FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 916/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
2N6660-2	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.99A TO-205	In Stock476 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-205AD (TO-39)	Package / Case: TO-205AD, TO-39-3 Metal Can
2N6660-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 990MA TO-205	In Stock558 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-205AD (TO-39)	Package / Case: TO-205AD, TO-39-3 Metal Can
2N6660JTVP02	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.99A TO-205	In Stock368 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-205AD (TO-39)	Package / Case: TO-205AD, TO-39-3 Metal Can
2N6660JTX02	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.99A TO-205	In Stock328 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-205AD (TO-39)	Package / Case: TO-205AD, TO-39-3 Metal Can
2N6660JTXL02	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.99A TO-205	In Stock263 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-205AD (TO-39)	Package / Case: TO-205AD, TO-39-3 Metal Can
2N6660JTXP02	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.99A TO-205	In Stock399 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-205AD (TO-39)	Package / Case: TO-205AD, TO-39-3 Metal Can
2N6660JTXV02	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.99A TO-205	In Stock415 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-205AD (TO-39)	Package / Case: TO-205AD, TO-39-3 Metal Can
2N6661	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 0.86A TO-205	In Stock423 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 90V	Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-39	Package / Case: TO-205AD, TO-39-3 Metal Can
2N6661-2	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 0.86A TO-205	In Stock297 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 90V	Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-39	Package / Case: TO-205AD, TO-39-3 Metal Can
2N6661-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 0.86A TO-205	In Stock336 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 90V	Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-39	Package / Case: TO-205AD, TO-39-3 Metal Can
2N6661JAN02	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 0.86A TO-205	In Stock327 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 90V	Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-39	Package / Case: TO-205AD, TO-39-3 Metal Can
2N6661JTVP02	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 0.86A TO-205	In Stock493 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 90V	Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-39	Package / Case: TO-205AD, TO-39-3 Metal Can
2N6661JTX02	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 0.86A TO-205	In Stock273 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 90V	Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-39	Package / Case: TO-205AD, TO-39-3 Metal Can
2N6661JTXL02	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 0.86A TO-205	In Stock205 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 90V	Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-39	Package / Case: TO-205AD, TO-39-3 Metal Can
2N6661JTXP02	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 0.86A TO-205	In Stock588 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 90V	Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-39	Package / Case: TO-205AD, TO-39-3 Metal Can
2N6661JTXV02	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 90V 0.86A TO-205	In Stock364 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 90V	Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V	FET Feature: -	Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-39	Package / Case: TO-205AD, TO-39-3 Metal Can
3N163	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 50MA TO-72	In Stock548 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 20V	Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V	Vgs(th) (Max) @ Id: 5V @ 10µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V	FET Feature: -	Power Dissipation (Max): 375mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-72	Package / Case: TO-206AF, TO-72-4 Metal Can
3N163-2	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 50MA TO-72	In Stock503 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 20V	Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V	Vgs(th) (Max) @ Id: 5V @ 10µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V	FET Feature: -	Power Dissipation (Max): 375mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-72	Package / Case: TO-206AF, TO-72-4 Metal Can
3N163-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 50MA TO-72	In Stock426 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 20V	Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V	Vgs(th) (Max) @ Id: 5V @ 10µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V	FET Feature: -	Power Dissipation (Max): 375mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-72	Package / Case: TO-206AF, TO-72-4 Metal Can
3N164	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 50MA TO-206AF	In Stock233 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 20V	Rds On (Max) @ Id, Vgs: 300Ohm @ 100µA, 20V	Vgs(th) (Max) @ Id: 5V @ 10µA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V	FET Feature: -	Power Dissipation (Max): 375mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-72	Package / Case: TO-206AF, TO-72-4 Metal Can
IRFD113	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 800MA 4-DIP	In Stock439 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 800mOhm @ 800mA, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V	FET Feature: -	Power Dissipation (Max): 1W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: 4-DIP, Hexdip, HVMDIP	Package / Case: 4-DIP (0.300", 7.62mm)
IRFD213	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 450MA 4-DIP	In Stock290 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 2Ohm @ 270mA, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: 4-DIP, Hexdip, HVMDIP	Package / Case: 4-DIP (0.300", 7.62mm)
IRFD9123	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 1A 4-DIP	In Stock411 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: 4-DIP, Hexdip, HVMDIP	Package / Case: 4-DIP (0.300", 7.62mm)
IRFP21N60L	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21A TO-247AC	In Stock427 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 21A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V	FET Feature: -	Power Dissipation (Max): 330W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
IRFP22N60K	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 22A TO-247AC	In Stock480 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 22A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 280mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3570pF @ 25V	FET Feature: -	Power Dissipation (Max): 370W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
IRFP26N60L	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 26A TO-247AC	In Stock514 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 250mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 5020pF @ 25V	FET Feature: -	Power Dissipation (Max): 470W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-247-3	Package / Case: TO-247-3
IRFPS38N60L	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 38A SUPER247	In Stock515 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 38A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 150mOhm @ 23A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 7990pF @ 25V	FET Feature: -	Power Dissipation (Max): 540W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: SUPER-247™ (TO-274AA)	Package / Case: TO-274AA
IRFPS40N60K	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 40A SUPER247	In Stock590 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 40A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 7970pF @ 25V	FET Feature: -	Power Dissipation (Max): 570W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: SUPER-247™ (TO-274AA)	Package / Case: TO-274AA
SI4752DY-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 25A 8-SO	In Stock430 More on Order	Manufacturer: Vishay Siliconix	Series: SkyFET®, TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 25A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V	FET Feature: Schottky Diode (Body)	Power Dissipation (Max): 3W (Ta), 6.25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
SI8809EDB-T2-E1	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.9A MICROFOOT	In Stock355 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V	Vgs(th) (Max) @ Id: 900mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-Microfoot	Package / Case: 4-XFBGA