FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 813/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
TLC530TU	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 330V 7A TO-220	In Stock554 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 330V	Current - Continuous Drain (Id) @ 25°C: 7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: -	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
2SJ304(F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 14A TO220NIS	In Stock413 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 14A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 120mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V	FET Feature: -	Power Dissipation (Max): 40W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220NIS	Package / Case: TO-220-3 Full Pack
2SJ360(F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 1A SC-62	In Stock446 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 730mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PW-MINI	Package / Case: TO-243AA
2SJ360(TE12L,F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 1A SC-62	In Stock282 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 730mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 10V	FET Feature: -	Power Dissipation (Max): 500mW (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PW-MINI	Package / Case: TO-243AA
2SJ380(F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 12A TO220NIS	In Stock499 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 12A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V	FET Feature: -	Power Dissipation (Max): 35W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220NIS	Package / Case: TO-220-3 Full Pack
2SJ610(TE16L1,NQ)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 2A PW-MOLD	In Stock521 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.55Ohm @ 1A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 381pF @ 10V	FET Feature: -	Power Dissipation (Max): 20W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PW-MOLD	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
2SJ681(Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 5A PW-MOLD	In Stock554 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 170mOhm @ 2.5A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V	FET Feature: -	Power Dissipation (Max): 20W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PW-MOLD2	Package / Case: TO-251-3 Stub Leads, IPak
2SK1119(F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 4A TO-220AB	In Stock438 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 4A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.8Ohm @ 2A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
2SK2507(F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 25A TO220NIS	In Stock177 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 25A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 46mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V	FET Feature: -	Power Dissipation (Max): 30W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220NIS	Package / Case: TO-220-3 Full Pack
2SK2544(F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 6A TO-220AB	In Stock157 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V	FET Feature: -	Power Dissipation (Max): 80W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
2SK2744(F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 45A TO-3PN	In Stock509 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 45A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 10V	FET Feature: -	Power Dissipation (Max): 125W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P(N)	Package / Case: TO-3P-3, SC-65-3
2SK2845(TE16L1,Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 1A DP	In Stock296 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 1A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 9Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V	FET Feature: -	Power Dissipation (Max): 40W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DP	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
2SK2866(F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A TO-220AB	In Stock569 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 10A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V	FET Feature: -	Power Dissipation (Max): 125W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
2SK2883(TE24L,Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 3A TO220SM	In Stock589 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V	FET Feature: -	Power Dissipation (Max): 75W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-220SM	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
2SK3313(Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 12A TO220NIS	In Stock572 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 12A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 620mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V	FET Feature: -	Power Dissipation (Max): 40W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220NIS	Package / Case: TO-220-3 Full Pack
2SK3342(TE16L1,NQ)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 4.5A PW-MOLD	In Stock293 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 10V	FET Feature: -	Power Dissipation (Max): 20W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PW-MOLD	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
2SK3388(TE24L,Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 20A SC-97	In Stock197 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 20A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V	FET Feature: -	Power Dissipation (Max): 125W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-TFP (9.2x9.2)	Package / Case: SC-97
2SK3403(Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 450V 13A TO220FL	In Stock257 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 450V	Current - Continuous Drain (Id) @ 25°C: 13A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220FL	Package / Case: TO-220-3, Short Tab
2SK3462(TE16L1,NQ)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 3A PW-MOLD	In Stock526 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.7Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 267pF @ 10V	FET Feature: -	Power Dissipation (Max): 20W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PW-MOLD	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
2SK3466(TE24L,Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 5A SC-97	In Stock254 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 4-TFP (9.2x9.2)	Package / Case: SC-97
2SK3662(F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 35A TO220NIS	In Stock245 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSIII	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 35A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 12.5mOhm @ 18A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 10V	FET Feature: -	Power Dissipation (Max): 35W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220NIS	Package / Case: TO-220-3 Full Pack
2SK3844(Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 45A TO220NIS	In Stock485 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 45A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.8mOhm @ 23A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 10V	FET Feature: -	Power Dissipation (Max): 45W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220NIS	Package / Case: TO-220-3 Full Pack
2SK3868(Q,M)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 5A TO220SIS	In Stock357 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V	FET Feature: -	Power Dissipation (Max): 35W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220SIS	Package / Case: TO-220-3 Full Pack
2SK3906(Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO-3PN	In Stock463 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 20A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 25V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P(N)	Package / Case: TO-3P-3, SC-65-3
2SK4016(Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 13A TO220SIS	In Stock504 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 13A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 500mOhm @ 6.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V	FET Feature: -	Power Dissipation (Max): 50W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220SIS	Package / Case: TO-220-3 Full Pack
2SK4017(Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 5A PW-MOLD2	In Stock113 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSIII	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4V, 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V	FET Feature: -	Power Dissipation (Max): 20W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PW-MOLD2	Package / Case: TO-251-3 Stub Leads, IPak
2SK4021(Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 4.5A PW-MOLD2	In Stock218 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 10V	FET Feature: -	Power Dissipation (Max): 20W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PW-MOLD2	Package / Case: TO-251-3 Stub Leads, IPak
TPC8026(TE12L,Q,M)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13A 8-SOIC	In Stock345 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 13A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.6mOhm @ 6.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP (5.5x6.0)	Package / Case: 8-SOIC (0.173", 4.40mm Width)
TPC8036-H(TE12L,QM	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 18A 8-SOIC	In Stock365 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSVI-H	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 18A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.5mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 10V	FET Feature: -	Power Dissipation (Max): 1W (Ta)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP (5.5x6.0)	Package / Case: 8-SOIC (0.173", 4.40mm Width)
TPCA8025(TE12L,Q,M	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 40A 8SOIC ADV	In Stock220 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: U-MOSIV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 40A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.6W (Ta), 45W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOP Advance (5x5)	Package / Case: 8-PowerVDFN