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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 873/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
RJK0653DPB-00#J5
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 45A LFPAK

In Stock310

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 10V
FET Feature: -
Power Dissipation (Max): 65W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK
Package / Case: SC-100, SOT-669
RJK0654DPB-00#J5
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V LFPAK

In Stock217

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
FET Feature: -
Power Dissipation (Max): 55W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK
Package / Case: SC-100, SOT-669
RJK0851DPB-00#J5
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 20A LFPAK

In Stock576

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 10V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK
Package / Case: SC-100, SOT-669
RJK0852DPB-00#J5
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 30A LFPAK

In Stock446

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 10V
FET Feature: -
Power Dissipation (Max): 55W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK
Package / Case: SC-100, SOT-669
RJK0853DPB-00#J5
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 40A LFPAK

In Stock332

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6170pF @ 10V
FET Feature: -
Power Dissipation (Max): 65W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK
Package / Case: SC-100, SOT-669
RJK0854DPB-00#J5
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V LFPAK

In Stock336

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
FET Feature: -
Power Dissipation (Max): 55W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK
Package / Case: SC-100, SOT-669
RJK0856DPB-00#J5
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 35A LFPAK

In Stock283

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
FET Feature: -
Power Dissipation (Max): 65W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK
Package / Case: SC-100, SOT-669
RJK1051DPB-00#J5
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 15A LFPAK

In Stock619

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK
Package / Case: SC-100, SOT-669
RJK1052DPB-00#J5
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 20A LFPAK

In Stock499

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4160pF @ 10V
FET Feature: -
Power Dissipation (Max): 55W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK
Package / Case: SC-100, SOT-669
RJK1053DPB-00#J5
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 25A LFPAK

In Stock562

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6160pF @ 10V
FET Feature: -
Power Dissipation (Max): 65W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK
Package / Case: SC-100, SOT-669
RJK1055DPB-00#J5
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 23A LFPAK

In Stock349

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK
Package / Case: SC-100, SOT-669
RJK1555DPA-00#J0
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V W-PAK

In Stock139

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-WPAK
Package / Case: 8-PowerWDFN
RJK1557DPA-00#J0
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V W-PAK

In Stock605

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-WPAK
Package / Case: 8-PowerWDFN
RJK2055DPA-00#J0
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V W-PAK

In Stock555

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 69mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-WPAK
Package / Case: 8-PowerWDFN
RJK6024DPD-00#J2
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 0.4A MP3A

In Stock416

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 42Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 37.5pF @ 25V
FET Feature: -
Power Dissipation (Max): 27.2W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: MP-3A
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RJK6025DPD-00#J2
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 1A MP3A

In Stock394

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 17.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 37.5pF @ 25V
FET Feature: -
Power Dissipation (Max): 29.7W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: MP-3A
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
RJK0353DPA-01#J0B
Renesas Electronics America

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 35A 2WPACK

In Stock388

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Manufacturer: Renesas Electronics America
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 10V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-WPAK
Package / Case: 8-PowerWDFN
PI5101-01-LGIZ
Vicor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 5V 60A 3LGA

In Stock184

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Manufacturer: Vicor Corporation
Series: Picor® µRDS(on)FET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 5V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 4.5V
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 60A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
Vgs (Max): ±5V
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 5V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 3-LGA (4.1x8)
Package / Case: 3-FLGA
PSMN027-100XS,127
Nexperia

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 23.4A TO220F

In Stock389

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Manufacturer: Nexperia USA Inc.
Series: -
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 26.8mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1624pF @ 50V
FET Feature: -
Power Dissipation (Max): 41.1W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack, Isolated Tab
IPB45N04S4L08ATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 45A TO263-3-2

In Stock257

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Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 45A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 17µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 25V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPD100N06S403ATMA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 100A TO252-3-11

In Stock378

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Manufacturer: Infineon Technologies
Series: OptiMOS™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
BSS84PH6327XTSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 0.17A SOT23

In Stock440

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Manufacturer: Infineon Technologies
Series: SIPMOS®
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 25V
FET Feature: -
Power Dissipation (Max): 360mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
BUZ31HXKSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 14.5A TO220-3

In Stock274

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Manufacturer: Infineon Technologies
Series: SIPMOS®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 5V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V
FET Feature: -
Power Dissipation (Max): 95W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3
BUZ31L H
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 13.5A TO220-3

In Stock434

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Manufacturer: Infineon Technologies
Series: SIPMOS®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 200mOhm @ 7A, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
FET Feature: -
Power Dissipation (Max): 95W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3
BUZ73HXKSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 7A TO220-3

In Stock371

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Manufacturer: Infineon Technologies
Series: SIPMOS®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3
BUZ73H3046XKSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 5.5A TO220-3

In Stock603

More on Order

Manufacturer: Infineon Technologies
Series: SIPMOS®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3
BUZ73A H
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 5.5A TO220-3

In Stock316

More on Order

Manufacturer: Infineon Technologies
Series: SIPMOS®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3
BUZ73A H3046
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 5.5A TO220-3

In Stock474

More on Order

Manufacturer: Infineon Technologies
Series: SIPMOS®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3
BUZ73ALHXKSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 5.5A TO220-3

In Stock408

More on Order

Manufacturer: Infineon Technologies
Series: SIPMOS®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3
BUZ73LHXKSA1
Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 7A TO220-3

In Stock418

More on Order

Manufacturer: Infineon Technologies
Series: SIPMOS®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.5A, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 25V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3