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2N2907AE4
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2N2907AE4


Part Number 2N2907AE4
Zouser Part # 2N2907AE4
Manufacturer Microsemi
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description DIE TRANS PNP MED PWR GEN PURP T
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models 2N2907AE4 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock485 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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2N2907AE4 Specifications

Part Number 2N2907AE4
Brand Microsemi
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer Microsemi Corporation
Series -
Transistor Type PNP
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 500mW
Frequency - Transition -
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18

2N2907AE4 Documents

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