FETs, MOSFETs - Single

Manufacturer

Reset

Series

Reset

FET Type

Reset

Technology

Reset

Drain to Source Voltage (Vdss)

Reset

Current - Continuous Drain (Id) @ 25°C

Reset

Drive Voltage (Max Rds On, Min Rds On)

Reset

Rds On (Max) @ Id, Vgs

Reset

Vgs(th) (Max) @ Id

Reset

Gate Charge (Qg) (Max) @ Vgs

Reset

Vgs (Max)

Reset

Input Capacitance (Ciss) (Max) @ Vds

Reset

FET Feature

Reset

Power Dissipation (Max)

Reset

Operating Temperature

Reset

Mounting Type

Reset

Supplier Device Package

Reset

Package / Case

Reset

Show Filters

Reset Filters

Apply Filters

CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 992/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
PHB95NQ04LT,118	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A D2PAK	In Stock371 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 32.7nC @ 5V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V	FET Feature: -	Power Dissipation (Max): 157W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PHD110NQ03LT,118	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 75A DPAK	In Stock405 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V	FET Feature: -	Power Dissipation (Max): 115W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
PHD14NQ20T,118	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 14A DPAK	In Stock440 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 14A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 230mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V	FET Feature: -	Power Dissipation (Max): 125W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
PHD16N03LT,118	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 16A DPAK	In Stock375 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 16A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 67mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 30V	FET Feature: -	Power Dissipation (Max): 32.6W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
PHD21N06LT,118	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 19A DPAK	In Stock321 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 19A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 5V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V	FET Feature: -	Power Dissipation (Max): 56W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
PHD22NQ20T,118	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 21.1A DPAK	In Stock530 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 21.1A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 30.8nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
PHD23NQ10T,118	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 23A DPAK	In Stock385 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 23A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 70mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1187pF @ 25V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
PHD45N03LTA,118	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 40A DPAK	In Stock529 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 40A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V	Rds On (Max) @ Id, Vgs: 21mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V	FET Feature: -	Power Dissipation (Max): 65W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
PHD55N03LTA,118	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 55A DPAK	In Stock204 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 55A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V	FET Feature: -	Power Dissipation (Max): 85W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
PHD63NQ03LT,118	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 68.9A DPAK	In Stock245 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 68.9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 13mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V	FET Feature: -	Power Dissipation (Max): 111W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
PHD66NQ03LT,118	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 66A DPAK	In Stock685 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 66A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 10.5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V	FET Feature: -	Power Dissipation (Max): 93W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
PHD78NQ03LT,118	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 75A DPAK	In Stock536 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 12V	FET Feature: -	Power Dissipation (Max): 107W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
PHD96NQ03LT,118	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 75A DPAK	In Stock306 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 4.95mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V	FET Feature: -	Power Dissipation (Max): 115W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
PHD98N03LT,118	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 75A DPAK	In Stock474 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 20V	FET Feature: -	Power Dissipation (Max): 111W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DPAK	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
PHK12NQ10T,518	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 11.6A SOT96-1	In Stock421 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1965pF @ 25V	FET Feature: -	Power Dissipation (Max): 8.9W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
PHK4NQ10T,518	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V SOT96-1	In Stock492 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -65°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
PHK4NQ20T,518	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 4A SOT96-1	In Stock527 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 25V	FET Feature: -	Power Dissipation (Max): 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
PHM12NQ20T,518	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 14.4A 8HVSON	In Stock493 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 14.4A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 25V	FET Feature: -	Power Dissipation (Max): 62.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-HVSON (6x5)	Package / Case: 8-VDFN Exposed Pad
PHM15NQ20T,518	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 17.5A 8HVSON	In Stock458 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 30V	FET Feature: -	Power Dissipation (Max): 62.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-HVSON (6x5)	Package / Case: 8-VDFN Exposed Pad
PHM18NQ15T,518	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 19A SOT685-1	In Stock178 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 19A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V	FET Feature: -	Power Dissipation (Max): 62.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-HVSON (6x5)	Package / Case: 8-VDFN Exposed Pad
PHM21NQ15T,518	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 22.2A 8HVSON	In Stock606 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 22.2A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 55mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 36.2nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 25V	FET Feature: -	Power Dissipation (Max): 62.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-HVSON (6x5)	Package / Case: 8-VDFN Exposed Pad
PHM25NQ10T,518	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 30.7A 8HVSON	In Stock418 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 30.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 26.6nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 20V	FET Feature: -	Power Dissipation (Max): 62.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-HVSON (6x5)	Package / Case: 8-VDFN Exposed Pad
PHM30NQ10T,518	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 37.6A 8HVSON	In Stock460 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 37.6A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 53.7nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V	FET Feature: -	Power Dissipation (Max): 62.5W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-HVSON (6x5)	Package / Case: 8-VDFN Exposed Pad
PHP101NQ03LT,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 75A TO220AB	In Stock409 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V	FET Feature: -	Power Dissipation (Max): 166W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
PHP101NQ04T,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A TO220AB	In Stock213 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V	FET Feature: -	Power Dissipation (Max): 157W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
PHP110NQ06LT,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 75A TO220AB	In Stock543 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 5V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 3960pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
PHP112N06T,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 75A TO220AB	In Stock351 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4352pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
PHP119NQ06T,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 75A TO220AB	In Stock288 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 7.1mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2820pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
PHP129NQ04LT,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A TO220AB	In Stock649 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 44.2nC @ 5V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
PHP143NQ04T,127	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 75A TO220AB	In Stock412 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V	FET Feature: -	Power Dissipation (Max): 200W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3