Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 7.6A D2PAK |
In Stock340 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1.04W (Ta), 62.5W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 75A D2PAK |
In Stock213 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 37.5A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5635pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 75A D2PAK |
In Stock436 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 37.5A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5635pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 75A D2PAK |
In Stock307 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 37.5A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5635pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 75A D2PAK |
In Stock622 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 8mOhm @ 37.5A, 5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5635pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta), 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 75A D2PAK |
In Stock662 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 75A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4510pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.4W (Ta), 214W (Tj) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 75A D2PAK |
In Stock575 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 75A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 11mOhm @ 37.5A, 5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4370pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.4W (Ta), 214W (Tj) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 75A D2PAK |
In Stock206 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 75A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 11mOhm @ 37.5A, 5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4370pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.4W (Ta), 214W (Tj) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 75A D2PAK |
In Stock489 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 75A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 11mOhm @ 37.5A, 5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4370pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.4W (Ta), 214W (Tj) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 28V 85A D2PAK |
In Stock426 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 28V |
Current - Continuous Drain (Id) @ 25°C: 85A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 24V |
FET Feature: - |
Power Dissipation (Max): 80W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 28V 85A D2PAK |
In Stock446 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 28V |
Current - Continuous Drain (Id) @ 25°C: 85A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 24V |
FET Feature: - |
Power Dissipation (Max): 80W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 24V 90A D2PAK |
In Stock329 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 24V |
Current - Continuous Drain (Id) @ 25°C: 90A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 85W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 24V 90A D2PAK |
In Stock382 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 24V |
Current - Continuous Drain (Id) @ 25°C: 90A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 85W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 24V 12.5A DPAK |
In Stock223 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 24V |
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta), 110W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 24V 12.5A IPAK |
In Stock354 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 24V |
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta), 110W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 24V 12.5A DPAK |
In Stock410 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 24V |
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V |
FET Feature: - |
Power Dissipation (Max): 1.5W (Ta), 110W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 12A IPAK |
In Stock317 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 165mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 12A DPAK |
In Stock485 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 165mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 18A DPAK |
In Stock312 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 60mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta), 55W (Tj) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 18A IPAK |
In Stock638 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 60mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta), 55W (Tj) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 18A DPAK |
In Stock312 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 60mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta), 55W (Tj) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 18A DPAK |
In Stock412 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 9A, 5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta), 55W (Tj) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 18A IPAK |
In Stock350 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 9A, 5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta), 55W (Tj) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 18A DPAK |
In Stock608 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 9A, 5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.1W (Ta), 55W (Tj) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 20A DPAK |
In Stock618 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V |
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.75W (Ta), 74W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 20A IPAK |
In Stock255 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V |
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.75W (Ta), 74W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 20A DPAK |
In Stock317 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V |
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18.9nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.75W (Ta), 74W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 20A IPAK |
In Stock449 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.88W (Ta), 60W (Tj) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 20A DPAK |
In Stock471 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.88W (Ta), 60W (Tj) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DPAK |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
![]() |
ON Semiconductor |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 20A IPAK |
In Stock676 More on Order |
|
Manufacturer: ON Semiconductor |
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 5V |
Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 5V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V |
Vgs (Max): ±15V |
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.36W (Ta), 60W (Tj) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: I-PAK |
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |