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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 890/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TO-220AB |
In Stock366 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 180W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 2A SOT-223 |
In Stock598 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223 |
Package / Case: TO-261-4, TO-261AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 3.1A SOT-223 |
In Stock504 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-223 |
Package / Case: TO-261-4, TO-261AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 10A DPAK |
In Stock525 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 140mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 28W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-PAK (TO-252AA) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 10A DPAK |
In Stock244 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 48W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-PAK (TO-252AA) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 30A DPAK |
In Stock454 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 120W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-PAK (TO-252AA) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 25A DPAK |
In Stock443 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 37mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 57W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-PAK (TO-252AA) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 63A DPAK |
In Stock527 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 140W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 42A DPAK |
In Stock549 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 3810pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 140W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-PAK (TO-252AA) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 99A DPAK |
In Stock525 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 3779pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 143W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 61A DPAK |
In Stock422 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V |
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 120W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-PAK (TO-252AA) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 343A D2PAK |
In Stock236 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 10315pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 375W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 240A D2PAK-7P |
In Stock568 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 240A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 10990pF @ 40V |
FET Feature: - |
Power Dissipation (Max): 380W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK (7-Lead) |
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 270A D2PAK |
In Stock397 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 380W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 300A D2PAK-7P |
In Stock440 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 240A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 11270pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 380W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK (7-Lead) |
Package / Case: TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 42A D2PAK |
In Stock427 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 56A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 3617pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 143W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-PAK (TO-252AA) |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 180A D2PAK |
In Stock483 More on Order |
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Manufacturer: Infineon Technologies |
Series: Automotive, AEC-Q101, HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 11360pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 370W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 190A D2PAK-7P |
In Stock321 More on Order |
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Manufacturer: Infineon Technologies |
Series: Automotive, AEC-Q101, HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 190A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 110A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 11490pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 370W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK (7-Lead) |
Package / Case: TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 270A TO262 |
In Stock455 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V |
FET Feature: - |
Power Dissipation (Max): 380W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-262 |
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 42A IPAK |
In Stock477 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V |
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 110W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 63A IPAK |
In Stock495 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 140W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 51A TO-262 |
In Stock550 More on Order |
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Manufacturer: Infineon Technologies |
Series: - |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 51A D2PAK |
In Stock627 More on Order |
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Manufacturer: Infineon Technologies |
Series: - |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: - |
Package / Case: - |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 4.2A 8SOIC |
In Stock445 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 59A TO-220AB |
In Stock399 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 59A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250mA |
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 160W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N CH 40V 75A TO220AB |
In Stock167 More on Order |
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Manufacturer: Infineon Technologies |
Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 140W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-220AB |
Package / Case: TO-220-3 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 12A SC70-6L |
In Stock494 More on Order |
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Manufacturer: Vishay Siliconix |
Series: TrenchFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 15mOhm @ 12.4A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V |
Vgs (Max): ±8V |
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 1V |
FET Feature: - |
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PowerPAK® SC-70-6 Single |
Package / Case: PowerPAK® SC-70-6 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 4.1A DPAK |
In Stock433 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 83W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11.3A DPAK |
In Stock594 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V |
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2142pF @ 12V |
FET Feature: - |
Power Dissipation (Max): 1.4W (Ta), 68W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 10.3A SGL DPAK |
In Stock379 More on Order |
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Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 54A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |