FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 412/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AOL1454G	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET	In Stock514 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: AlphaSGT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 46A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 20V	FET Feature: -	Power Dissipation (Max): 6.2W (Ta), 52W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: UltraSO-8™	Package / Case: 3-PowerSMD, Flat Leads
DMN2011UFDE-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 11.7A SOT323	In Stock385 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V	Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 3372pF @ 10V	FET Feature: -	Power Dissipation (Max): 610mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: U-DFN2020-6 (Type E)	Package / Case: 6-UDFN Exposed Pad
SI7153DN-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 18A POWERPAK1212	In Stock267 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 18A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 15V	FET Feature: -	Power Dissipation (Max): 52W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® 1212-8	Package / Case: PowerPAK® 1212-8
BUK7Y98-80EX	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 12.3A LFPAK	In Stock155 More on Order	Manufacturer: Nexperia USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 80V	Current - Continuous Drain (Id) @ 25°C: 12.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 498pF @ 25V	FET Feature: -	Power Dissipation (Max): 37W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK56, Power-SO8	Package / Case: SC-100, SOT-669
DMP1009UFDFQ-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 8V-24V U-DFN2020-6	In Stock235 More on Order	Manufacturer: Diodes Incorporated	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
AON7532E	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 28A 8DFN	In Stock538 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: AlphaMOS	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 30.5A (Ta), 28A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 15V	FET Feature: -	Power Dissipation (Max): 5W (Ta), 28W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-DFN (2.9x2.3)	Package / Case: 8-SMD, Flat Lead
QS6U22TR	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.5A TSMT6	In Stock248 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 215mOhm @ 1.5A, 4.5V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 1.25W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TSMT6 (SC-95)	Package / Case: SOT-23-6 Thin, TSOT-23-6
BUK7Y29-40EX	Nexperia	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 26A LFPAK	In Stock244 More on Order	Manufacturer: Nexperia USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 492pF @ 25V	FET Feature: -	Power Dissipation (Max): 37W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: LFPAK56, Power-SO8	Package / Case: SC-100, SOT-669
UPA2630T1R-E2-AX	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 7A 6SON	In Stock299 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 59mOhm @ 3.5A, 1.8V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 6-HUSON (2x2)	Package / Case: 6-PowerWDFN
UPA2631T1R-E2-AX	Renesas Electronics America	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 6A 6SON	In Stock417 More on Order	Manufacturer: Renesas Electronics America	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 62mOhm @ 3A, 1.8V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 6-HUSON (2x2)	Package / Case: 6-PowerWDFN
BSL202SNH6327XTSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 7.5A 6TSOP	In Stock645 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 30µA	Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 1147pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TSOP-6-6	Package / Case: SOT-23-6 Thin, TSOT-23-6
NTNS3A92PZT5G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V SPCL XLLGA3	In Stock354 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IPS60R2K1CEAKMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single CONSUMER	In Stock568 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
IPU60R2K1CEAKMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single CONSUMER	In Stock303 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
ISP75DP06LMXTSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V SOT223-4	In Stock339 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 750mOhm @ 1.1A, 10V	Vgs(th) (Max) @ Id: 2V @ 77µA	Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 30V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-SOT223-4	Package / Case: TO-261-4, TO-261AA
DMN3009SK3-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 80A TO252	In Stock568 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V	FET Feature: -	Power Dissipation (Max): 3.4W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
AON7409	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 16A 8DFN	In Stock338 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 32A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: 2.7V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 2142pF @ 15V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 96W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-DFN (3x3)	Package / Case: 8-PowerVDFN
AONR21357	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 3X3 8DFN EP	In Stock427 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 15V	FET Feature: -	Power Dissipation (Max): 5W (Ta), 30W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-DFN-EP (3x3)	Package / Case: 8-PowerVDFN
SIPC03N50C3X1SA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single TRANSISTOR N-CH	In Stock540 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
AON7502	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 21A 8DFN	In Stock412 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 1022pF @ 15V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 31W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-DFN (3x3)	Package / Case: 8-PowerVDFN
IPN70R2K1CEATMA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 750V 4A SOT223	In Stock536 More on Order	Manufacturer: Infineon Technologies	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 750V	Current - Continuous Drain (Id) @ 25°C: 4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 70µA	Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 163pF @ 100V	FET Feature: -	Power Dissipation (Max): 5W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-SOT223	Package / Case: SOT-223-3
DMTH4008LFDFW-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 31V-40V U-DFN2020-	In Stock544 More on Order	Manufacturer: Diodes Incorporated	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 20V	FET Feature: -	Power Dissipation (Max): 990mW (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: U-DFN2020-6	Package / Case: 6-UDFN Exposed Pad
QS5U23TR	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.5A TSMT5	In Stock576 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 200mOhm @ 1.5A, 4.5V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 1.25W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TSMT5	Package / Case: SOT-23-5 Thin, TSOT-23-5
QS5U26TR	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.5A TSMT5	In Stock198 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 200mOhm @ 1.5A, 4.5V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 1.25W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TSMT5	Package / Case: SOT-23-5 Thin, TSOT-23-5
RTQ025P02TR	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2.5A TSMT6	In Stock475 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 4.5V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.25W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TSMT6 (SC-95)	Package / Case: SOT-23-6 Thin, TSOT-23-6
AOD4186	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 10A TO252	In Stock452 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.7V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 50W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252, (D-Pak)	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
DMN6069SFG-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 5.6A POWERDI333	In Stock348 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 30V	FET Feature: -	Power Dissipation (Max): 930mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8	Package / Case: 8-PowerVDFN
SIHLL110TR-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single POWER MOSFET N-CH SOT-223	In Stock258 More on Order	Manufacturer: Vishay Siliconix	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
NVMFS5C682NLAFT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 8.8A 25A 5DFN	In Stock477 More on Order	Manufacturer: ON Semiconductor	Series: Automotive, AEC-Q101	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2V @ 16µA	Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.5W (Ta), 28W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN, 5 Leads
SI3465DV-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3A 6-TSOP	In Stock527 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 1.14W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 6-TSOP	Package / Case: SOT-23-6 Thin, TSOT-23-6