FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 825/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFK60N25Q	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 60A TO-264AA	In Stock327 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 47mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V	FET Feature: -	Power Dissipation (Max): 360W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-264AA (IXFK)	Package / Case: TO-264-3, TO-264AA
IXFK80N20	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 80A TO-264AA	In Stock591 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 30mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V	FET Feature: -	Power Dissipation (Max): 360W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-264AA (IXFK)	Package / Case: TO-264-3, TO-264AA
IXFK80N20Q	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 80A TO-264AA	In Stock458 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 28mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V	FET Feature: -	Power Dissipation (Max): 360W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-264AA (IXFK)	Package / Case: TO-264-3, TO-264AA
IXFL34N100	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 30A ISOPLUS264	In Stock247 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 280mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 5V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V	FET Feature: -	Power Dissipation (Max): 550W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS264™	Package / Case: ISOPLUS264™
IXFL55N50	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 55A TO-264AA	In Stock316 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 55A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS264™	Package / Case: ISOPLUS264™
IXFN100N10S1	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A SOT-227B	In Stock550 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V	FET Feature: -	Power Dissipation (Max): 360W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227B	Package / Case: SOT-227-4, miniBLOC
IXFN100N10S2	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A SOT-227B	In Stock588 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V	FET Feature: -	Power Dissipation (Max): 360W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227B	Package / Case: SOT-227-4, miniBLOC
IXFN100N10S3	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 100A SOT-227B	In Stock259 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V	FET Feature: -	Power Dissipation (Max): 360W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227B	Package / Case: SOT-227-4, miniBLOC
IXFN100N25	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 100A SOT-227B	In Stock301 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 27mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V	FET Feature: -	Power Dissipation (Max): 600W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227B	Package / Case: SOT-227-4, miniBLOC
IXFN170N10	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 170A SOT-227B	In Stock487 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 170A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 515nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V	FET Feature: -	Power Dissipation (Max): 600W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227B	Package / Case: SOT-227-4, miniBLOC
IXFN180N07	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 70V 180A SOT-227B	In Stock249 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 70V	Current - Continuous Drain (Id) @ 25°C: 180A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V	FET Feature: -	Power Dissipation (Max): 520W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227B	Package / Case: SOT-227-4, miniBLOC
IXFN25N90	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 25A SOT-227B	In Stock461 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 25A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V	FET Feature: -	Power Dissipation (Max): 600W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227B	Package / Case: SOT-227-4, miniBLOC
IXFN340N06	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 340A SOT-227B	In Stock337 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 340A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 16800pF @ 25V	FET Feature: -	Power Dissipation (Max): 700W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227B	Package / Case: SOT-227-4, miniBLOC
IXFN34N100	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 34A SOT-227B	In Stock304 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 34A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 280mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5.5V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V	FET Feature: -	Power Dissipation (Max): 700W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227B	Package / Case: SOT-227-4, miniBLOC
IXFN44N50U2	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 44A SOT-227B	In Stock411 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 44A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 120mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V	FET Feature: -	Power Dissipation (Max): 520W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227B	Package / Case: SOT-227-4, miniBLOC
IXFN44N50U3	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 44A SOT-227B	In Stock487 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 44A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 120mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V	FET Feature: -	Power Dissipation (Max): 520W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227B	Package / Case: SOT-227-4, miniBLOC
IXFN48N50U2	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 48A SOT-227B	In Stock551 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 48A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V	FET Feature: -	Power Dissipation (Max): 520W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227B	Package / Case: SOT-227-4, miniBLOC
IXFN48N50U3	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 48A SOT-227B	In Stock544 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 48A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V	FET Feature: -	Power Dissipation (Max): 520W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227B	Package / Case: SOT-227-4, miniBLOC
IXFN48N55	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 550V 48A SOT-227B	In Stock386 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 550V	Current - Continuous Drain (Id) @ 25°C: 48A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V	FET Feature: -	Power Dissipation (Max): 600W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227B	Package / Case: SOT-227-4, miniBLOC
IXFN80N48	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 480V 80A SOT-227B	In Stock431 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 480V	Current - Continuous Drain (Id) @ 25°C: 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 9890pF @ 25V	FET Feature: -	Power Dissipation (Max): 700W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Chassis Mount	Supplier Device Package: SOT-227B	Package / Case: SOT-227-4, miniBLOC
IXFR100N25	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 87A ISOPLUS247	In Stock337 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 87A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS247™	Package / Case: ISOPLUS247™
IXFR150N15	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 105A ISOPLUS247	In Stock414 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 105A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 12.5mOhm @ 75A, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS247™	Package / Case: ISOPLUS247™
IXFR180N06	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 180A ISOPLUS247	In Stock685 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 180A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 25V	FET Feature: -	Power Dissipation (Max): 560W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS247™	Package / Case: ISOPLUS247™
IXFR180N07	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 70V 180A ISOPLUS247	In Stock471 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 70V	Current - Continuous Drain (Id) @ 25°C: 180A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 6mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V	FET Feature: -	Power Dissipation (Max): 417W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS247™	Package / Case: ISOPLUS247™
IXFR180N085	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 180A ISOPLUS247	In Stock501 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 85V	Current - Continuous Drain (Id) @ 25°C: 180A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS247™	Package / Case: ISOPLUS247™
IXFR25N90	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 25A ISOPLUS247	In Stock307 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 25A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS247™	Package / Case: ISOPLUS247™
IXFR30N50Q	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 30A ISOPLUS247	In Stock441 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 4V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 25V	FET Feature: -	Power Dissipation (Max): 310W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS247™	Package / Case: ISOPLUS247™
IXFR55N50	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 48A ISOPLUS247	In Stock152 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 48A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 90mOhm @ 27.5A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS247™	Package / Case: ISOPLUS247™
IXFR75N10Q	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V ISOPLUS247	In Stock371 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS247™	Package / Case: ISOPLUS247™
IXFR80N10Q	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 76A ISOPLUS247	In Stock498 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 76A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 15mOhm @ 76A, 10V	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V	FET Feature: -	Power Dissipation (Max): 310W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS247™	Package / Case: ISOPLUS247™