FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 767/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IXFV14N80P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 14A PLUS220	In Stock219 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 14A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5.5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXFV14N80PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 14A PLUS220-S	In Stock532 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 14A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5.5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXFV16N80PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 16A PLUS220-S	In Stock553 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 16A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V	FET Feature: -	Power Dissipation (Max): 460W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXFV20N80PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 20A PLUS220SMD	In Stock410 More on Order	Manufacturer: IXYS	Series: HiPerFET™, PolarHT™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 20A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 520mOhm @ 10A, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4685pF @ 25V	FET Feature: -	Power Dissipation (Max): 500W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXFV52N30PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 52A PLUS220-S	In Stock231 More on Order	Manufacturer: IXYS	Series: PolarHT™ HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 300V	Current - Continuous Drain (Id) @ 25°C: 52A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 66mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 25V	FET Feature: -	Power Dissipation (Max): 400W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXFV74N20P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 74A PLUS220	In Stock170 More on Order	Manufacturer: IXYS	Series: PolarHT™ HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 74A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V	FET Feature: -	Power Dissipation (Max): 480W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXFV74N20PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 74A PLUS220-S	In Stock384 More on Order	Manufacturer: IXYS	Series: PolarHT™ HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 74A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V	FET Feature: -	Power Dissipation (Max): 480W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXFV96N15P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 96A PLUS220	In Stock599 More on Order	Manufacturer: IXYS	Series: PolarHT™ HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 96A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V	FET Feature: -	Power Dissipation (Max): 480W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXFV96N15PS	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 96A PLUS220-S	In Stock178 More on Order	Manufacturer: IXYS	Series: PolarHT™ HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 150V	Current - Continuous Drain (Id) @ 25°C: 96A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V	FET Feature: -	Power Dissipation (Max): 480W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PLUS-220SMD	Package / Case: PLUS-220SMD
IXFV96N20P	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 96A PLUS 220	In Stock573 More on Order	Manufacturer: IXYS	Series: PolarHT™ HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 96A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V	FET Feature: -	Power Dissipation (Max): 600W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS220	Package / Case: TO-220-3, Short Tab
IXFX24N100	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 24A PLUS 247	In Stock623 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 1000V	Current - Continuous Drain (Id) @ 25°C: 24A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 5.5V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 267nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V	FET Feature: -	Power Dissipation (Max): 560W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS247™-3	Package / Case: TO-247-3
IXFX26N60Q	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 26A PLUS 247	In Stock218 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 600V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 250mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 4.5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V	FET Feature: -	Power Dissipation (Max): 360W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS247™-3	Package / Case: TO-247-3
IXFX26N90	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 26A PLUS 247	In Stock144 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 900V	Current - Continuous Drain (Id) @ 25°C: 26A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 300mOhm @ 13A, 10V	Vgs(th) (Max) @ Id: 5V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V	FET Feature: -	Power Dissipation (Max): 560W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS247™-3	Package / Case: TO-247-3
IXFX66N50Q2	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 66A PLUS247	In Stock145 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 66A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V	Vgs(th) (Max) @ Id: 4.5V @ 8mA	Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 9125pF @ 25V	FET Feature: -	Power Dissipation (Max): 735W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: PLUS247™-3	Package / Case: TO-247-3
IXKC13N80C	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 13A ISOPLUS220	In Stock312 More on Order	Manufacturer: IXYS	Series: CoolMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 800V	Current - Continuous Drain (Id) @ 25°C: 13A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 290mOhm @ 9A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V	FET Feature: Super Junction	Power Dissipation (Max): -	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS220™	Package / Case: ISOPLUS220™
IXTA110N055T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 110A TO-263	In Stock330 More on Order	Manufacturer: IXYS	Series: TrenchMV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 110A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V	FET Feature: -	Power Dissipation (Max): 230W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA152N085T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 152A TO-263	In Stock474 More on Order	Manufacturer: IXYS	Series: TrenchMV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 85V	Current - Continuous Drain (Id) @ 25°C: 152A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V	FET Feature: -	Power Dissipation (Max): 360W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA152N085T7	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 152A TO-263-7	In Stock356 More on Order	Manufacturer: IXYS	Series: TrenchMV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 85V	Current - Continuous Drain (Id) @ 25°C: 152A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V	FET Feature: -	Power Dissipation (Max): 360W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263-7 (IXTA..7)	Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
IXTA160N075T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 160A TO-263	In Stock544 More on Order	Manufacturer: IXYS	Series: TrenchMV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 160A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V	FET Feature: -	Power Dissipation (Max): 360W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA160N075T7	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 160A TO-263-7	In Stock564 More on Order	Manufacturer: IXYS	Series: TrenchMV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 160A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V	FET Feature: -	Power Dissipation (Max): 360W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263-7 (IXTA..7)	Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
IXTA160N085T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 160A TO-263	In Stock548 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 85V	Current - Continuous Drain (Id) @ 25°C: 160A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V	FET Feature: -	Power Dissipation (Max): 360W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA180N055T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 180A TO-263	In Stock325 More on Order	Manufacturer: IXYS	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 180A (Tc)	Drive Voltage (Max Rds On, Min Rds On): -	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): -	Input Capacitance (Ciss) (Max) @ Vds: -	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA180N085T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 180A TO-263	In Stock217 More on Order	Manufacturer: IXYS	Series: TrenchMV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 85V	Current - Continuous Drain (Id) @ 25°C: 180A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V	FET Feature: -	Power Dissipation (Max): 430W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA180N085T7	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 180A TO-263-7	In Stock322 More on Order	Manufacturer: IXYS	Series: TrenchMV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 85V	Current - Continuous Drain (Id) @ 25°C: 180A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V	FET Feature: -	Power Dissipation (Max): 430W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263-7 (IXTA..7)	Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
IXTA182N055T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 182A TO-263	In Stock516 More on Order	Manufacturer: IXYS	Series: TrenchMV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 182A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V	FET Feature: -	Power Dissipation (Max): 360W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA182N055T7	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 182A TO-263-7	In Stock254 More on Order	Manufacturer: IXYS	Series: TrenchMV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 182A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 25V	FET Feature: -	Power Dissipation (Max): 360W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263-7 (IXTA..7)	Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
IXTA200N075T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 200A TO-263	In Stock544 More on Order	Manufacturer: IXYS	Series: TrenchMV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 200A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V	FET Feature: -	Power Dissipation (Max): 430W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA200N075T7	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 200A TO-263-7	In Stock418 More on Order	Manufacturer: IXYS	Series: TrenchMV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 75V	Current - Continuous Drain (Id) @ 25°C: 200A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V	FET Feature: -	Power Dissipation (Max): 430W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263-7 (IXTA..7)	Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
IXTA200N085T	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 200A TO-263	In Stock455 More on Order	Manufacturer: IXYS	Series: TrenchMV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 85V	Current - Continuous Drain (Id) @ 25°C: 200A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V	FET Feature: -	Power Dissipation (Max): 480W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263 (IXTA)	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IXTA200N085T7	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 85V 200A TO-263-7	In Stock253 More on Order	Manufacturer: IXYS	Series: TrenchMV™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 85V	Current - Continuous Drain (Id) @ 25°C: 200A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V	FET Feature: -	Power Dissipation (Max): 480W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263-7 (IXTA..7)	Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB