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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 411/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
DKI10751	Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 15A TO-252	In Stock218 More on Order	Manufacturer: Sanken	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 70.4mOhm @ 7.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15.8nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V	FET Feature: -	Power Dissipation (Max): 32W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-252	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
AO4403	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 6A 8SOIC	In Stock665 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V	Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V	Vgs(th) (Max) @ Id: 1.3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 1128pF @ 15V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
AO4459	Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 6.5A 8SOIC	In Stock190 More on Order	Manufacturer: Alpha & Omega Semiconductor Inc.	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 46mOhm @ 6.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
SISA16DN-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V D-S PPAK 1212-8	In Stock321 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 16A (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® 1212-8	Package / Case: PowerPAK® 1212-8
NVC6S5A444NLZT1G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 4.5A CPH6	In Stock664 More on Order	Manufacturer: ON Semiconductor	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
NVC6S5A444NLZT2G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 4.5A CPH6	In Stock567 More on Order	Manufacturer: ON Semiconductor	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
DMP4025SFG-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 4.65A POWERDI	In Stock300 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 4.65A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 1.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1643pF @ 20V	FET Feature: -	Power Dissipation (Max): 810mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8	Package / Case: 8-PowerVDFN
BSL802SNH6327XTSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 7.5A 6TSOP	In Stock196 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V	Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 2.5V	Vgs(th) (Max) @ Id: 0.75V @ 30µA	Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 2.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 1347pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TSOP-6-6	Package / Case: SOT-23-6 Thin, TSOT-23-6
BSL302SNH6327XTSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 7.1A 6TSOP	In Stock250 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V	Vgs(th) (Max) @ Id: 2V @ 30µA	Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TSOP-6-6	Package / Case: SOT-23-6 Thin, TSOT-23-6
DMT6017LFV-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 41V-60V POWERDI333	In Stock258 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 65V	Current - Continuous Drain (Id) @ 25°C: 36A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 891pF @ 30V	FET Feature: -	Power Dissipation (Max): 2.12W (Ta), 39.06W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8	Package / Case: 8-PowerVDFN
DMT6015LFV-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET NCH 60V 9.5A POWERDI	In Stock611 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 30V	FET Feature: -	Power Dissipation (Max): 2.2W (Ta), 30W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8 (Type UX)	Package / Case: 8-PowerVDFN
DMT6015LFV-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET NCH 60V 9.5A POWERDI	In Stock463 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 30V	FET Feature: -	Power Dissipation (Max): 2.2W (Ta), 30W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8 (Type UX)	Package / Case: 8-PowerVDFN
MCH6336-TL-H	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 5A MCPH6	In Stock284 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 4.5V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 6V	FET Feature: -	Power Dissipation (Max): 1.5W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 6-MCPH	Package / Case: 6-SMD, Flat Leads
IPC60R3K3C6X1SA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH BARE DIE	In Stock328 More on Order	Manufacturer: Infineon Technologies	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
TPCC8093,L1Q	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single X35 PB-F POWER MOSFET TRANSISTOR	In Stock571 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSVII	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 21A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 500µA	Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.9W (Ta), 30W (Tc)	Operating Temperature: 150°C	Mounting Type: Surface Mount	Supplier Device Package: 8-TSON Advance (3.3x3.3)	Package / Case: 8-PowerVDFN
NTMFS4C06NT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 69A SO8FL	In Stock402 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 2.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V	FET Feature: -	Power Dissipation (Max): 770mW (Ta), 30.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 5-DFN (5x6) (8-SOFL)	Package / Case: 8-PowerTDFN
TSM120NA03CR RLG	Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 39A 8PDFN	In Stock232 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 39A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 11.7mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 15V	FET Feature: -	Power Dissipation (Max): 33W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-PDFN (5x6)	Package / Case: 8-PowerTDFN
BSL303SPEH6327XTSA1	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 6.3A TSOP-6	In Stock268 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 33mOhm @ 6.3A, 10V	Vgs(th) (Max) @ Id: 2V @ 30µA	Gate Charge (Qg) (Max) @ Vgs: 20.9nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1401pF @ 15V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TSOP-6-6	Package / Case: SOT-23-6 Thin, TSOT-23-6
NTMFS4C09NBT3G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V SO8FL	In Stock652 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V	FET Feature: -	Power Dissipation (Max): 760mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: -	Package / Case: -
TSM088NA03CR RLG	Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 61A 8PDFN	In Stock433 More on Order	Manufacturer: Taiwan Semiconductor Corporation	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 61A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V	FET Feature: -	Power Dissipation (Max): 56W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-PDFN (5x6)	Package / Case: 8-PowerTDFN
DMP2010UFV-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 50A POWERDI3333	In Stock280 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 9.5mOhm @ 3.6A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8	Package / Case: 8-PowerVDFN
DMP2010UFV-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 50A POWERDI3333	In Stock471 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 9.5mOhm @ 3.6A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 10V	FET Feature: -	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8	Package / Case: 8-PowerVDFN
QS5U16TR	Rohm Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 2A TSMT5	In Stock475 More on Order	Manufacturer: Rohm Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 10V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 900mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TSMT5	Package / Case: SOT-23-5 Thin, TSOT-23-5
DMT2004UFV-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 8V-24V POWERDI3333	In Stock490 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 24V	Current - Continuous Drain (Id) @ 25°C: 70A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V	Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 1.45V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 53.7nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8 (Type UX)	Package / Case: 8-PowerVDFN
DMT2004UFV-7	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 8V-24V POWERDI3333	In Stock480 More on Order	Manufacturer: Diodes Incorporated	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 24V	Current - Continuous Drain (Id) @ 25°C: 70A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V	Rds On (Max) @ Id, Vgs: 5mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 1.45V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 53.7nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerDI3333-8 (Type UX)	Package / Case: 8-PowerVDFN
CEDM7004 BK	Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 1.78A SOT-883	In Stock476 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 1.78A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.79nC @ 4.5V	Vgs (Max): 8V	Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V	FET Feature: -	Power Dissipation (Max): 100mW (Ta)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-883	Package / Case: SC-101, SOT-883
CEDM8004 BK	Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 0.45A SOT883	In Stock205 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V	Vgs(th) (Max) @ Id: 1.1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 0.88nC @ 4.5V	Vgs (Max): 8V	Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V	FET Feature: -	Power Dissipation (Max): 100mW (Ta)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-883	Package / Case: SC-101, SOT-883
DMP3013SFK-13	Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET BVDSS: 25V-30V U-DFN2523-	In Stock131 More on Order	Manufacturer: Diodes Incorporated	Series: *	FET Type: -	Technology: -	Drain to Source Voltage (Vdss): -	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: -	Supplier Device Package: -	Package / Case: -
SI4829DY-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 2A 8-SOIC	In Stock441 More on Order	Manufacturer: Vishay Siliconix	Series: LITTLE FOOT®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 215mOhm @ 2.5A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 10V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 2W (Ta), 3.1W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
SIA438EDJ-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 6A PPAK SC70-6L	In Stock313 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V	Vgs(th) (Max) @ Id: 1.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.4W (Ta), 11.4W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SC-70-6 Single	Package / Case: PowerPAK® SC-70-6