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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 650/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 3.2A TO-220AB |
In Stock514 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 135µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 38W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3-1 |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 7.3A TO-262 |
In Stock333 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 350µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 83W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO262-3-1 |
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 560V 16A TO-220AB |
In Stock665 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 560V |
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 675µA |
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 160W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3-1 |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 560V 11.6A TO220FP |
In Stock522 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 560V |
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 33W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-FP |
Package / Case: TO-220-3 Full Pack |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 560V 11.6A TO-220 |
In Stock283 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 560V |
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 125W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3-1 |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 4.5A TO220FP |
In Stock356 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 31W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-FP |
Package / Case: TO-220-3 Full Pack |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 4.5A TO-220AB |
In Stock483 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 50W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3-1 |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 560V 7.6A TO-220AB |
In Stock165 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 560V |
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 350µA |
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 83W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-3-1 |
Package / Case: TO-220-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 560V 7.6A TO220FP |
In Stock613 More on Order |
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Manufacturer: Infineon Technologies |
Series: CoolMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 560V |
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 350µA |
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 32W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO220-FP |
Package / Case: TO-220-3 Full Pack |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 6A 6-TSOP |
In Stock360 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 41mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 40µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 1007pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TSOP-6-6 |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.7A 6-TSOP |
In Stock265 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 654pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TSOP-6-6 |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 5.5A 6-TSOP |
In Stock498 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: 2V @ 40µA |
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TSOP-6-6 |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 14.9A 8-SOIC |
In Stock601 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 5962pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: P-DSO-8 |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 9A 8-SOIC |
In Stock447 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 21mOhm @ 9A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 50.4nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 2265pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.35W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: P-DSO-8 |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 12.6A 8DSO |
In Stock573 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-DSO-8 |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 8.9A 8-SOIC |
In Stock260 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 10V |
Vgs(th) (Max) @ Id: 2V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1754pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.35W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: P-DSO-8 |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 11.1A 8-SOIC |
In Stock271 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.1A, 10V |
Vgs(th) (Max) @ Id: 2V @ 42µA |
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13A 8-SOIC |
In Stock620 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 13A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: 2V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2213pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12.7A 8-SOIC |
In Stock355 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 10mOhm @ 12.7A, 10V |
Vgs(th) (Max) @ Id: 2V @ 55µA |
Gate Charge (Qg) (Max) @ Vgs: 26.2nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 1.9A SOT223 |
In Stock179 More on Order |
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Manufacturer: Infineon Technologies |
Series: SIPMOS® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-SOT223-4 |
Package / Case: TO-261-4, TO-261AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 1.9A SOT223 |
In Stock434 More on Order |
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Manufacturer: Infineon Technologies |
Series: SIPMOS® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V |
Vgs(th) (Max) @ Id: 2V @ 460µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-SOT223-4 |
Package / Case: TO-261-4, TO-261AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 0.68A SOT223 |
In Stock227 More on Order |
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Manufacturer: Infineon Technologies |
Series: SIPMOS® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 680mA, 10V |
Vgs(th) (Max) @ Id: 2V @ 170µA |
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-SOT223-4 |
Package / Case: TO-261-4, TO-261AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 0.43A SOT223 |
In Stock312 More on Order |
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Manufacturer: Infineon Technologies |
Series: SIPMOS® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V |
Vgs(th) (Max) @ Id: 2V @ 370µA |
Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-SOT223-4 |
Package / Case: TO-261-4, TO-261AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 250V 0.19A SOT-89 |
In Stock474 More on Order |
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Manufacturer: Infineon Technologies |
Series: SIPMOS® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V |
Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V |
Vgs(th) (Max) @ Id: 2V @ 130µA |
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-SOT89 |
Package / Case: TO-243AA |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 580MA SOT-323 |
In Stock546 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 550mOhm @ 580mA, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 3.5µA |
Gate Charge (Qg) (Max) @ Vgs: 1.38nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 89.9pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 520mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-SOT323-3 |
Package / Case: SC-70, SOT-323 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 390MA SOT-323 |
In Stock203 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA |
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 250mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-SOT323-3 |
Package / Case: SC-70, SOT-323 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 540MA SOT-23 |
In Stock554 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V |
Vgs(th) (Max) @ Id: 2V @ 2.7µA |
Gate Charge (Qg) (Max) @ Vgs: 2.26nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 360mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 330MA SOT-23 |
In Stock469 More on Order |
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Manufacturer: Infineon Technologies |
Series: SIPMOS® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V |
Vgs(th) (Max) @ Id: 2V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs: 3.57nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 360mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: SOT-23-3 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 1.5A SOT-363 |
In Stock218 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 8µA |
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 228pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 560mW (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-SOT363-6 |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 80A D2PAK |
In Stock394 More on Order |
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Manufacturer: Infineon Technologies |
Series: OptiMOS™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 55A, 10V |
Vgs(th) (Max) @ Id: 2V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 94W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PG-TO263-3-2 |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |