Order	Manufacturer: Diodes Incorporated	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
DMTH6016LFDFW-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 41V-60V U-DFN2020-	In Stock239 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 30V	FET Feature: -	Power Dissipation (Max): 1.06W (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: U-DFN2020-6	Package / Case: 6-UDFN Exposed Pad
DMG7401SFGQ-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 9.8A POWERDI3333	In Stock458 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V	Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 20V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 2987pF @ 15V	FET Feature: -	Power Dissipation (Max): 940mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8	Package / Case: 8-PowerVDFN
IPD65R1K5CEAUMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V 5.2A TO252-3	In Stock422 More on Order	Manufacturer: Infineon Technologies	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 700V	Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V	FET Feature: -	Power Dissipation (Max): 53W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMG7430LFGQ-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 25V-30V POWERDI333	In Stock434 More on Order	Manufacturer: Diodes Incorporated	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
DMTH6009SPS-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 41V-60V POWERDI506	In Stock338 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 89.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1572pF @ 30V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta), 136W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI5060-8	Package / Case: 8-PowerTDFN
AO4443	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 6A 8SOIC	In Stock370 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 42mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 2.6V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 20V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
AON4407	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 9A 8DFN	In Stock512 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 9A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V	Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 4.5V	Vgs(th) (Max) @ Id: 850mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 6V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-DFN (3x2)	Package / Case: 8-SMD, Flat Lead
DMN10H099SFG-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 4.2A	In Stock672 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25.2nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 50V	FET Feature: -	Power Dissipation (Max): 980mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8	Package / Case: 8-PowerVDFN
AON2392	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 100V 8A 8DFN	In Stock492 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: AlphaSGT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 50V	FET Feature: -	Power Dissipation (Max): 4.1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-DFN (2x2)	Package / Case: 8-VFDFN Exposed Pad
SIPC03N60C3X1SA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single TRANSISTOR N-CH	In Stock341 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
NVD5807NT4G-VF01	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 23A DPAK	In Stock527 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 23A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 603pF @ 25V	FET Feature: -	Power Dissipation (Max): 33W (Tj)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK (SINGLE GAUGE)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
IPN80R4K5P7ATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 1.5A SOT223	In Stock360 More on Order	Manufacturer: Infineon Technologies	Series: CoolMOS™ P7	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V	Vgs(th) (Max) @ Id: 3.5V @ 20µA	Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 500V	FET Feature: -	Power Dissipation (Max): 6W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-SOT223	Package / Case: TO-261-3
NTMFS4C760NT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 46A SO8FL	In Stock378 More on Order	Manufacturer: ON Semiconductor	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
NTMFS4C06NBT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 20A 69A 5DFN	In Stock447 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
IPD090N03LGBTMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 40A TO252	In Stock243 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 40A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V	FET Feature: -	Power Dissipation (Max): 42W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMP6110SSDQ-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 60V 7.8A 8SO	In Stock303 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 105mOhm @ 4.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V	FET Feature: -	Power Dissipation (Max): 1.2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
DMT3006LPB-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 25V-30V POWERDI506	In Stock254 More on Order	Manufacturer: Diodes Incorporated	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
NTMFS4939NT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 9.3A SO8FL	In Stock670 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 53A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 28.5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1954pF @ 15V	FET Feature: -	Power Dissipation (Max): 920mW (Ta), 30W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
TPC8134,LQ(S	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 5A 8SOP	In Stock410 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSVI	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 52mOhm @ 2.5A, 10V	Vgs(th) (Max) @ Id: 2V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): +20V, -25V	Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 10V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP	Package / Case: 8-SOIC (0.154", 3.90mm Width)
PMPB15XPH	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 8.2A 6DFN	In Stock345 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 4.5V	Vgs(th) (Max) @ Id: 900mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 2875pF @ 6V	FET Feature: -	Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DFN2020MD-6	Package / Case: 6-UDFN Exposed Pad
PMPB15XPZ	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V SOT1220	In Stock443 More on Order	Manufacturer: Nexperia USA Inc.	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 19mOhm @ 8.2A, 4.5V	Vgs(th) (Max) @ Id: 900mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 2875pF @ 6V	FET Feature: -	Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DFN2020MD-6	Package / Case: 6-UDFN Exposed Pad
NTMFS4C027NT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 16.4A 52A 5DFN	In Stock484 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.8mOhm @ 18A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
FDMS8888	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13.5A 8-PQFN	In Stock431 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 21A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 42W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-PQFN (5x6)	Package / Case: 8-PowerTDFN
DMN60H3D5SK3-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2.8A TO252	In Stock385 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 354pF @ 25V	FET Feature: -	Power Dissipation (Max): 41W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63