Bipolar (BJT) - Single

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single

Records 13,715

Page 192/458

Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2N5885	Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 25A TO-3	In Stock377 More on Order	Manufacturer: Central Semiconductor Corp	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 25A	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 4V @ 6.25A, 25A	Current - Collector Cutoff (Max): 2mA	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10A, 4V	Power - Max: 200W	Frequency - Transition: 4MHz	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-204AA, TO-3	Supplier Device Package: TO-3
ZTX415	Diodes Incorporated	Transistors - Bipolar (BJT) - Single TRANS NPN 100V 0.5A E-LINE	In Stock617 More on Order	Manufacturer: Diodes Incorporated	Series: -	Transistor Type: NPN - Avalanche Mode	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 10mA, 10V	Power - Max: 680mW	Frequency - Transition: 40MHz	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: E-Line-3	Supplier Device Package: E-Line (TO-92 compatible)
BUT70W	STMicroelectronics	Transistors - Bipolar (BJT) - Single TRANS NPN 125V 32A TO-247	In Stock533 More on Order	Manufacturer: STMicroelectronics	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 32A	Voltage - Collector Emitter Breakdown (Max): 125V	Vce Saturation (Max) @ Ib, Ic: 900mV @ 7A, 70A	Current - Collector Cutoff (Max): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Power - Max: 200W	Frequency - Transition: -	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-247-3	Supplier Device Package: TO-247-3
JANTX2N2907AUB	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A	In Stock566 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/291	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: 4-SMD, No Lead	Supplier Device Package: UB
JAN2N720A	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 0.5A TO-18	In Stock552 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/182	Transistor Type: NPN	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18 (TO-206AA)
2N5581	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A TO46	In Stock469 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AB, TO-46-3 Metal Can	Supplier Device Package: TO-46 (TO-206AB)
2N5582	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A TO-46	In Stock482 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AB, TO-46-3 Metal Can	Supplier Device Package: TO-46-3
JAN2N5581	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A TO46	In Stock493 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/423	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AB, TO-46-3 Metal Can	Supplier Device Package: TO-46 (TO-206AB)
2N2222AL	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A TO-18	In Stock596 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18
JANTX2N4033	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 80V 1A TO39	In Stock519 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/512	Transistor Type: PNP	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 800mW	Frequency - Transition: -	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39
2N2221AUB	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A	In Stock576 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: 3-SMD, Flat Leads	Supplier Device Package: 3-SMD
JAN2N2222AL	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A	In Stock446 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/255	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18 (TO-206AA)
2N2906AUB	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A	In Stock308 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: 3-SMD, No Lead	Supplier Device Package: UB
2N4033	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 80V 1A TO-39	In Stock421 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: PNP	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V	Power - Max: 800mW	Frequency - Transition: -	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39 (TO-205AD)
JANTXV2N2369A	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 15V TO18	In Stock602 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/317	Transistor Type: NPN	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): 15V	Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA	Current - Collector Cutoff (Max): 400nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V	Power - Max: 360mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-206AA (TO-18)
JANTXV2N2907AUB	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A 4UB	In Stock141 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/291	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: 4-SMD, No Lead	Supplier Device Package: UB
2N3469	Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS	In Stock319 More on Order	Manufacturer: Microsemi Corporation	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Power - Max: -	Frequency - Transition: -	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
JAN2N5582	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A TO46	In Stock404 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/423	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -55°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AB, TO-46-3 Metal Can	Supplier Device Package: TO-46-3
JANTX2N3499	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 100V 0.5A TO-39	In Stock507 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/366	Transistor Type: NPN	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 100V	Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AD, TO-39-3 Metal Can	Supplier Device Package: TO-39 (TO-205AD)
2N3057A	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 1A TO-46	In Stock416 More on Order	Manufacturer: Microsemi Corporation	Series: -	Transistor Type: NPN	Current - Collector (Ic) (Max): 1A	Voltage - Collector Emitter Breakdown (Max): 80V	Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA	Current - Collector Cutoff (Max): 10nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AB, TO-46-3 Metal Can	Supplier Device Package: TO-46-3
JANTXV2N2222AUB	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A	In Stock348 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/255	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: 3-SMD, No Lead	Supplier Device Package: UB
2N2218A	Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR	In Stock392 More on Order	Manufacturer: Microsemi Corporation	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Power - Max: -	Frequency - Transition: -	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
JAN2N2221AUB	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.8A	In Stock576 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/255	Transistor Type: NPN	Current - Collector (Ic) (Max): 800mA	Voltage - Collector Emitter Breakdown (Max): 50V	Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Surface Mount	Package / Case: 3-SMD, No Lead	Supplier Device Package: UB
2N4150S	Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR	In Stock205 More on Order	Manufacturer: Microsemi Corporation	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Power - Max: -	Frequency - Transition: -	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
2N5010	Microsemi	Transistors - Bipolar (BJT) - Single NPN SILICON TRANSISTOR	In Stock384 More on Order	Manufacturer: Microsemi Corporation	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Power - Max: -	Frequency - Transition: -	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
JAN2N3501L	Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 150V 0.3A	In Stock294 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/366	Transistor Type: NPN	Current - Collector (Ic) (Max): 300mA	Voltage - Collector Emitter Breakdown (Max): 150V	Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA	Current - Collector Cutoff (Max): 10µA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 1W	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-205AA, TO-5-3 Metal Can	Supplier Device Package: TO-5
JANTXV2N2906A	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A TO18	In Stock501 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/291	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18
JANTXV2N2907AL	Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A TO18	In Stock351 More on Order	Manufacturer: Microsemi Corporation	Series: Military, MIL-PRF-19500/291	Transistor Type: PNP	Current - Collector (Ic) (Max): 600mA	Voltage - Collector Emitter Breakdown (Max): 60V	Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA	Current - Collector Cutoff (Max): 50nA	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V	Power - Max: 500mW	Frequency - Transition: -	Operating Temperature: -65°C ~ 200°C (TJ)	Mounting Type: Through Hole	Package / Case: TO-206AA, TO-18-3 Metal Can	Supplier Device Package: TO-18
2N5321	Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR	In Stock262 More on Order	Manufacturer: Microsemi Corporation	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Power - Max: -	Frequency - Transition: -	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
HS2907A	Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR	In Stock235 More on Order	Manufacturer: Microsemi Corporation	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Power - Max: -	Frequency - Transition: -	Operating Temperature: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -