FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 793/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDS5692Z	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 5.8A 8-SOIC	In Stock224 More on Order	Manufacturer: ON Semiconductor	Series: UltraFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
FDS8670	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 21A 8-SOIC	In Stock319 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 21A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.7mOhm @ 21A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
FDS8874	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 16A 8-SOIC	In Stock569 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 16A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3990pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
FQB9N50CFTM_WS	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 9A D2PAK	In Stock163 More on Order	Manufacturer: ON Semiconductor	Series: FRFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V	FET Feature: -	Power Dissipation (Max): 173W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D²PAK (TO-263AB)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
64-2096PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 160A D2PAK-7	In Stock321 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 160A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 3.8mOhm @ 110A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7580pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK (7-Lead)	Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
IRF6674TR1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 13.4A DIRECTFET	In Stock256 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V	Vgs(th) (Max) @ Id: 4.9V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.6W (Ta), 89W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ MZ	Package / Case: DirectFET™ Isometric MZ
IRF6710S2TR1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 12A DIRECTFET	In Stock387 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 37A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.9mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 13V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta), 15W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET S1	Package / Case: DirectFET™ Isometric S1
IRF6712STR1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 17A DIRECTFET	In Stock342 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.9mOhm @ 17A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V	FET Feature: -	Power Dissipation (Max): 2.2W (Ta), 36W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ SQ	Package / Case: DirectFET™ Isometric SQ
IRF6714MTR1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 29A DIRECTFET	In Stock234 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 166A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.1mOhm @ 29A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3890pF @ 13V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta), 89W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ MX	Package / Case: DirectFET™ Isometric MX
IRF6715MTR1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 34A DIRECTFET	In Stock569 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.6mOhm @ 34A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5340pF @ 13V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta), 78W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ MX	Package / Case: DirectFET™ Isometric MX
IRF6716MTR1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 39A DIRECTFET	In Stock460 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 13V	FET Feature: -	Power Dissipation (Max): 3.6W (Ta), 78W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ MX	Package / Case: DirectFET™ Isometric MX
IRF6721STR1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 14A DIRECTFET	In Stock283 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7.3mOhm @ 14A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 25µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.2W (Ta), 42W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ SQ	Package / Case: DirectFET™ Isometric SQ
IRF6722MTR1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13A DIRECTFET	In Stock494 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7.7mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.3W (Ta), 42W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ MP	Package / Case: DirectFET™ Isometric MP
IRF6722STR1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13A DIRECTFET	In Stock626 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7.3mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 2.4V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.2W (Ta), 42W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ ST	Package / Case: DirectFET™ Isometric ST
IRF6724MTR1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 27A DIRECTFET	In Stock183 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V	Vgs(th) (Max) @ Id: 2.35V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 54nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4404pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta), 89W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ MX	Package / Case: DirectFET™ Isometric MX
IRF6725MTR1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 28A DIRECTFET	In Stock570 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V	Vgs(th) (Max) @ Id: 2.35V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 54nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta), 100W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ MX	Package / Case: DirectFET™ Isometric MX
IRF6726MTR1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 32A DIRECTFET	In Stock245 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V	Vgs(th) (Max) @ Id: 2.35V @ 150µA	Gate Charge (Qg) (Max) @ Vgs: 77nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6140pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta), 89W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ MT	Package / Case: DirectFET™ Isometric MT
IRF6727MTR1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 32A DIRECTFET	In Stock275 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V	Vgs(th) (Max) @ Id: 2.35V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 74nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6190pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta), 89W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ MX	Package / Case: DirectFET™ Isometric MX
IRF6775MTR1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 4.9A DIRECTFET	In Stock153 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), 28A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 56mOhm @ 5.6A, 10V	Vgs(th) (Max) @ Id: 5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1411pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta), 89W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ MZ	Package / Case: DirectFET™ Isometric MZ
IRF6785MTR1PBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 3.4A DIRECTFET	In Stock487 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V	Vgs(th) (Max) @ Id: 5V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta), 57W (Tc)	Operating Temperature: -40°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: DIRECTFET™ MZ	Package / Case: DirectFET™ Isometric MZ
IRF7404QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 6.7A 8-SOIC	In Stock661 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V	Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7413QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13A 8-SOIC	In Stock557 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 13A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 11mOhm @ 7.3A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7416QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 10A 8-SOIC	In Stock565 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 10A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7452QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 4.5A 8-SOIC	In Stock485 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7478QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 7A 8-SOIC	In Stock337 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)
IRF7700GTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 8.6A 8-TSSOP	In Stock310 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 15mOhm @ 8.6A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 89nC @ 5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-TSSOP	Package / Case: 8-TSSOP (0.173", 4.40mm Width)
IRF7701GTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 10A 8-TSSOP	In Stock594 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 10A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-TSSOP	Package / Case: 8-TSSOP (0.173", 4.40mm Width)
IRF7702GTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 12V 8A 8-TSSOP	In Stock234 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 81nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-TSSOP	Package / Case: 8-TSSOP (0.173", 4.40mm Width)
IRF7703GTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 6A 8-TSSOP	In Stock256 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 62nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V	FET Feature: -	Power Dissipation (Max): 1.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-TSSOP	Package / Case: 8-TSSOP (0.173", 4.40mm Width)
IRF7805QTRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13A 8-SOIC	In Stock510 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 13A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V	Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SO	Package / Case: 8-SOIC (0.154", 3.90mm Width)