Bipolar (BJT) - Single

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single

Records 13,715

Page 191/458

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
JAN2N2218	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.8A TO39	In Stock373 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/251	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 30V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V	Power - Max: 800mW	Frequency - Transition: -	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39 (TO-205AD)
2N6430	Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single THROUGH-HOLE TRANSISTOR-SMALL SI	In Stock589 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 200V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V	Power - Max: 1.8W	Frequency - Transition: 50MHz	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18
BCX22	Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single THROUGH-HOLE TRANSISTOR-SMALL SI	In Stock570 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): 125V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V	Power - Max: -	Frequency - Transition: 50MHz	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18
BCX23	Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single THROUGH-HOLE TRANSISTOR-SMALL SI	In Stock246 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): 125V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V	Power - Max: -	Frequency - Transition: 50MHz	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18
2N4104	Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANSISTOR-SMALL SI SMD	In Stock445 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 50mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 1400 @ 1mA, 5V	Power - Max: 30mW	Frequency - Transition: 540MHz	Operating Temperature: -	Mounting Type: Surface Mount	Package / Case: Die	Supplier Device Package: Die
2N2907AE4	Microsemi	Transistors - Bipolar (BJT) - Single DIE TRANS PNP MED PWR GEN PURP T	In Stock485 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18
2N2907AL	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A TO-18	In Stock334 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18
JANTXV2N2222A	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A	In Stock237 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/255	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18 (TO-206AA)
JAN2N2906A	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A TO18	In Stock367 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/291	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18
JAN2N2907AL	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A 4UA	In Stock373 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/291	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: 4-SMD, No Lead	Supplier Device Package: UA
JAN2N3700	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 1A	In Stock463 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/391	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA	Current - Collector Cutoff (Max): 10nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18
2N1131	Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single THROUGH-HOLE TRANSISTOR-SMALL SI	In Stock256 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA	Current - Collector Cutoff (Max): 100µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V	Power - Max: 2W	Frequency - Transition: 50MHz	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39
2N1131A	Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single THROUGH-HOLE TRANSISTOR-SMALL SI	In Stock348 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): 40V	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): 500nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V	Power - Max: -	Frequency - Transition: 90MHz	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39
2N1131B	Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single THROUGH-HOLE TRANSISTOR-SMALL SI	In Stock310 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Power - Max: -	Frequency - Transition: -	Operating Temperature: -	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39
2N3055	Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single THROUGH-HOLE TRANSISTOR-SMALL SI	In Stock417 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 15A	Voltage - Collector Emitter Breakdown (Max): 70V	Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A	Current - Collector Cutoff (Max): 700µA	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V	Power - Max: 115W	Frequency - Transition: 2.5MHz	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-204AA, TO-3	Supplier Device Package: TO-3
JANTX2N2218	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.8A TO39	In Stock348 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/251	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 30V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V	Power - Max: 800mW	Frequency - Transition: -	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39 (TO-205AD)
2N3053A	Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single THROUGH-HOLE TRANSISTOR-SMALL SI	In Stock398 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 700mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA	Current - Collector Cutoff (Max): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V	Power - Max: 5W	Frequency - Transition: 100MHz	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39
JANTXV2N2907A	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A TO18	In Stock250 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/291	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18
NJVMJD44H11D3T4G	ON Semiconductor	Transistors - Bipolar (BJT) - Single IC TRANS NPN 80V 8A DPAK-3	In Stock520 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 8A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A	Current - Collector Cutoff (Max): 1μA	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V	Power - Max: 20W	Frequency - Transition: 85MHz	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Supplier Device Package: DPAK
NJVMJD45H11D3T4G	ON Semiconductor	Transistors - Bipolar (BJT) - Single IC TRANS PNP 80V 8A DPAK-3	In Stock290 More on Order	Manufacturer: ON Semiconductor	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 8A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A	Current - Collector Cutoff (Max): 1μA	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V	Power - Max: 20W	Frequency - Transition: 90MHz	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Supplier Device Package: DPAK
JANTX2N2369A	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 15V TO18	In Stock246 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/317	Transistor Type: NPN	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): 15V	Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA	Current - Collector Cutoff (Max): 400nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V	Power - Max: 360mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18 (TO-206AA)
JANTX2N2905A	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A	In Stock465 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/290	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 1μA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 800mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39 (TO-205AD)
JANTXV2N2218	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.8A TO39	In Stock298 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/251	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 30V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V	Power - Max: 800mW	Frequency - Transition: -	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39 (TO-205AD)
2N2481	Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR	In Stock184 More on Order	Manufacturer: Microsemi Corporation	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Power - Max: -	Frequency - Transition: -	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
2N930	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 45V 0.03A TO18	In Stock488 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 30mA	Voltage - Collector Emitter Breakdown (Max): 45V	Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 10mA	Current - Collector Cutoff (Max): 2nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V	Power - Max: 300mW	Frequency - Transition: -	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18 (TO-206AA)
JANTXV2N3700	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 1A	In Stock438 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/391	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA	Current - Collector Cutoff (Max): 10nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18 (TO-206AA)
JANTX2N2222AUB	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A	In Stock519 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/255	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: 3-SMD, No Lead	Supplier Device Package: UB
2N4399	Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 30A TO-3	In Stock572 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 30A	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A	Current - Collector Cutoff (Max): 5mA	DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V	Power - Max: 5W	Frequency - Transition: 4MHz	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-204AA, TO-3	Supplier Device Package: TO-3
ZTX415STZ	Diodes Incorporated	Transistors - Bipolar (BJT) - Single TRANS NPN 100V 0.5A E-LINE	In Stock257 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN - Avalanche Mode	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 10mA, 10V	Power - Max: 680mW	Frequency - Transition: 40MHz	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Package / Case: E-Line-3, Formed Leads	Supplier Device Package: E-Line (TO-92 compatible)
JAN2N2369A	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 15V TO18	In Stock425 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/317	Transistor Type: NPN	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): 15V	Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA	Current - Collector Cutoff (Max): 400nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V	Power - Max: 360mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18