FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 777/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SIE800DF-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A 10-POLARPAK	In Stock439 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7.2mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 10-PolarPAK® (S)	Package / Case: 10-PolarPAK® (S)
SIE806DF-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 60A 10-POLARPAK	In Stock467 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 60A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.7mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 15V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 10-PolarPAK® (L)	Package / Case: 10-PolarPAK® (L)
SIE820DF-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 50A 10-POLARPAK	In Stock540 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 4.5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 10-PolarPAK® (S)	Package / Case: 10-PolarPAK® (S)
SIE822DF-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 50A 10-POLARPAK	In Stock186 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18.3A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 10-PolarPAK® (S)	Package / Case: 10-PolarPAK® (S)
SIE830DF-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A 10-POLARPAK	In Stock307 More on Order	Manufacturer: Vishay Siliconix	Series: WFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V	Vgs (Max): ±12V	Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 10-PolarPAK® (S)	Package / Case: 10-PolarPAK® (S)
SIE832DF-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 50A 10-POLARPAK	In Stock643 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.5mOhm @ 14A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 20V	FET Feature: -	Power Dissipation (Max): 5.2W (Ta), 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 10-PolarPAK® (S)	Package / Case: 10-PolarPAK® (S)
TN0200K-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V SOT23-3	In Stock271 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 350mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3 (TO-236)	Package / Case: TO-236-3, SC-59, SOT-23-3
TN0201K-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 420MA SOT23-3	In Stock609 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 420mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 350mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3 (TO-236)	Package / Case: TO-236-3, SC-59, SOT-23-3
TP0101K-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.58A SOT23-3	In Stock574 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: -	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 650mOhm @ 580mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 50µA	Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 350mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3 (TO-236)	Package / Case: TO-236-3, SC-59, SOT-23-3
TP0202K-T1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 385MA SOT23-3	In Stock378 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 385mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V	FET Feature: -	Power Dissipation (Max): 350mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SOT-23-3 (TO-236)	Package / Case: TO-236-3, SC-59, SOT-23-3
TP0610KL-TR1-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 270MA TO92-3	In Stock298 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 3nC @ 15V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): 800mW (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-226AA	Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
FDI8441	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 80A TO-262AB	In Stock471 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 80A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: I2PAK (TO-262)	Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
FDFS2P753AZ	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 3A 8-SO	In Stock422 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 115mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 15V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 3.1W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
2SK2719(F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 3A TO-3PN	In Stock354 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 3A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V	FET Feature: -	Power Dissipation (Max): 125W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P(N)	Package / Case: TO-3P-3, SC-65-3
2SK2847(F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 8A TO-3PN	In Stock452 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V	FET Feature: -	Power Dissipation (Max): 85W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P(N)IS	Package / Case: TO-3P-3, SC-65-3
2SK2916(F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 14A TO-3PN	In Stock303 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 14A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V	FET Feature: -	Power Dissipation (Max): 80W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P(N)IS	Package / Case: TO-3P-3, SC-65-3
2SK2917(F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 18A TO-3PN	In Stock214 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 18A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 10V	FET Feature: -	Power Dissipation (Max): 90W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P(N)IS	Package / Case: TO-3P-3, SC-65-3
2SK2967(F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 30A TO-3PN	In Stock520 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 30A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 10V	FET Feature: -	Power Dissipation (Max): 150W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P(N)	Package / Case: TO-3P-3, SC-65-3
2SK2993(TE24L,Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 20A TO220SM	In Stock530 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 20A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-220SM	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
2SK2995(F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 30A TO-3PN	In Stock128 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 250V	Current - Continuous Drain (Id) @ 25°C: 30A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 3.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 10V	FET Feature: -	Power Dissipation (Max): 90W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P(N)IS	Package / Case: TO-3P-3, SC-65-3
2SK3068(TE24L,Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 12A TO220SM	In Stock440 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 12A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V	FET Feature: -	Power Dissipation (Max): 100W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-220SM	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
2SK3127(TE24L,Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 45A TO220SM	In Stock417 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 45A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 10V	FET Feature: -	Power Dissipation (Max): 65W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-220SM	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
2SK3132(Q)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 50A TO-3P(L)	In Stock349 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 50A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 95mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 3.4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 10V	FET Feature: -	Power Dissipation (Max): 250W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P(L)	Package / Case: TO-3PL
FDD6N50FTF	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 5.5A DPAK	In Stock248 More on Order	Manufacturer: ON Semiconductor	Series: UniFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.75A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 25V	FET Feature: -	Power Dissipation (Max): 89W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D-Pak	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FDB8453LZ	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 16.1A TO-263AB	In Stock465 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 17.6A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3545pF @ 20V	FET Feature: -	Power Dissipation (Max): 3.1W (Ta), 66W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263AB	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDMS8692	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12A POWER56	In Stock574 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 28A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1265pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 41W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-PQFN (5x6)	Package / Case: 8-PowerTDFN
2SK3565(Q,M)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 5A TO-220SIS	In Stock484 More on Order	Manufacturer: Toshiba Semiconductor and Storage	Series: π-MOSIV	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 5A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V	FET Feature: -	Power Dissipation (Max): 45W (Tc)	Operating Temperature: 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220SIS	Package / Case: TO-220-3 Full Pack
SUM33N20-60P-E3	Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 33A D2PAK	In Stock600 More on Order	Manufacturer: Vishay Siliconix	Series: TrenchFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 33A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V, 15V	Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V	Vgs(th) (Max) @ Id: 4.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 113nC @ 15V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 2735pF @ 25V	FET Feature: -	Power Dissipation (Max): 3.12W (Ta), 156W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (D2Pak)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
HUF75344A3	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 75A TO-3PN	In Stock564 More on Order	Manufacturer: ON Semiconductor	Series: UltraFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 208nC @ 20V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4855pF @ 25V	FET Feature: -	Power Dissipation (Max): 288.5W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
IRF2804S-7PPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 160A D2PAK-7	In Stock250 More on Order	Manufacturer: Infineon Technologies	Series: HEXFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 160A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 1.6mOhm @ 160A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6930pF @ 25V	FET Feature: -	Power Dissipation (Max): 330W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: D2PAK (7-Lead)	Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB