FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single

Records 29,970

Page 688/999

Part Number	Manufacturer	Description	In Stock	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTMSD6N303R2G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 6A 8-SOIC	In Stock469 More on Order	Manufacturer: ON Semiconductor	Series: FETKY™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V	FET Feature: Schottky Diode (Isolated)	Power Dissipation (Max): 2W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)
NTP13N10G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 13A TO220AB	In Stock503 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 13A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V	FET Feature: -	Power Dissipation (Max): 64.7W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
NTP18N06G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 15A TO220AB	In Stock147 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 90mOhm @ 7.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V	FET Feature: -	Power Dissipation (Max): 48.4W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
NTP18N06LG	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 15A TO220AB	In Stock492 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 15A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V	Rds On (Max) @ Id, Vgs: 100mOhm @ 7.5A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V	Vgs (Max): ±10V	Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V	FET Feature: -	Power Dissipation (Max): 48.4W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
NTP27N06G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 27A TO220AB	In Stock383 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 27A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 46mOhm @ 13.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V	FET Feature: -	Power Dissipation (Max): 88.2W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
NTP30N06LG	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 30A TO220AB	In Stock617 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 30A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V	Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V	FET Feature: -	Power Dissipation (Max): 88.2W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
NTP30N20G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 30A TO220AB	In Stock410 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 200V	Current - Continuous Drain (Id) @ 25°C: 30A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 81mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 2335pF @ 25V	FET Feature: -	Power Dissipation (Max): 214W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
NTP4302G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 74A TO220AB	In Stock440 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 74A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9.3mOhm @ 37A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V	FET Feature: -	Power Dissipation (Max): 80W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
NTP45N06G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 45A TO220AB	In Stock180 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 45A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 26mOhm @ 22.5A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.4W (Ta), 125W (Tj)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
NTP45N06LG	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 45A TO220AB	In Stock549 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 45A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V	Rds On (Max) @ Id, Vgs: 28mOhm @ 22.5A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.4W (Ta), 125W (Tj)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
NTP52N10G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 60A TO220AB	In Stock149 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 100V	Current - Continuous Drain (Id) @ 25°C: 60A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 30mOhm @ 26A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V	FET Feature: -	Power Dissipation (Max): 214W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
NTP60N06G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 60A TO220AB	In Stock206 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 60A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V	Vgs(th) (Max) @ Id: 4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.4W (Ta), 150W (Tj)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
NTP60N06LG	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 60A TO220AB	In Stock501 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 60A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 5V	Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V	Vgs (Max): ±15V	Input Capacitance (Ciss) (Max) @ Vds: 3075pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.4W (Ta), 150W (Tj)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
NTP75N03L09G	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 75A TO220AB	In Stock225 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 75A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V	Rds On (Max) @ Id, Vgs: 8mOhm @ 37.5A, 5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 75nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5635pF @ 25V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta), 125W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
NTP85N03RG	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 28V 85A TO220AB	In Stock257 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 28V	Current - Continuous Drain (Id) @ 25°C: 85A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 6.8mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 24V	FET Feature: -	Power Dissipation (Max): 80W (Tc)	Operating Temperature: -	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
NTP75N03RG	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 9.7A TO220AB	In Stock204 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 20V	FET Feature: -	Power Dissipation (Max): 1.25W (Ta), 74.4W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220AB	Package / Case: TO-220-3
IXFR40N50Q2	IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 29A ISOPLUS247	In Stock331 More on Order	Manufacturer: IXYS	Series: HiPerFET™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 29A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V	Vgs(th) (Max) @ Id: 5V @ 4mA	Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V	FET Feature: -	Power Dissipation (Max): 320W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: ISOPLUS247™	Package / Case: ISOPLUS247™
PMV30UN,215	NXP	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 5.7A SOT-23	In Stock556 More on Order	Manufacturer: NXP USA Inc.	Series: TrenchMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V	Rds On (Max) @ Id, Vgs: 36mOhm @ 2A, 4.5V	Vgs(th) (Max) @ Id: 700mV @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 20V	FET Feature: -	Power Dissipation (Max): 1.9W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-236AB (SOT23)	Package / Case: TO-236-3, SC-59, SOT-23-3
BSC022N03SG	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TDSON-8	In Stock460 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 110µA	Gate Charge (Qg) (Max) @ Vgs: 64nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 8290pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta), 104W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TDSON-8-1	Package / Case: 8-PowerTDFN
BSC032N03SG	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A TDSON-8	In Stock637 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 70µA	Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.8W (Ta), 78W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TDSON-8-1	Package / Case: 8-PowerTDFN
IPB100N06S3L-03	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 100A TO263-3-2	In Stock286 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 55V	Current - Continuous Drain (Id) @ 25°C: 100A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 5V, 10V	Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 230µA	Gate Charge (Qg) (Max) @ Vgs: 550nC @ 10V	Vgs (Max): ±16V	Input Capacitance (Ciss) (Max) @ Vds: 26240pF @ 25V	FET Feature: -	Power Dissipation (Max): 300W (Tc)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO263-3-2	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPD5N03LAG	Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 50A TO252-3-11	In Stock550 More on Order	Manufacturer: Infineon Technologies	Series: OptiMOS™	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 50A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V	Vgs(th) (Max) @ Id: 2V @ 35µA	Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V	FET Feature: -	Power Dissipation (Max): -	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: PG-TO252-3	Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
BUZ11_R4941	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 30A TO-220AB	In Stock519 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 50V	Current - Continuous Drain (Id) @ 25°C: 30A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V	Vgs(th) (Max) @ Id: 4V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V	FET Feature: -	Power Dissipation (Max): 75W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
FQA24N50	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 24A TO-3PN	In Stock502 More on Order	Manufacturer: ON Semiconductor	Series: QFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 24A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V	FET Feature: -	Power Dissipation (Max): 290W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-3P	Package / Case: TO-3P-3, SC-65-3
FQP9N50	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 9A TO-220	In Stock300 More on Order	Manufacturer: ON Semiconductor	Series: QFET®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 500V	Current - Continuous Drain (Id) @ 25°C: 9A (Tc)	Drive Voltage (Max Rds On, Min Rds On): 10V	Rds On (Max) @ Id, Vgs: 730mOhm @ 4.5A, 10V	Vgs(th) (Max) @ Id: 5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V	Vgs (Max): ±30V	Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V	FET Feature: -	Power Dissipation (Max): 147W (Tc)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Through Hole	Supplier Device Package: TO-220-3	Package / Case: TO-220-3
FDB7030L	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A D2PAK	In Stock615 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 80A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 15V	FET Feature: -	Power Dissipation (Max): 68W (Tc)	Operating Temperature: -65°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263AB	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDB8030L	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A D2PAK	In Stock369 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 80A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 170nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 15V	FET Feature: -	Power Dissipation (Max): 187W (Tc)	Operating Temperature: -65°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: TO-263AB	Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDC633N	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 5.2A SSOT-6	In Stock325 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V	Rds On (Max) @ Id, Vgs: 42mOhm @ 5.2A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V	Vgs (Max): ±8V	Input Capacitance (Ciss) (Max) @ Vds: 538pF @ 10V	FET Feature: -	Power Dissipation (Max): 1.6W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SuperSOT™-6	Package / Case: SOT-23-6 Thin, TSOT-23-6
FDR4420A	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11A SSOT-8	In Stock379 More on Order	Manufacturer: ON Semiconductor	Series: -	FET Type: N-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 11A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 9mOhm @ 11A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V	Vgs (Max): ±20V	Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 15V	FET Feature: -	Power Dissipation (Max): 1.8W (Ta)	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: SuperSOT™-8	Package / Case: 8-LSOP (0.130", 3.30mm Width)
FDS4435	ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 8.8A 8-SOIC	In Stock408 More on Order	Manufacturer: ON Semiconductor	Series: PowerTrench®	FET Type: P-Channel	Technology: MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)	Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V	Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V	Vgs (Max): ±25V	Input Capacitance (Ciss) (Max) @ Vds: 1604pF @ 15V	FET Feature: -	Power Dissipation (Max): 2.5W (Ta)	Operating Temperature: -55°C ~ 175°C (TJ)	Mounting Type: Surface Mount	Supplier Device Package: 8-SOIC	Package / Case: 8-SOIC (0.154", 3.90mm Width)