FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

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Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SI7840BDP-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A PPAK SO-8	In Stock443 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 1.8W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
SI7840BDP-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A PPAK SO-8	In Stock295 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 1.8W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
SI7856ADP-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 15A PPAK SO-8	In Stock416 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 15A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 1.9W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
SI7856ADP-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 15A PPAK SO-8	In Stock485 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 15A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.7mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 1.9W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
SI7860ADP-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A PPAK SO-8	In Stock609 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9.5mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 1.8W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
SI7860DP-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A PPAK SO-8	In Stock490 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8mOhm @ 18A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 1.8W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
SI7866ADP-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 40A PPAK SO-8	In Stock433 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 40A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5415pF @ 10V	FET Feature: -	Power Dissipation (Max): 5.4W (Ta), 83W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
SI7882DP-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 12V 13A PPAK SO-8	In Stock280 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 13A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V	Vgs(th) (Max) @ Id: 1.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 1.9W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
SI7886ADP-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 15A PPAK SO-8	In Stock303 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 15A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.9W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
SI7886ADP-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 15A PPAK SO-8	In Stock326 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 15A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.9W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
SI7888DP-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 9.4A PPAK SO-8	In Stock184 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 12mOhm @ 12.4A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 1.8W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
SI7888DP-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 9.4A PPAK SO-8	In Stock333 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 12mOhm @ 12.4A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 1.8W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SO-8	Package / Case: PowerPAK® SO-8
SI8405DB-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 3.6A 2X2 4-MFP	In Stock362 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 55mOhm @ 1A, 4.5V	Vgs(th) (Max) @ Id: 950mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 1.47W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-Microfoot	Package / Case: 4-XFBGA, CSPBGA
SI8417DB-T2-E1	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 14.5A 2X2 6MFP	In Stock441 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 21mOhm @ 1A, 4.5V	Vgs(th) (Max) @ Id: 900mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 57nC @ 5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 6V	FET Feature: -	Power Dissipation (Max): 2.9W (Ta), 6.57W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 6-Micro Foot™ (1.5x1)	Package / Case: 6-MICRO FOOT®CSP
SI9410BDY-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6.2A 8SOIC	In Stock149 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 24mOhm @ 8.1A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 1.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
SI9424BDY-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 5.6A 8SOIC	In Stock197 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V	Vgs(th) (Max) @ Id: 850mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V	Vgs (Max): ±9V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 1.25W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
SI9434BDY-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.5A 8-SOIC	In Stock423 More on Order	Manufacturer: Vishay Siliconix	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 40mOhm @ 6.3A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 1.3W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
SIB411DK-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 9A PPAK SC75-6L	In Stock551 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 66mOhm @ 3.3A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V	FET Feature: -	Power Dissipation (Max): 2.4W (Ta), 13W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PowerPAK® SC-75-6L Single	Package / Case: PowerPAK® SC-75-6L
SIE726DF-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 60A POLARPAK	In Stock418 More on Order	Manufacturer: Vishay Siliconix	Series: SkyFET®, TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 15V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 10-PolarPAK® (L)	Package / Case: 10-PolarPAK® (L)
SIE800DF-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A POLARPAK	In Stock349 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7.2mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 10-PolarPAK® (S)	Package / Case: 10-PolarPAK® (S)
SIE804DF-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 37A POLARPAK	In Stock281 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 37A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 6V, 10V	Rds On (Max) @ Id, Vgs: 38mOhm @ 7.6A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 50V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 10-PolarPAK® (LH)	Package / Case: 10-PolarPAK® (LH)
SIE806DF-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 60A POLARPAK	In Stock248 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 15V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 10-PolarPAK® (L)	Package / Case: 10-PolarPAK® (L)
SIE816DF-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 60A POLARPAK	In Stock210 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 7.4mOhm @ 19.8A, 10V	Vgs(th) (Max) @ Id: 4.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 10-PolarPAK® (L)	Package / Case: 10-PolarPAK® (L)
SIE816DF-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 60A POLARPAK	In Stock226 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 7.4mOhm @ 19.8A, 10V	Vgs(th) (Max) @ Id: 4.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 10-PolarPAK® (L)	Package / Case: 10-PolarPAK® (L)
SIE830DF-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A POLARPAK	In Stock444 More on Order	Manufacturer: Vishay Siliconix	Series: WFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 10-PolarPAK® (S)	Package / Case: 10-PolarPAK® (S)
SIE836DF-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 18.3A POLARPAK	In Stock506 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 130mOhm @ 4.1A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 10-PolarPAK® (SH)	Package / Case: 10-PolarPAK® (SH)
SIE844DF-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 44.5A POLARPAK	In Stock382 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 44.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 12.1A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 10-PolarPAK® (U)	Package / Case: 10-PolarPAK® (U)
SIE844DF-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 44.5A POLARPAK	In Stock428 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 44.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 12.1A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 15V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 25W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 10-PolarPAK® (U)	Package / Case: 10-PolarPAK® (U)
SIE848DF-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 60A POLARPAK	In Stock466 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 15V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 10-PolarPAK® (L)	Package / Case: 10-PolarPAK® (L)
SIE854DF-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 60A POLARPAK	In Stock368 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 14.2mOhm @ 13.2A, 10V	Vgs(th) (Max) @ Id: 4.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 50V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 10-PolarPAK® (L)	Package / Case: 10-PolarPAK® (L)